Poisson-Schrödinger andab initiomodeling of doped Si nanocrystals: Reversal of the charge transfer between host and dopant atoms

2005 ◽  
Vol 71 (4) ◽  
Author(s):  
Torbjörn Blomquist ◽  
George Kirczenow
Keyword(s):  
Charge Transfer ◽  
Si Nanocrystals ◽  
Dopant Atoms

scholarly journals Reversal of the Charge Transfer between Host and Dopant Atoms in Semiconductor Nanocrystals

Nano Letters ◽  
2004 ◽  
Vol 4 (11) ◽  
pp. 2251-2254 ◽  
Author(s):  
Torbjörn Blomquist ◽  
George Kirczenow
Keyword(s):  
Charge Transfer ◽  
Semiconductor Nanocrystals ◽  
Dopant Atoms

XPS Investigation of an Increasing C-H Vibration of Pentacene Doped with Indium

2013 ◽  
Vol 802 ◽  
pp. 279-283
Author(s):  
Annop Chanhom ◽  
Pakorn Prajuabwan ◽  
Sunit Rojanasuwan ◽  
Anuchit Jaruvanawat ◽  
Adirek Rangkasikorn ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Photoelectron Spectroscopy ◽  
Spectral Component ◽  
X Ray ◽  
Nickel Phthalocyanine ◽  
Characterization Technique ◽  
Xps Characterization ◽  
Benzene Rings ◽  
Dopant Atoms

We investigate the increase of C-H vibration in benzene rings of pentacene molecule upon doping with indium by the X-ray photoelectron spectroscopy (XPS) characterization technique. The risen of C-H vibration spectral component is employed to demonstrate the charge transfer between In dopant atoms and C atoms in benzene rings of pentacene molecule. This experiment can be used to explain the same mechanism of charge transfer between In dopant atoms and C atoms in In-doped nickel-phthalocyanine(NiPc).

scholarly journals Modeling of lateral charge transfer in Si nanocrystals in SiO2 thin film

2012 ◽  
Vol 111 (7) ◽  
pp. 073707
Author(s):  
Q. Yu ◽  
Y. Liu ◽  
T. P. Chen ◽  
Y. F. Yu ◽  
J. I. Wong ◽  
...  
Keyword(s):  
Thin Film ◽  
Charge Transfer ◽  
Sio2 Thin Film ◽  
Si Nanocrystals

Co-implantation : A simple way to grow doped Si nanocrystals embedded in SiO2

2012 ◽  
Vol 1455 ◽  
Author(s):  
Daniel Mathiot ◽  
Rim Khelifi ◽  
Dominique Muller ◽  
Sébastien Duguay
Keyword(s):  
Spatial Distribution ◽  
Atomic Scale ◽  
Si Nanocrystals ◽  
Dopant Atoms ◽  
Atomic Probe ◽  
Atomic Probe Tomography

ABSTRACTCo-implantation, with overlapping implantation projected ranges, of Si and of the doping species (P, As, or B), followed by a single thermal anneal step, is proved to be a viable route to form doped Si-nc’s embedded in SiO2, with diameters of a few nanometers. Extensive results of the evolution of the Si-nc’s related photoluminescence, as a function of the dopant implanted dose, are presented and discussed. Atomic Probe Tomography (APT) is used to image directly the spatial distribution of the various species at the atomic scale. The 3D APT data demonstrate that n-type dopant atoms (P and As) are efficiently introduced in the "bulk" of the Sinanocrystals, whereas B atoms are preferentially located at their periphery, at the Si/SiO2 interface.

Study of charge transfer in FeTi

1983 ◽  
Vol 41 ◽  
pp. 296-297
Author(s):  
J. Taft∅
Keyword(s):  
Charge Transfer ◽  
Charge Distribution ◽  
Electron Scattering ◽  
Periodic System ◽  
Electron Distribution ◽  
Scattering Amplitude ◽  
Transition Elements ◽  
Hartree Fock ◽  
Cscl Structure ◽  
The Right

It is well known that for reflections corresponding to large interplanar spacings (i.e., sin θ/λ small), the electron scattering amplitude, f, is sensitive to the ionicity and to the charge distribution around the atoms. We have used this in order to obtain information about the charge distribution in FeTi, which is a candidate for storage of hydrogen. Our goal is to study the changes in electron distribution in the presence of hydrogen, and also the ionicity of hydrogen in metals, but so far our study has been limited to pure FeTi. FeTi has the CsCl structure and thus Fe and Ti scatter with a phase difference of π into the 100-ref lections. Because Fe (Z = 26) is higher in the periodic system than Ti (Z = 22), an immediate “guess” would be that Fe has a larger scattering amplitude than Ti. However, relativistic Hartree-Fock calculations show that the opposite is the case for the 100-reflection. An explanation for this may be sought in the stronger localization of the d-electrons of the first row transition elements when moving to the right in the periodic table. The tabulated difference between fTi (100) and ffe (100) is small, however, and based on the values of the scattering amplitude for isolated atoms, the kinematical intensity of the 100-reflection is only 5.10-4 of the intensity of the 200-reflection.

