Effects of carrier concentration on the dielectric function of ZnO:Ga andIn2O3:Snstudied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption

2005 ◽  
Vol 71 (7) ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Michio Kondo
Keyword(s):  
Carrier Concentration ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Free Carrier ◽  
Band Edge ◽  
Edge Absorption

scholarly journals Spectroscopic Ellipsometry Characterization of As-Deposited and Annealed Non-Stoichiometric Indium Zinc Tin Oxide Thin Film

Materials ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 578
Author(s):  
Petr Janicek ◽  
Maryane Putri ◽  
Ki Hwan Kim ◽  
Hye Ji Lee ◽  
Marek Bouska ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Carrier Concentration ◽  
Tin Oxide ◽  
Spectroscopic Ellipsometry ◽  
Free Carrier ◽  
Optical Bandgap ◽  
Free Carrier Concentration ◽  
Glass Slides ◽  
Specific Electrical Resistivity ◽  
Zinc Tin Oxide

A spectroscopic ellipsometry study on as-deposited and annealed non-stoichiometric indium zinc tin oxide thin films of four different compositions prepared by RF magnetron sputtering was conducted. Multi-sample analysis with two sets of samples sputtered onto glass slides and silicon wafers, together with the analysis of the samples onto each substrate separately, was utilized for as-deposited samples. Annealed samples onto the glass slides were also analyzed. Spectroscopic ellipsometry in a wide spectral range (0.2–6 eV) was used to determine optical constants (refractive index n and extinction coefficient k) of these films. Parameterized semiconductor oscillator function, together with Drude oscillator, was used as a model dielectric function. Geometrical parameters (layer thickness and surface roughness) and physical parameters (direct optical bandgap, free carrier concentration, mobility, and specific electrical resistivity) were determined from spectroscopic ellipsometry data modeling. Specific electrical resistivity determined from the Drude oscillator corresponds well with the results from electrical measurements. Change in the optical bandgap, visible especially for annealed samples, corresponds with the change of free carrier concentration (Moss–Burstein effect). Scanning electron microscope did not reveal any noticeable annealing-induced change in surface morphology.

Excitonic and free-carrier quantum beats created by femtosecond excitation at the band edge of GaAs

1998 ◽  
Vol 58 (16) ◽  
pp. 10470-10474 ◽  
Author(s):  
Markus Joschko ◽  
Michael Hasselbeck ◽  
Michael Woerner ◽  
Thomas Elsaesser ◽  
R. Hey ◽  
...  
Keyword(s):  
Free Carrier ◽  
Band Edge ◽  
Quantum Beats

The Effects of Composition on the Spectral Loss Characteristics of SiGe Planar Waveguide Structures

1992 ◽  
Vol 281 ◽  
Author(s):  
Yang Zuoya ◽  
B. L. Weiss ◽  
G. Shao ◽  
F. Namavar
Keyword(s):  
Optical Properties ◽  
Planar Waveguide ◽  
Waveguide Structure ◽  
Propagation Loss ◽  
Band Edge ◽  
Optical Confinement ◽  
Structural And Optical Properties ◽  
Edge Absorption

ABSTRACTThe effect of the Si:Ge ratio in SiGe/Si heterostructures on the structural and optical properties of SiGe/Si planar waveguide are reported here for Ge concentrations from 1 to 33.6%. The high propagation loss at 1.15 pm is due to band edge absorption, which increases as the Ge concentration increases, while the loss at longer wavelengths (1.523 pm) increases with decreasing Si concentration, due to the reduced optical confinement of the waveguide structure.

Effect of free-carrier concentration on the phase transition and vibrational properties of VO2

2011 ◽  
Vol 99 (7) ◽  
pp. 071902 ◽  
Author(s):  
M. Nazari ◽  
Changhong Chen ◽  
A. A. Bernussi ◽  
Z. Y. Fan ◽  
M. Holtz
Keyword(s):  
Phase Transition ◽  
Carrier Concentration ◽  
Free Carrier ◽  
Free Carrier Concentration ◽  
Vibrational Properties
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