Optical detection of electron paramagnetic resonance in room-temperature electron-irradiated ZnO

2005 ◽  
Vol 71 (12) ◽  
Author(s):  
L. S. Vlasenko ◽  
G. D. Watkins
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Room Temperature ◽  
Optical Detection ◽  
Paramagnetic Resonance ◽  
Temperature Electron ◽  
Electron Paramagnetic

Temperature Dependent Line-Shape of the Silicon Dangling Bond EPR-Resonance in Polycrystalline Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
N. H. Nickel ◽  
E. A. Schiff
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Polycrystalline Silicon ◽  
Room Temperature ◽  
Dangling Bond ◽  
Temperature Dependent ◽  
Paramagnetic Resonance ◽  
Temperature Electron ◽  
Motional Narrowing ◽  
G Value ◽  
Electron Paramagnetic

AbstractThe temperature dependence of the silicon dangling-bond resonance in polycrystalline (poly-Si) and amorphous silicon (a-Si:H) was measured. At room temperature, electron paramagnetic resonance (EPR) measurements reveal an isotropie g-value of 2.0055 and a line width of 6.5 and 6.1 G for Si dangling-bonds in a-Si:H and poly-Si, respectively. In both materials spin density and g-value are independent of temperature. While in a-Si:H the width of the resonance did not change with temperature, poly-Si exhibits a remarkable T dependence of ΔHpp. In unpassivated poly-Si a pronounced decrease of ΔHpp is observed for temperatures above 300 K. At 384 K ΔHpp reaches a minimum of 5.1 G, then increases to 6.1 G at 460 K, and eventually decreases to 4.6 G at 530 K. In hydrogenated poly-Si ΔHpp decreases monotonically above 425 K. The decrease of ΔHpp is attributed to electron hopping causing motional narrowing. An average hopping distance of 15 and 17.5 Å was estimated for unhydrogenated and H passivated poly-Si, respectively.

Room Temperature Electron Paramagnetic Resonance (EPR) Signal Storage

1969 ◽  
Author(s):  
D.A. Bozanic ◽  
D.C. Buck ◽  
F.H. Harris ◽  
R.E. Huber ◽  
D. Mergerian ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Room Temperature ◽  
Paramagnetic Resonance ◽  
Temperature Electron ◽  
Epr Signal ◽  
Electron Paramagnetic

Paramagnetic Defects in Benitoite

1991 ◽  
Vol 46 (7) ◽  
pp. 579-582 ◽  
Author(s):  
A. B. Vassilikou-Dova ◽  
K. Eftaxias
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Hyperfine Interaction ◽  
Relative Intensity ◽  
Room Temperature ◽  
Paramagnetic Resonance ◽  
Electron Paramagnetic ◽  
Magnetic Defects

Abstract In clear, blue, transparent bipyramidal crystals of the rare mineral benitoite, BaTiSi3O9, para­ magnetic defects have been investigated by electron paramagnetic resonance at room temperature and 9.43 GHz. They are attributed to Sn3+ and Fe3+ . A pair of satellites recorded for a wide angular rage around B0 || c (~40°) and a relative intensity of ~ 13% to the central signal is most likely due to hyperfine interaction with 117Sn and 119Sn isotopes. Attempts to bleach the colour of the crystal were unsuccessful.

Transient electron paramagnetic resonance of the triplet state of P700 in photosystem I: Evidence for triplet delocalization at room temperature

Biochemistry ◽  
1993 ◽  
Vol 32 (18) ◽  
pp. 4842-4847 ◽  
Author(s):  
Ina Sieckmann ◽  
Klaus Brettel ◽  
Christian Bock ◽  
Arthur van der Est ◽  
Dietmar Stehlik
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Triplet State ◽  
Photosystem I ◽  
Room Temperature ◽  
Paramagnetic Resonance ◽  
Electron Paramagnetic
Sign in / Sign up

Export Citation Format

Share Document