Direct imaging of charge transfer

1996 ◽  
Vol 54 ◽  
pp. 680-681
Author(s):  
Yimei Zhu ◽  
J. Tafto
Keyword(s):  
Charge Transfer ◽  
Electron Diffraction ◽  
Scattering Amplitude ◽  
High Temperature Superconductors ◽  
Charge Carriers ◽  
Image Charge ◽  
Net Charge ◽  
Long Time ◽  
Electron Holes ◽  
First Time

The electron holes confined to the CuO2-plane are the charge carriers in high-temperature superconductors, and thus, the distribution of charge plays a key role in determining their superconducting properties. While it has been known for a long time that in principle, electron diffraction at low angles is very sensitive to charge transfer, we, for the first time, show that under a proper TEM imaging condition, it is possible to directly image charge in crystals with a large unit cell. We apply this new way of studying charge distribution to the technologically important Bi2Sr2Ca1Cu2O8+δ superconductors.Charged particles interact with the electrostatic potential, and thus, for small scattering angles, the incident particle sees a nuclei that is screened by the electron cloud. Hence, the scattering amplitude mainly is determined by the net charge of the ion. Comparing with the high Z neutral Bi atom, we note that the scattering amplitude of the hole or an electron is larger at small scattering angles. This is in stark contrast to the displacements which contribute negligibly to the electron diffraction pattern at small angles because of the short g-vectors.

Effects of dopant concentration on the microstructure of tin- doped indium oxide thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 716-717
Author(s):  
I. A. Rauf
Keyword(s):  
Thin Films ◽  
Indium Oxide ◽  
Ionic Radius ◽  
Free Carrier ◽  
Electron Gun ◽  
Periodic Lattice ◽  
Oxide Thin Films ◽  
Transmission Electron ◽  
The Difference ◽  
Dopant Atoms

To understand the electronic conduction mechanism in Sn-doped indium oxide thin films, it is important to study the effect of dopant atoms on the neighbouring indium oxide lattice. Ideally Sn is a substitutional dopant at random indium sites. The difference in valence (Sn4+ replaces In3+) requires that an extra electron is donated to the lattice and thus contributes to the free carrier density. But since Sn is an adjacent member of the same row in the periodic table, the difference in the ionic radius (In3+: 0.218 nm; Sn4+: 0.205 nm) will introduce a strain in the indium oxide lattice. Free carrier electron waves will no longer see a perfect periodic lattice and will be scattered, resulting in the reduction of free carrier mobility, which will lower the electrical conductivity (an undesirable effect in most applications).One of the main objectives of the present investigation is to understand the effects of the strain (produced by difference in the ionic radius) on the microstructure of the indium oxide lattice when the doping level is increased to give high carrier densities. Sn-doped indium oxide thin films were prepared with four different concentrations: 9, 10, 11 and 12 mol. % of SnO2 in the starting material. All the samples were prepared at an oxygen partial pressure of 0.067 Pa and a substrate temperature of 250°C using an Edwards 306 coating unit with an electron gun attachment for heating the crucible. These deposition conditions have been found to give optimum electrical properties in Sn-doped indium oxide films. A JEOL 2000EX transmission electron microscope was used to investigate the specimen microstructure.

Efficient and stable charge transfer channels for photocatalytic water splitting activity of CdS without sacrificial agents

2020 ◽  
Vol 8 (40) ◽  
pp. 20963-20969 ◽  
Author(s):  
Wei Chen ◽  
Guo-Bo Huang ◽  
Hao Song ◽  
Jian Zhang
Keyword(s):  
Charge Transfer ◽  
Water Splitting ◽  
Photocatalytic Water Splitting ◽  
Transfer Channel ◽  
Efficient Charge ◽  
Transfer Channels

An efficient charge transfer channel for improving the photocatalytic water splitting activity and durability of CdS without sacrificial agents.

Dynamic adjustment of emission from both singlets and triplets: the role of excited state conformation relaxation and charge transfer in phenothiazine derivates

2021 ◽  
Author(s):  
Weidong Qiu ◽  
Xinyi Cai ◽  
Mengke Li ◽  
Liangying Wang ◽  
Yanmei He ◽  
...  
Keyword(s):  
Excited State ◽  
Charge Transfer ◽  
Intramolecular Charge Transfer ◽  
Dynamic Adjustment ◽  
Twisted Intramolecular Charge Transfer

Dynamic adjustment of emission behaviours by controlling the extent of twisted intramolecular charge transfer character in excited state.

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