Magnetic field effects in biased semiconductor heterostructures with Rashba spin-orbit interaction

2005 ◽  
Vol 71 (19) ◽  
Author(s):  
O. Bleibaum
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Semiconductor Heterostructures ◽  
Spin Orbit ◽  
Magnetic Field Effects ◽  
Spin Orbit Interaction ◽  
Field Effects ◽  
Rashba Spin

Effects of Spin Orbit Interaction on Optical Properties for Quantum Dot and Quantum Wire

2017 ◽  
pp. 237-260
Author(s):  
Manoj Kumar ◽  
Pradip Kumar Jha ◽  
Aranya B. Bhattacherjee
Keyword(s):  
Magnetic Field ◽  
Refractive Index ◽  
Optical Absorption ◽  
Electric Field ◽  
Quantum Wire ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Rashba Spin ◽  
Index Changes

Here, the influence of external magnetic field on the optical absorption and refractive index changes for a parabolically confined quantum dot in the presence of Rashba spin orbit interaction have been investigated. The results are presented as a function of quantum confinement potential, magnetic field, Rashba spin orbit interaction strength and photon energy. Our results indicate the important influence of magnetic field on the peak positions of absorption coefficient and refractive index changes. For Quantum Wire, the energy dispersion relations are studied of the spin split subbands subjected to external transverse electric and magnetic fields in the presence of Rashba spin orbit interaction. For an infinite superlattice wire, it is found that the energy gaps between different subbands are shifted due to Rashba spin orbit interaction and external electric field. Here we have also investigated the influence of external electric field and magnetic field on the optical absorption of a parabolic confinement wire.

GATE-CONTROLLED RASHBA SPIN–ORBIT INTERACTION INTENSITY IN SEMICONDUCTOR HETEROSTRUCTURES

2012 ◽  
Vol 26 (30) ◽  
pp. 1230015 ◽  
Author(s):  
SHIU-MING HUANG
Keyword(s):  
Quantum Well ◽  
Carrier Concentration ◽  
Gate Voltage ◽  
Orbit Interaction ◽  
The Other ◽  
Semiconductor Heterostructures ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Rashba Spin ◽  
Interaction Intensity

In order to realize the spin-polarized field-effect-transistor, a controllable spin–orbit interaction is necessary. Two kinds of spin–orbit interaction, Dresselhaus and Rashba spin–orbit interaction, in semiconductor heterostructures have been widely discussed and investigated in terms of both theories and experiments. Dresselhaus and Rashba spin–orbit interaction mainly comes from the lack of inversion symmetry and effective electric field inside the quantum well, respectively. Many experimental investigations show that external voltages affect the carrier concentration of reservoirs, wavefunction distribution in the quantum well and the conduction band profile of the heterostructures. The details of the mechanisms and the efficiency of different effects on the spin–orbit interaction intensity are discussed through different structures and materials. The results show that an increase in carrier concentration or a decrease in gate voltage enhances the Rashba spin–orbit interaction intensity. On the other hand, the wavefunction penetration is the other important mechanism that affects the Rashba spin–orbit interaction intensity. The carrier concentration asymmetry factor strongly affects the efficiency of the external gate voltage on the Rashba spin–orbit interaction intensity.

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