Magnetic energy loss in permalloy thin films and microstructures

2005 ◽  
Vol 72 (1) ◽  
Author(s):  
Corneliu Nistor ◽  
Eshel Faraggi ◽  
J. L. Erskine
Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.


2008 ◽  
Vol 42 (2) ◽  
pp. 125-128
Author(s):  
J. F. Al-Sharab ◽  
J. E. Wittig ◽  
G. Bertero ◽  
T. Yamashita ◽  
J. Bentley ◽  
...  

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 697
Author(s):  
Yu-He Liu ◽  
Xiao-Yan Liu ◽  
Hui Sun ◽  
Bo Dai ◽  
Peng Zhang ◽  
...  

Here, the electrical properties of NiO thin films grown on glass and Al2O3 (0001) substrates have been investigated. It was found that the resistivity of NiO thin films strongly depends on oxygen stoichiometry. Nearly perfect stoichiometry yields extremely high resistivity. In contrast, off-stoichiometric thin films possess much lower resistivity, especially for oxygen-rich composition. A side-by-side comparison of energy loss near the edge structure spectra of Ni L3 edges between our NiO thin films and other theoretical spectra rules out the existence of Ni3+ in NiO thin films, which contradicts the traditional hypothesis. In addition, epitaxial NiO thin films grown on Al2O3 (0001) single crystal substrates exhibit much higher resistivity than those on glass substrates, even if they are deposited simultaneously. This feature indicates the microstructure dependence of electrical properties.


2010 ◽  
Vol 46 (6) ◽  
pp. 2442-2445 ◽  
Author(s):  
Hanqiao Zhang ◽  
Chaojiang Li ◽  
Ralu Divan ◽  
Axel Hoffmann ◽  
Pingshan Wang

1968 ◽  
Vol 4 (3) ◽  
pp. 515-519 ◽  
Author(s):  
T. Fujii ◽  
S. Uchiyama ◽  
M. Masuda ◽  
Y. Sakaki

2016 ◽  
Vol 93 (1) ◽  
Author(s):  
A. Hrabec ◽  
F. J. T. Gonçalves ◽  
C. S. Spencer ◽  
E. Arenholz ◽  
A. T. N'Diaye ◽  
...  

1971 ◽  
Vol 3 (3) ◽  
pp. 719-729 ◽  
Author(s):  
M. Šunjić ◽  
A. A. Lucas
Keyword(s):  

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