scholarly journals Spin splitting of X-valley-related donor impurity states in an AlAs barrier

2005 ◽  
Vol 71 (19) ◽  
Author(s):  
E. E. Vdovin ◽  
Yu. N. Khanin ◽  
L. Eaves ◽  
M. Henini ◽  
G. Hill
Keyword(s):  
Spin Splitting ◽  
Donor Impurity ◽  
Impurity States ◽  
Related Donor

Spin splitting of X-valley-related donor impurity states in an AlAs barrier

JETP Letters ◽  
2004 ◽  
Vol 80 (2) ◽  
pp. 120-123
Author(s):  
Yu. N. Khanin ◽  
E. E. Vdovin
Keyword(s):  
Spin Splitting ◽  
Donor Impurity ◽  
Impurity States ◽  
Related Donor

Electronic and shallow donor impurity states in GaAs‐Ga1−xAlxAs quantum‐well wires: Effects of dielectric mismatch

1994 ◽  
Vol 75 (11) ◽  
pp. 7389-7393 ◽  
Author(s):  
Zhen‐Yan Deng ◽  
Ting‐Rong Lai ◽  
Jing‐Kun Guo ◽  
Shi‐Wei Gu
Keyword(s):  
Quantum Well ◽  
Shallow Donor ◽  
Donor Impurity ◽  
Impurity States ◽  
Quantum Well Wires ◽  
Dielectric Mismatch

Influence of Al Composition on Donor Impurity States in Self-Formed GaAs-AlxGa1-xAs Quantum Rings

2013 ◽  
Vol 380-384 ◽  
pp. 4284-4289
Author(s):  
Guang Xin Wang ◽  
Xiu Zhi Duan
Keyword(s):  
Binding Energy ◽  
Electric Field ◽  
Growth Direction ◽  
Uniform Electric Field ◽  
Donor Impurity ◽  
Impurity States ◽  
Quantum Rings ◽  
Mass Approximation ◽  
Donor Binding Energy ◽  
Special Value

Based on the the effective mass approximation and variational approach, the donor impurity states confined in self-formed GaAs/AlxGa1-xAs quantum rings (QRs) are investigated theoretically. A uniform electric field is applied along the growth direction of the QR. The different effective masses in the different regions of the GaAs/AlxGa1-xAs QR are taken into consideration. Numerical results show that the binding energy of a donor impurity increases gradually, reaches a maximum value, and then decreases quickly to the special value as the QR height decreases. Given a fixed QR size, the binding energy increases for the impurity located at the center of the QR when the Al composition increases. In addition, it can also be found that when the applied electric field strength increases, the donor binding energy increases for impurities localized at the negative z axis of the QR; however, the donor binding energy decreases slightly for impurities located at the center and positive z axis of the QR.

Spin Splitting of Single 0D Impurity States in Semiconductor Heterostructure Quantum Wells

1996 ◽  
Vol 76 (8) ◽  
pp. 1328-1331 ◽  
Author(s):  
M. R. Deshpande ◽  
J. W. Sleight ◽  
M. A. Reed ◽  
R. G. Wheeler ◽  
R. J. Matyi
Keyword(s):  
Quantum Wells ◽  
Spin Splitting ◽  
Impurity States ◽  
Semiconductor Heterostructure
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