Electron–transverse acoustic phonon interaction in martensitic alloys

2004 ◽  
Vol 70 (1) ◽  
Author(s):  
J. F. Wan ◽  
X. L. Lei ◽  
S. P. Chen ◽  
T. Y. Hsu
Keyword(s):  
Acoustic Phonon ◽  
Phonon Interaction ◽  
Transverse Acoustic

scholarly journals Ultralow thermal conductivity from transverse acoustic phonon suppression in distorted crystalline α-MgAgSb

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Xiyang Li ◽  
Peng-Fei Liu ◽  
Enyue Zhao ◽  
Zhigang Zhang ◽  
Tatiana Guidi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Acoustic Phonon ◽  
Transverse Acoustic

Direct measurements of the electron–acoustic phonon interaction in GaAs quantum wire structures

1999 ◽  
Vol 263-264 ◽  
pp. 170-174 ◽  
Author(s):  
A.J Kent ◽  
A.J Naylor ◽  
I.A Pentland ◽  
P Hawker ◽  
M Henini
Keyword(s):  
Quantum Wire ◽  
Acoustic Phonon ◽  
Phonon Interaction ◽  
Direct Measurements ◽  
Electron Acoustic

scholarly journals Anomalous transverse acoustic phonon broadening in the relaxor ferroelectricPb(Mg1/3Nb2/3)0.8Ti0.2O3

2002 ◽  
Vol 65 (14) ◽  
Author(s):  
T. Y. Koo ◽  
P. M. Gehring ◽  
G. Shirane ◽  
V. Kiryukhin ◽  
S.-G. Lee ◽  
...  
Keyword(s):  
Acoustic Phonon ◽  
Transverse Acoustic

Disorder-induced Raman scattering of In1−xGaxP in the transverse acoustic phonon region

1981 ◽  
Vol 37 (12) ◽  
pp. 963-966 ◽  
Author(s):  
B.H. Bayramov ◽  
V.V. Toporov ◽  
Sh.B. Ubaydullaev ◽  
L. Hildisch ◽  
E. Jahne
Keyword(s):  
Raman Scattering ◽  
Acoustic Phonon ◽  
Transverse Acoustic

Polariton–acoustic-phonon interaction in a semiconductor microcavity

2000 ◽  
Vol 61 (3) ◽  
pp. 1696-1699 ◽  
Author(s):  
G. Cassabois ◽  
A. L. C. Triques ◽  
F. Bogani ◽  
C. Delalande ◽  
Ph. Roussignol ◽  
...  
Keyword(s):  
Acoustic Phonon ◽  
Phonon Interaction ◽  
Semiconductor Microcavity

DEPENDENCE OF EXCITON FORMATION ON ITS CENTER-OF-MASS MOMENTUM IN QUANTUM WELLS

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3660-3663 ◽  
Author(s):  
I.-K. OH ◽  
JAI SINGH
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Acoustic Phonon ◽  
Center Of Mass ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Deformation Potential ◽  
Phonon Interaction ◽  
Carrier Temperature ◽  
Comprehensive Study

We present a comprehensive study of the process of exciton formation due to exciton-phonon interaction. Using the exciton-phonon interaction arising from deformation potential, piezoelectric, and polar couplings, we have calculated the rate of formation of an exciton as a function of carrier densitiies, temperatures, and center-of-mass momentum ( K ‖) in quantum wells. Our results show that excitons are dominantly formed at non-zero K ‖, which agrees very well with experiments. The formation of an exciton due to emission of longitudinal optical phonon is found to be more efficient at relatively small values of K ‖, and that due to acoustic phonon emission is more efficient at relatively large K ‖ values for carrier temperature Te-h≲50 K.

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