Quantum size effect induced modification of the chemisorption properties of thin metal films

2004 ◽  
Vol 70 (16) ◽  
Author(s):  
A. G. Danese ◽  
F. G. Curti ◽  
R. A. Bartynski
Keyword(s):  
Size Effect ◽  
Metal Films ◽  
Quantum Size Effect ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Quantum Size

Quantum size effect in thin metal films

1986 ◽  
Vol 34 (8) ◽  
pp. 5904-5906 ◽  
Author(s):  
G. Govindaraj ◽  
V. Devanathan
Keyword(s):  
Size Effect ◽  
Metal Films ◽  
Quantum Size Effect ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Quantum Size

Influence of the quantum size effect for grazing electrons on the electronic conductivity of metal films

JETP Letters ◽  
1997 ◽  
Vol 66 (11) ◽  
pp. 725-731 ◽  
Author(s):  
G. M. Mikhailov ◽  
I. V. Malikov ◽  
A. V. Chernykh
Keyword(s):  
Size Effect ◽  
Electronic Conductivity ◽  
Metal Films ◽  
Quantum Size Effect ◽  
Quantum Size

Quantum size effects in thin metal films

Physica ◽  
1972 ◽  
Vol 59 (3) ◽  
pp. 510-528 ◽  
Author(s):  
A.P. Van Gelder
Keyword(s):  
Size Effects ◽  
Metal Films ◽  
Thin Metal ◽  
Quantum Size Effects ◽  
Thin Metal Films ◽  
Quantum Size

Epitaxial Al and Cu films grown on CaF2/Si(111)

2000 ◽  
Vol 648 ◽  
Author(s):  
Yuriy V. Shusterman ◽  
Nikolai L. Yakovlev ◽  
Katharine Dovidenko ◽  
Leo J. Schowalter
Keyword(s):  
Size Effect ◽  
High Energy ◽  
Metal Films ◽  
Thin Metal ◽  
Room Temperature Resistivity ◽  
Thin Metal Films ◽  
Cu Films ◽  
Transmission Electron ◽  
Materials Research ◽  
Magneto Resistance

AbstractThe ability to grow single-crystalline Al and Cu films is of significance for several areas of materials research, such as the resistivity size effect in thin metal films, electromigration failure of interconnects, and magneto-resistance studies. Here, we explore the microstructure and resistivity of thin Al and Cu films grown on CaF2/Si(111). A three-step technique of CaF2 growth is described that permits deposition under imperfect vacuum conditions and promotes smoothness of subsequent thin metal films. Reflection high-energy electron diffraction shows that epitaxial Al(111) is obtained directly on CaF2, while epitaxial Cu(111) is obtained only by growing on a 1 nm thick Al seed layer pre-deposited on CaF2. Transmission electron microscopy reveals that 75 nm thick Al films have 150 nm wide sub-grains misoriented by less than 1 degree. For 75 nm thick Cu, the grains are only 30 nm wide and are misoriented by as much as 10 degrees. Room temperature resistivity measurements of the 10-300 nm thick Al films agree with the Fuchs-Sondheimer model in which conduction electrons scatter totally diffusely at the film interfaces. For 50-1000 nm thick Cu films, the resistivity size effect is substantially greater than the prediction of this model, which may be explained in terms of grain boundary scattering.

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