Electron–longitudinal optical phonon interaction between Landau levels in semiconductor heterostructures

2004 ◽  
Vol 69 (11) ◽  
Author(s):  
C. Becker ◽  
A. Vasanelli ◽  
C. Sirtori ◽  
G. Bastard
Keyword(s):  
Optical Phonon ◽  
Longitudinal Optical ◽  
Landau Levels ◽  
Semiconductor Heterostructures ◽  
Longitudinal Optical Phonon ◽  
Phonon Interaction

DEPENDENCE OF EXCITON FORMATION ON ITS CENTER-OF-MASS MOMENTUM IN QUANTUM WELLS

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3660-3663 ◽  
Author(s):  
I.-K. OH ◽  
JAI SINGH
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Acoustic Phonon ◽  
Center Of Mass ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Deformation Potential ◽  
Phonon Interaction ◽  
Carrier Temperature ◽  
Comprehensive Study

We present a comprehensive study of the process of exciton formation due to exciton-phonon interaction. Using the exciton-phonon interaction arising from deformation potential, piezoelectric, and polar couplings, we have calculated the rate of formation of an exciton as a function of carrier densitiies, temperatures, and center-of-mass momentum ( K ‖) in quantum wells. Our results show that excitons are dominantly formed at non-zero K ‖, which agrees very well with experiments. The formation of an exciton due to emission of longitudinal optical phonon is found to be more efficient at relatively small values of K ‖, and that due to acoustic phonon emission is more efficient at relatively large K ‖ values for carrier temperature Te-h≲50 K.

Electron–Interface–Phonon Interaction and Magnetopolaronic Impurity Transitions in Quantum Wells

1997 ◽  
Vol 11 (08) ◽  
pp. 991-1008 ◽  
Author(s):  
R. Chen ◽  
D. L. Lin
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Phonon Frequency ◽  
Transition Energy ◽  
Bulk Sample ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Phonon Modes ◽  
Phonon Interaction ◽  
Double Heterostructure

The polaronic effect on the hydrogenic 1s–2p+ transition energy of a donor impurity located at the quantum well center in a double heterostructure is studied theoretically in detail. The electron–optical–phonon interaction Hamiltonian is derived on the basis of eigenmodes of lattice vibrations supported by the double heterostructure. Both the confined and interface phonon modes are included in the electron–phonon coupling. The transition energy is calculated as a function of the applied magnetic field for GaAs/Al 1-x Ga x As samples of well -widths d=125 Å, 210 Å and 450 Å by the second-order perturbation. Wide transition gaps are predicted around the two-level and three-level resonances for all three cases. It is found that the transition gap narrows with the increasing well-width but remains larger than the LO and TO phonon frequency difference for d=450 Å as is observed. We also perform the same calculation by assuming that the confined electron interacts with three-dimensional and two-dimensional phonon modes. The transition energy spectra from these calculations appear to be similar to those for a bulk sample, the spectrum splits at the resonance with the longitudinal optical phonon frequency only. From comparisons of our results with these calculations as well as with experiments, it is conclusively established that the wide gap of transition energy is solely due to the interface modes.

Exciton–phonon interaction in quasi-two dimensional layered (PEA)2(CsPbBr3)n−1PbBr4 perovskite

Nanoscale ◽  
2019 ◽  
Vol 11 (45) ◽  
pp. 21867-21871 ◽  
Author(s):  
Hao Long ◽  
Xiang Peng ◽  
Jianxun Lu ◽  
Kebin Lin ◽  
Liqiang Xie ◽  
...  
Keyword(s):  
Optical Phonon ◽  
Coupling Strength ◽  
Acoustic Phonon ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Two Dimensional ◽  
Phonon Coupling ◽  
Phonon Interaction ◽  
2D Material ◽  
Exciton Coupling

Exciton–phonon interaction in quasi-2D material was investigated. It was shown that longitudinal optical phonon, rather than acoustic phonon-exciton coupling dominated the enhancement of exciton–phonon coupling strength.

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