scholarly journals X-ray spectroscopic study of the electronic structure of the high-dielectric-constant materialCaCu3Ti4O12

2005 ◽  
Vol 71 (19) ◽  
Author(s):  
Cormac McGuinness ◽  
James E. Downes ◽  
Paul Sheridan ◽  
P.-A. Glans ◽  
Kevin E. Smith ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Electronic Structure ◽  
Spectroscopic Study ◽  
High Dielectric Constant ◽  
X Ray ◽  
High Dielectric

scholarly journals High Dielectric Constant Study of TiO2-Polypyrrole Composites with Low Contents of Filler Prepared byIn SituPolymerization

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Khalil Ahmed ◽  
Farah Kanwal ◽  
Shahid M. Ramay ◽  
Asif Mahmood ◽  
Shahid Atiq ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Filler Content ◽  
Aqueous Dispersion ◽  
Gravimetric Analysis ◽  
X Ray ◽  
Crystalline Nature ◽  
High Dielectric ◽  
Thermal Stability Of

TiO2/polypyrrole composites with high dielectric constant have been synthesized byin situpolymerization of pyrrole in an aqueous dispersion of low concentration of TiO2, in the presence of small amount of HCl. Structural, optical, surface morphological, and thermal properties of the composites were investigated by X-ray diffractometer, Fourier transform infrared spectroscopy, field-emission scanning electron microscopy, and thermogravimetric analysis, respectively. The data obtained from diffractometer and thermal gravimetric analysis confirmed the crystalline nature and thermal stability of the prepared composites. The dielectric constant of 5 wt% TiO2increased with filler content up to 4.3 × 103at 1 kHz and then decreased to 1.25 × 103at 10 kHz.

Atomic Structure, Band Offsets and Hydrogen in High K oxide:Silicon interfaces

2002 ◽  
Vol 747 ◽  
Author(s):  
J Robertson ◽  
P W Peacock
Keyword(s):  
Dielectric Constant ◽  
Electronic Structure ◽  
Atomic Structure ◽  
High Dielectric Constant ◽  
Dangling Bond ◽  
Charge Neutrality ◽  
Band Offsets ◽  
High K ◽  
Bulk Charge ◽  
High Dielectric

AbstractThe bonding, electronic structure and valence band offsets are calculated for various atomic models of interfaces between Si and high dielectric constant insulators ZrO2 and SrTiO3. A non-polar face of the oxide does not necessarily give a semiconducting interface, because of the need to fill Si dangling bond states on the Si side. This can be achieved by stoichiometry changes. Band offsets of semiconducting interfaces are generally the same as those found from bulk charge neutrality levels, indicating no dipole layers. Dipole layers are present at some configurations, where the offset is then changed by up to 1 eV. The states of hydrogen in the oxides are also considered.

Dielectric and Ferroelectric Properties of BaTi1-xSnxO3 Multilayered Ceramics

2007 ◽  
Vol 555 ◽  
pp. 249-254 ◽  
Author(s):  
S. Marković ◽  
M. Mitrić ◽  
Č. Jovalekić ◽  
M. Miljković
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Dielectric Constant ◽  
Transition Temperature ◽  
Room Temperature ◽  
High Dielectric Constant ◽  
Ferroelectric Properties ◽  
X Ray ◽  
High Dielectric ◽  
Scanning Electron

Multilayered BaTi1-xSnxO3 (BTS) ceramics with different Ti/Sn ratios were produced by pressing and sintering at 1420 oC for 2 hours. X-ray diffractometry, scanning electron microscopy and energy dispersive spectroscopy were used for structural, microstructural and elemental analysis, respectively. The dielectric and ferroelectric behavior of sintered samples was studied, too. It is found that in ingredient materials, with increasing Sn content, the tetragonality decreases; Curie temperature moves towards room temperature, while the maximum of the dielectric constant increases, and also, they becomes less hysteretic. It is noticed that multilayered BTS ceramics with different Ti/Sn contents have a broad transition temperature and show a relatively high dielectric constant in a wide temperature range. It is shown that dielectric properties of these materials may be modified by a combination of different BTS powders as well as layers number.

Synchrotron X-ray reflectivity study of high dielectric constant alumina thin films prepared by atomic layer deposition

2006 ◽  
Vol 510 (1-2) ◽  
pp. 159-163 ◽  
Author(s):  
Yongtaek Hwang ◽  
Kyuyoung Heo ◽  
Chang Hwan Chang ◽  
Man Kil Joo ◽  
Moonhor Ree
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
High Dielectric Constant ◽  
Atomic Layer ◽  
X Ray ◽  
Layer Deposition ◽  
High Dielectric

Atomic Structure, Band Offsets and Hydrogen in High K oxide:Silicon interfaces

2002 ◽  
Vol 745 ◽  
Author(s):  
J Robertson ◽  
P W Peacock
Keyword(s):  
Dielectric Constant ◽  
Electronic Structure ◽  
Atomic Structure ◽  
High Dielectric Constant ◽  
Dangling Bond ◽  
Charge Neutrality ◽  
Band Offsets ◽  
High K ◽  
Bulk Charge ◽  
High Dielectric

ABSTRACTThe bonding, electronic structure and valence band offsets are calculated for various atomic models of interfaces between Si and high dielectric constant insulators ZrO2 and SrTiO3. A non-polar face of the oxide does not necessarily give a semiconducting interface, because of the need to fill Si dangling bond states on the Si side. This can be achieved by stoichiometry changes. Band offsets of semiconducting interfaces are generally the same as those found from bulk charge neutrality levels, indicating no dipole layers. Dipole layers are present at some configurations, where the offset is then changed by up to 1 eV. The states of hydrogen in the oxides are also considered.

scholarly journals The influence of the partially europium substitution on the AC electrical properties of BiSr2CaCu2O6.5 ceramics

2019 ◽  
Vol 13 (4) ◽  
pp. 323-332 ◽  
Author(s):  
Zeynep Özdemir ◽  
Mehmet Kılıç ◽  
Yaşar Karabul ◽  
Seda Erdönmez ◽  
Orhan İçelli
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
High Dielectric Constant ◽  
Earth Metal ◽  
Solid State Reaction Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Low Dielectric ◽  
Fourier Transformed Infrared Spectroscopy ◽  
High Dielectric

In this work, EuxBi1-xSr2CaCu2O6.5 (where x = 0, 0.3, 0.5) samples were prepared by solid-state reaction method and sintered at 950?C for 24 h. The structural characterizations were done by X-ray diffraction, X-ray fluorescence, scanning electron microscope and Fourier transformed infrared spectroscopy. The thermal stability of the samples was also analysed by thermogravimetric TG and DTA measurements. It was shown that Eu0.5Bi0.5Sr2CaCu2O6.5 sample exhibited high dielectric constant and low dielectric loss relative to BiSr2CaCu2O6.5 material. Thus, the dielectric loss was lowered by heavy rare earth metal substitution on Bi-Sr-Ca-Cu-O ceramics while the dielectric constant still remained high. Temperature-dependent complex electrical modulus spectra obtained between 296 and 433K also revealed the temperature-activated relaxation process in the materials which can be attributed to the Maxwell-Wagner type polarization effect. Ultimately, it was suggested that the Eu0.5Bi0.5Sr2CaCu2O6.5 ceramics may have a promising potential for applications which require high dielectric constant with a low dielectric loss.

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