Tensile-strained GaAs quantum wells and quantum dots in aGaAsxSb1−xmatrix

2004 ◽  
Vol 70 (20) ◽  
Author(s):  
A. A. Toropov ◽  
O. G. Lyublinskaya ◽  
B. Ya. Meltser ◽  
V. A. Solov’ev ◽  
A. A. Sitnikova ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wells

Thermoelectric Power in Quantum Confined Bismuth Under Classically Large Magnetic Field

1990 ◽  
Vol 216 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
S. N. Biswas
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Quantum Well ◽  
Film Thickness ◽  
Quantum Wells ◽  
Thermoelectric Power ◽  
Large Magnetic Field ◽  
Quantum Well Wires ◽  
Electron Dispersion ◽  
Theoretical Results

ABSTRACTIn this paper we studied the thermoelectric power under classically large magnetic field (TPM) in quantum wells (QWs), quantum well wires (QWWS) and quantum dots (QDs) of Bi by formulating the respective electron dispersion laws. The TPM increases with increasing film thickness in an oscillatory manner in all the cases. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.

scholarly journals Spontaneous Coherence Effects in Quantum Dots and Quantum Wells Placed in Microcavities

2016 ◽  
Vol 108 ◽  
pp. 02031
Author(s):  
N.E. Kaputkina ◽  
Yu.E. Lozovik ◽  
M.V. Altaisky
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Coherence Effects

Ultrafast Carrier Dynamics, Optical Amplification, and Lasing in Nanocrystal Quantum Dots

MRS Bulletin ◽  
2001 ◽  
Vol 26 (12) ◽  
pp. 998-1004 ◽  
Author(s):  
Victor I. Klimov ◽  
Moungi G. Bawendi
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Electronic States ◽  
Three Dimensions ◽  
Band Edge ◽  
Lasing Threshold ◽  
Wide Energy Range ◽  
Band Edge Emission ◽  
Edge States

Semiconductor materials are widely used in both optically and electrically pumped lasers. The use of semiconductor quantum wells (QWs) as optical-gain media has resulted in important advances in laser technology. QWs have a two-dimensional, step-like density of electronic states that is nonzero at the band edge, enabling a higher concentration of carriers to contribute to the band-edge emission and leading to a reduced lasing threshold, improved temperature stability, and a narrower emission line. A further enhancement in the density of the band-edge states and an associated reduction in the lasing threshold are in principle possible using quantum wires and quantum dots (QDs), in which the confinement is in two and three dimensions, respectively. In very small dots, the spacing of the electronic states is much greater than the available thermal energy (strong confinement), inhibiting thermal depopulation of the lowest electronic states. This effect should result in a lasing threshold that is temperatureinsensitive at an excitation level of only 1 electron-hole (e-h) pair per dot on average. Additionally, QDs in the strongconfinement regime have an emission wavelength that is a pronounced function of size, adding the advantage of continuous spectral tunability over a wide energy range simply by changing the size of the dots.

Exciton diamagnetic shifts in GaAs–Ga1−xAlxAs quantum dots and ultrathin quantum wells

2007 ◽  
Vol 19 (21) ◽  
pp. 216224 ◽  
Author(s):  
Z Barticevic ◽  
M Pacheco ◽  
C A Duque ◽  
L E Oliveira
Keyword(s):  
Quantum Dots ◽  
Quantum Wells

Broad-Band Superluminescent Light Emitting Diodes Incorporating Quantum Dots in Compositionally Modulated Quantum Wells

2006 ◽  
Vol 45 (4A) ◽  
pp. 2542-2545 ◽  
Author(s):  
S. K. Ray ◽  
K. M. Groom ◽  
H. Y. Liu ◽  
M. Hopkinson ◽  
R. A. Hogg
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Broad Band ◽  
Light Emitting

Growth Evolution of (Zn,Cd)Se Quantum Dots Deduced from Spatially Resolved Structural and Optical Characterization

1999 ◽  
Vol 571 ◽  
Author(s):  
K. Leonard ◽  
D. Hommel ◽  
A. Stockmann ◽  
H. Selke ◽  
J. Seufert ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Three Dimensional ◽  
High Energy ◽  
Growth Direction ◽  
Growth Mode ◽  
Gradual Transition ◽  
Mode Transition ◽  
Spatially Resolved ◽  
Composition Fluctuations

ABSTRACTThe growth mode of CdSe layers grown by migration enhanced epitaxy between ZnSe barriers has been investigated. In situ reflection high-energy electron diffraction shows a gradual transition to a three-dimensional growth mode which, however, is not accompanied by a change of the surface lattice constant. High-resolution transmission electron micrographs reveal a strong Cd diffusion, leading to ternary ZnCdSe quantum wells. Furthermore. composition fluctuations perpendicular to the growth direction on a nanometer scale are found already prior to the beginning of the growth mode transition. In the case of heterostructures containing a CdSe layer that has undergone the growth mode transition, micrographs show Cd-rich quantum dots with diameters of around 8 nm and heights of around 1.5 nm within a ternary quantum well. By spatially resolved photoluminescence the emission from single quantum dots could be observed. The polarization dependence of the emission from single dots indicates an asymmetric shape of the dots with certain preferential orientations along the [110] and [110] directions.

InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5–1.9 µm)

1999 ◽  
Vol 33 (9) ◽  
pp. 1007-1009
Author(s):  
Z. N. Sokolova ◽  
D. A. Vinokurov ◽  
I. S. Tarasov ◽  
N. A. Gun’ko ◽  
G. G. Zegrya
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Strained Quantum Wells
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