Role of spin-orbit interaction in the chemical potential of quantum dots in a magnetic field

2004 ◽  
Vol 70 (12) ◽  
Author(s):  
Agustí Emperador ◽  
E. Lipparini ◽  
F. Pederiva
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Chemical Potential ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction

scholarly journals Flat-band conditions influenced by spin-orbit interaction in the presence of external magnetic field

2021 ◽  
Vol 11 (5) ◽  
pp. 171-179
Author(s):  
Nóra Kucska ◽  
Zsolt Gulácsi
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Orbit Interaction ◽  
Flat Band ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Many Body ◽  
Spin Orbit Interaction ◽  
Coupling Strengths

We deduct conditions for the Hamiltonian coupling strengths necessary to achieve flat bands in polymers (i.e. a pentagon chain) considering many-body spin-orbit coupling and external magnetic field. We consider itinerant electrons on pentagon chains with first neighbour hoppings, on-site electron potentials and spin-flip first neighbour hoppings representing the Rashba type spin-orbit interaction (SOI). The external magnetic field is also present in the system via the Peierls phase factors. The band structure is obtained by solving the secular equation of the diagonalized one particle part of the Hamiltonian in k-space (momentum-space). The flat band conditions make the bands k-independent, providing a highly a degenerate state, which gives broad possibilities for applications. In our work we have shown how the SOI is able to relax the strict, rigid flat band conditions given by the Hamiltonian coupling strengths. The role of the external magnetic field was also investigated.

Spin relaxation in quantum dots: Role of the phonon modulated spin-orbit interaction

2010 ◽  
Author(s):  
A. M. Alcalde ◽  
C. L. Romano ◽  
L. Sanz ◽  
G. E. Marques ◽  
Marília Caldas ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Spin Relaxation ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

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