Acoustic phonon sidebands in the emission line of single InAs/GaAs quantum dots

2003 ◽  
Vol 68 (23) ