scholarly journals Interplay between magnetic anisotropy and interlayer coupling in nanosecond magnetization reversal of spin-valve trilayers

2005 ◽  
Vol 71 (6) ◽  
Author(s):  
J. Vogel ◽  
W. Kuch ◽  
J. Camarero ◽  
K. Fukumoto ◽  
Y. Pennec ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
Spin Valve ◽  
Interlayer Coupling

Effect of local variations in interlayer coupling on magnetization reversal in spin-valve multilayers

2004 ◽  
Vol 272-276 ◽  
pp. 1274-1275 ◽  
Author(s):  
N.D. Telling ◽  
G.A. Jones ◽  
M.T. Georgieva ◽  
P.J. Grundy
Keyword(s):  
Magnetization Reversal ◽  
Spin Valve ◽  
Interlayer Coupling

INTERLAYER COUPLING AND MAGNETIC ANISOTROPY AS KEY FACTORS FOR CREATION OF HYSTERESIS-LESS SPIN VALVES

SPIN ◽  
2014 ◽  
Vol 04 (01) ◽  
pp. 1440001 ◽  
Author(s):  
V. V. USTINOV ◽  
M. A. MILYAEV ◽  
L. I. NAUMOVA
Keyword(s):  
Magnetic Field ◽  
Magnetic Anisotropy ◽  
Applied Magnetic Field ◽  
Easy Axis ◽  
Spin Valve ◽  
Interlayer Coupling ◽  
Spin Valves ◽  
Free Layer ◽  
Key Factors ◽  
Low Field

The dependence of the free layer coercivity on the applied magnetic field (MF) deviation from the main anisotropy directions (free layer easy axis (EA) and pinning direction (PD)) and on 〈111〉 texture strength have been studied on [ Ta , ( Ni 80 Fe 20)60 Cr 40]/ Ni 80 Fe 20/ Co 90 Fe 10/ Cu / Co 90 Fe 10/ Mn 75 Ir 25/ Ta spin valves. The effect of interlayer coupling, magnetic anisotropy and texture on the spin valve coercivity is analyzed. Technological steps aimed at the low field coercivity reduction down to few tenths Oersted have been received.

Magnetization dynamics of irradiation-fabricated perpendicularly magnetized dots inside a softer magnetic matrix

2003 ◽  
Vol 777 ◽  
Author(s):  
T. Devolder ◽  
M. Belmeguenai ◽  
C. Chappert ◽  
H. Bernas ◽  
Y. Suzuki
Keyword(s):  
Domain Wall ◽  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
Ion Irradiation ◽  
Magnetic Nanostructures ◽  
Magnetic Storage ◽  
Exchange Field ◽  
Static Magnetization ◽  
Specific Domain ◽  
Helium Ion

AbstractGlobal Helium ion irradiation can tune the magnetic properties of thin films, notably their magneto-crystalline anisotropy. Helium ion irradiation through nanofabricated masks can been used to produce sub-micron planar magnetic nanostructures of various types. Among these, perpendicularly magnetized dots in a matrix of weaker magnetic anisotropy are of special interest because their quasi-static magnetization reversal is nucleation-free and proceeds by a very specific domain wall injection from the magnetically “soft” matrix, which acts as a domain wall reservoir for the “hard” dot. This guarantees a remarkably weak coercivity dispersion. This new type of irradiation-fabricated magnetic device can also be designed to achieve high magnetic switching speeds, typically below 100 ps at a moderate applied field cost. The speed is obtained through the use of a very high effective magnetic field, and high resulting precession frequencies. During magnetization reversal, the effective field incorporates a significant exchange field, storing energy in the form of a domain wall surrounding a high magnetic anisotropy nanostructure's region of interest. The exchange field accelerates the reversal and lowers the cost in reversal field. Promising applications to magnetic storage are anticipated.

Experimental study of magnetization reversal processes in nonsymmetric spin valve

1997 ◽  
Vol 81 (8) ◽  
pp. 5215-5217 ◽  
Author(s):  
V. S. Gornakov ◽  
V. I. Nikitenko ◽  
L. H. Bennett ◽  
H. J. Brown ◽  
M. J. Donahue ◽  
...  
Keyword(s):  
Experimental Study ◽  
Magnetization Reversal ◽  
Spin Valve

Structure and magnetization reversal mechanism in L10 FePt films with perpendicular magnetic anisotropy

2012 ◽  
Vol 520 (17) ◽  
pp. 5746-5751 ◽  
Author(s):  
S.J. Zhang ◽  
Jian-Guo Zheng ◽  
Z. Shi ◽  
S.M. Zhou ◽  
L. Sun ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
Perpendicular Magnetic Anisotropy ◽  
Reversal Mechanism

Magnetic Anisotropy in Electrodeposited CO Films and spin-valves on Gaas Substrates

1999 ◽  
Vol 562 ◽  
Author(s):  
K. Attenborough ◽  
M. Cerisier ◽  
H. Boeve ◽  
J. De Boeck ◽  
G. Borghs ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Buffer Layer ◽  
Structural Properties ◽  
Easy Axis ◽  
Spin Valve ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cu Films ◽  
Gaas Substrates ◽  
Unique Spin

ABSTRACTWe have studied the magnetic and structural properties of thin electrodeposited Co and Cu layers grown directly onto (100) n-GaAs and have investigated the influence of a buffer layer. A dominant fourfold anisotropy with a uniaxial contribution is observed in 10 nm Co electrodeposited films on GaAs. An easy axis is observed in the [001] GaAs direction with two hard axes of differing coercivities parallel to the [011] and [011] directions. For thicker films the easy axes in the [001] direction becomes less pronounced and the fourfold anisotropy becomes less dominant. Co films of similar thicknesses deposited onto an electrodeposited Cu buffer layer were nearly isotropic. From X-ray diffraction 21 nm Co layers on GaAs were found to be hcp with the c-axis tending to be in the plane of the film. The anisotropy is ascribed to the Co/GaAs interface and is held responsible for the unique spin-valve properties seen recently in electrodeposited Co/Cu films.

Magnetic anisotropy and magnetization reversal of La0.67Sr0.33MnO3 thin films on SrTiO3(110)

2010 ◽  
Vol 108 (10) ◽  
pp. 103906 ◽  
Author(s):  
Hans Boschker ◽  
Jaap Kautz ◽  
Evert P. Houwman ◽  
Gertjan Koster ◽  
Dave H. A. Blank ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Magnetization Reversal

Asymmetry of Magnetization Reversal of Pinned Layer in NiFe/Cu/NiFe/IrMn Spin-Valve Structure

2014 ◽  
Vol 27 (6) ◽  
pp. 1547-1552 ◽  
Author(s):  
N. G. Chechenin ◽  
P. N. Chernykh ◽  
S. A. Dushenko ◽  
I. O. Dzhun ◽  
A. Y. Goikhman ◽  
...  
Keyword(s):  
Magnetization Reversal ◽  
Spin Valve ◽  
Valve Structure
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