scholarly journals Nonlinear screening and stopping power in two-dimensional electron gases

2005 ◽  
Vol 71 (12) ◽  
Author(s):  
E. Zaremba ◽  
I. Nagy ◽  
P. M. Echenique
2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
Yahong Yang ◽  
Ya Zhang ◽  
Lin Yi ◽  
Wei Jiang

The perturbation electron density and stopping power caused by the movement of charged particles above two-dimensional quantum electron gases (2DQEG) have been studied in numerous works using the quantum hydrodynamic (QHD) theory. In this paper, the QHD is modified by introducing the two-dimensional electron exchange-correlation potential at high density V x c 2 DH and the pump wave modulations. Based on the modified QHD, the perturbation electron density and stopping power are calculated for pump waves with various parameters. The results show that the stopping power values are more accurate after considering V x c 2 DH . Under the modulation of pump waves with the wavelength from 0.1 nm to 0.1 cm , the perturbation electron density of 2DQEG and the stopping power of charged particles show periodic changes. Under the modulation of pump waves with λ = 1.76 × 10 − 4 cm and Φ 0 = 2 × 10 10 e / λ f , the average stopping power with respect to the time phase θ becomes negative, which means that the charged particles will gain energy and can be accelerated. This is a new phenomenon in the fields of 2DQEG and of great significance in surface physics and surface modification in nanoelectronic devices with beam matter interactions.


2021 ◽  
Vol 555 ◽  
pp. 149516
Author(s):  
Jacek J. Kolodziej ◽  
Dawid Wutke ◽  
Jakub Lis ◽  
Natalia Olszowska

1996 ◽  
Vol 40 (1-8) ◽  
pp. 413-415 ◽  
Author(s):  
N Turner ◽  
J.T Nicholls ◽  
E.H Linfield ◽  
K.M Brown ◽  
M Pepper ◽  
...  

2021 ◽  
Vol 5 (6) ◽  
Author(s):  
Ting-Ting Wang ◽  
Sining Dong ◽  
Zhi-Li Xiao ◽  
Chong Li ◽  
Wen-Cheng Yue ◽  
...  

2021 ◽  
Vol 104 (4) ◽  
Author(s):  
B. Horn-Cosfeld ◽  
J. Schluck ◽  
J. Lammert ◽  
M. Cerchez ◽  
T. Heinzel ◽  
...  

1999 ◽  
Vol 595 ◽  
Author(s):  
B. Shen ◽  
T. Someya ◽  
O. Moriwaki ◽  
Y. Arakawa

AbstractPhotoluminescence (PL) of modulation-doped Al0.22Ga0.78N/GaN heterostructures was investigated. The PL peak related to recombination between the two-dimensional electron gases (2DEG) and photoexcited holes is located at 3.448 eV at 40 K, which is 45 meV below the free excitons (FE) emission in GaN. The peak can be observed at temperatures as high as 80 K. The intensity of the 2DEG PL peak is enhanced significantly by incorporating a thin Al0.12Ga0.88N layer into the GaN layer near the heterointerface to suppress the diffusion of photoexcited holes. The energy separation of the 2DEG peak and the GaN FE emission decreases with increasing temperature. Meanwhile, the 2DEG peak energy increases with increasing excitation intensity. These results are attributed to the screening effect of electrons on the bending of the conduction band at the heterointerface, which becomes stronger when temperature or excitation intensity is increased.


2003 ◽  
Vol 33 (5-6) ◽  
pp. 347-356 ◽  
Author(s):  
Axel Lorke ◽  
Stefan Böhm ◽  
Werner Wegscheider

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