Temperature-dependent magnetization in a ferromagnetic bilayer consisting of two materials with different Curie temperatures

2004 ◽  
Vol 70 (21) ◽  
Author(s):  
J. Wu ◽  
G. S. Dong ◽  
Xiaofeng Jin
Keyword(s):  
Temperature Dependent ◽  
Curie Temperatures ◽  
Temperature Dependent Magnetization

Ferromagnetic and Paramagnetic Semiconductors Based upon GaN, AlGaN, and GaP

2001 ◽  
Vol 690 ◽  
Author(s):  
Mark E. Overberg ◽  
Gerald T. Thaler ◽  
Rachel M. Frazier ◽  
Brent P. Gila ◽  
Cammy R. Abernathy ◽  
...  
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Hysteretic Behavior ◽  
Ferromagnetic Semiconductors ◽  
Temperature Dependent ◽  
Paramagnetic Behavior ◽  
Gas Source ◽  
P Type ◽  
First Time ◽  
Temperature Dependent Magnetization

ABSTRACTEpitaxial growth of the ferromagnetic semiconductors GaMnP:C and GaMnN has been investigated by Gas Source Molecular Beam Epitaxy (GSMBE). GaMnP:C films grown with 9.4% Mn are found to be p-type with hysteretic behavior to room temperature. GaMnN films grown at 700 °C with 2.8% Mn show hysteresis at 300 K, while temperature-dependent magnetization measurements indicate that the magnetism may persist to much higher temperatures (> 325 K). Samples of AlGaMnN have also been prepared for the first time that show improved surface morphology compared to GaMnN but which show only paramagnetic behavior.

scholarly journals Layering and temperature-dependent magnetization and anisotropy of naturally produced Ni/NiO multilayers

2012 ◽  
Vol 112 (5) ◽  
pp. 053918 ◽  
Author(s):  
S. D. Pappas ◽  
V. Kapaklis ◽  
A. Delimitis ◽  
P. E. Jönsson ◽  
E. Th. Papaioannou ◽  
...  
Keyword(s):  
Temperature Dependent ◽  
Temperature Dependent Magnetization

Temperature-dependent magnetization and susceptibility ofFen∕V7superlattices

2005 ◽  
Vol 71 (10) ◽  
Author(s):  
M. Pärnaste ◽  
M. van Kampen ◽  
R. Brucas ◽  
B. Hjörvarsson
Keyword(s):  
Temperature Dependent ◽  
Temperature Dependent Magnetization

The Characteristics of Ferroelectric Sr0.4Ba0.6Nb2-xVxO6 Dielectrics

2008 ◽  
Vol 368-372 ◽  
pp. 136-139
Author(s):  
Yao Sheng Yang ◽  
Wen Cheng Tzou ◽  
Guan Hung Wu ◽  
Cheng Fu Yang ◽  
Chern Hwa Chen ◽  
...  
Keyword(s):  
Ceramic Material ◽  
Sintering Temperature ◽  
Dielectric Constants ◽  
Temperature Dependent ◽  
Dielectric Characteristics ◽  
Sem Micrographs ◽  
V2o5 Content ◽  
Large Influence ◽  
Curie Temperatures

In this study, it would be interesting to investigate ceramic material based on Sr0.4Ba0.6Nb2O6 composition, V2O5 was used to substitute Nb2O5 to form the compositions of Sr0.4Ba0.6Nb2-xVxO6, where 0 ≤ x ≤ 0.3. The prepared Sr0.4Ba0.6Nb2-xVxO6 ceramics were sintered from 1060oC to 1300oC, and the needed sintering temperatures were dependent on V2O5 content. The SEM micrographs showed that even 1220oC was used as the sintering temperature of Sr0.4Ba0.6Nb2O6 ceramics, the pores were still observed. The crystal intensities of some (h,k,l) planes, for example (3,2,0) and (5,5,0) planes, apparently increased with the increase of V2O5 content and slightly decreased with the increase of sintering temperatures. The temperature-dependent dielectric characteristics were measured from 25oC to 300oC at 1MHz as a function of sintering temperatures and V2O5 content. The studied results would show that the sintering temperatures and V2O5 content also had large influence on the maximum dielectric constants (revealed at Curie temperatures) and the temperature-dielectric curves of Sr0.4Ba0.6Nb2-xVxO6 ceramics.

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