Multimode electron transport through quantum waveguides with spin-orbit interaction modulation: Applications of the scattering matrix formalism

2005 ◽  
Vol 72 (4) ◽  
Author(s):  
Lebo Zhang ◽  
P. Brusheim ◽  
H. Q. Xu
Keyword(s):  
Electron Transport ◽  
Scattering Matrix ◽  
Orbit Interaction ◽  
Matrix Formalism ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Quantum Waveguides

Optical properties of wedge-shaped quantum dots under Rashba spin–orbit interaction

2017 ◽  
Vol 31 (08) ◽  
pp. 1750055 ◽  
Author(s):  
R. Khordad
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Orbit Interaction ◽  
Matrix Formalism ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Rashba Spin ◽  
Density Matrix Formalism ◽  
Index Changes ◽  
Analytical Expressions

In the present paper, the optical properties of a GaAs wedge-shaped quantum dot (QD) under the effect of Rashba spin–orbit interaction (SOI) are theoretically studied. For this purpose, we have used analytical expressions for optical properties obtained by the compact-density matrix formalism. The dependence of the optical absorption coefficients and refractive index changes on the strength of Rashba SOI for different angles and different radii of wedge-shaped QD has been studied. According to the obtained results, it is found that (i) the Rashba SOI does not have considerable effects on the refractive index changes maxima. (ii) The total absorption coefficient is increased and shifted towards higher energies with considering the Rashba SOI. (iii) The influence of Rashba SOI on the optical properties depends on the parameters such as apex angle and radius of the wedge-shaped QD.

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

scholarly journals Dirac nodal lines protected against spin-orbit interaction in IrO2

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
J. N. Nelson ◽  
J. P. Ruf ◽  
Y. Lee ◽  
C. Zeledon ◽  
J. K. Kawasaki ◽  
...  
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Nodal Lines
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