scholarly journals Experimental ratchet effect in superconducting films with periodic arrays of asymmetric potentials

2005 ◽  
Vol 71 (2) ◽  
Author(s):  
J. E. Villegas ◽  
E. M. Gonzalez ◽  
M. P. Gonzalez ◽  
J. V. Anguita ◽  
J. L. Vicent
Keyword(s):  
Superconducting Films ◽  
Ratchet Effect ◽  
Periodic Arrays

Flux avalanches in superconducting films with periodic arrays of holes

2000 ◽  
Vol 341-348 ◽  
pp. 1281-1282 ◽  
Author(s):  
V. Vlasko-Vlasov ◽  
U. Welp ◽  
V. Metlushko ◽  
G.W. Crabtree
Keyword(s):  
Superconducting Films ◽  
Periodic Arrays ◽  
Flux Avalanches

Vortex lattice in effective type-I superconducting films with periodic arrays of submicron holes

2006 ◽  
Vol 437-438 ◽  
pp. 25-28 ◽  
Author(s):  
G.R. Berdiyorov ◽  
M.V. Milošević ◽  
F.M. Peeters
Keyword(s):  
Vortex Lattice ◽  
Superconducting Films ◽  
Type I ◽  
Periodic Arrays

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

High-resolution x-ray analysis of dislocation networks nn tilt boundaries

1988 ◽  
Vol 46 ◽  
pp. 612-613
Author(s):  
J. R. Michael ◽  
C. H. Lin ◽  
S. L. Sass
Keyword(s):  
Grain Boundaries ◽  
Analytical Electron Microscopy ◽  
Solute Segregation ◽  
X Ray ◽  
Periodic Arrays ◽  
Analytical Electron ◽  
Primary Dislocation ◽  
Tilt Boundaries ◽  
Polycrystalline Solids ◽  
Twist Boundaries

The segregation of solute atoms to grain boundaries in polycrystalline solids can be responsible for embrittlement of the grain boundaries. Although Auger electron spectroscopy (AES) and analytical electron microscopy (AEM) have verified the occurrence of solute segregation to grain boundaries, there has been little experimental evidence concerning the distribution of the solute within the plane of the interface. Sickafus and Sass showed that Au segregation causes a change in the primary dislocation structure of small angle [001] twist boundaries in Fe. The bicrystal specimens used in their work, which contain periodic arrays of dislocations to which Au is segregated, provide an excellent opportunity to study the distribution of Au within the boundary by AEM.The thin film Fe-0.8 at% Au bicrystals (composition determined by Rutherford backscattering spectroscopy), ∼60 nm thick, containing [001] twist boundaries were prepared as described previously. The bicrystals were analyzed in a Vacuum Generators HB-501 AEM with a field emission electron source and a Link Analytical windowless x-ray detector.

Quasiperiodic interfaces: HREM observations of grain and phase boundaries

1990 ◽  
Vol 48 (4) ◽  
pp. 332-333
Author(s):  
K. L. Merkle
Keyword(s):  
Atomic Structure ◽  
Direct Determination ◽  
Lattice Parameter ◽  
Atomic Scale ◽  
Misfit Dislocations ◽  
Oxide Systems ◽  
Atomic Structures ◽  
Periodic Arrays ◽  
Parameter Ratio ◽  
Metal Metal

The atomic structures of internal interfaces have recently received considerable attention, not only because of their importance in determining many materials properties, but also because the atomic structure of many interfaces has become accessible to direct atomic-scale observation by modem HREM instruments. In this communication, several interface structures are examined by HREM in terms of their structural periodicities along the interface.It is well known that heterophase boundaries are generally formed by two low-index planes. Often, as is the case in many fcc metal/metal and metal/metal-oxide systems, low energy boundaries form in the cube-on-cube orientation on (111). Since the lattice parameter ratio between the two materials generally is not a rational number, such boundaries are incommensurate. Therefore, even though periodic arrays of misfit dislocations have been observed by TEM techniques for numerous heterophase systems, such interfaces are quasiperiodic on an atomic scale. Interfaces with misfit dislocations are semicoherent, where atomically well-matched regions alternate with regions of misfit. When the misfit is large, misfit localization is often difficult to detect, and direct determination of the atomic structure of the interface from HREM alone, may not be possible.

Electron Microscope study of commensurate-incommensurate phase transition in BaZnGeO4

1990 ◽  
Vol 48 (4) ◽  
pp. 172-173
Author(s):  
Naoki Yamamoto ◽  
Makoto Kikuchi ◽  
Tooru Atake ◽  
Akihiro Hamano ◽  
Yasutoshi Saito
Keyword(s):  
Phase Transition ◽  
Electron Microscope Study ◽  
Room Temperature ◽  
Hexagonal Lattice ◽  
Ferroelectric Materials ◽  
Temperature Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Periodic Arrays ◽  
Modulation Wave Vector

BaZnGeO4 undergoes many phase transitions from I to V phase. The highest temperature phase I has a BaAl2O4 type structure with a hexagonal lattice. Recent X-ray diffraction study showed that the incommensurate (IC) lattice modulation appears along the c axis in the III and IV phases with a period of about 4c, and a commensurate (C) phase with a modulated period of 4c exists between the III and IV phases in the narrow temperature region (—58°C to —47°C on cooling), called the III' phase. The modulations in the IC phases are considered displacive type, but the detailed structures have not been studied. It is also not clear whether the modulation changes into periodic arrays of discommensurations (DC’s) near the III-III' and IV-V phase transition temperature as found in the ferroelectric materials such as Rb2ZnCl4.At room temperature (III phase) satellite reflections were seen around the fundamental reflections in a diffraction pattern (Fig.1) and they aligned along a certain direction deviated from the c* direction, which indicates that the modulation wave vector q tilts from the c* axis. The tilt angle is about 2 degree at room temperature and depends on temperature.

Noise of high-Tc superconducting films and bolometers

1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-293-Pr3-296
Author(s):  
I. A. Khrebtov ◽  
V. N. Leonov ◽  
A. D. Tkachenko ◽  
P. V. Bratukhin ◽  
A. A. Ivanov ◽  
...  
Keyword(s):  
Superconducting Films ◽  
High Tc
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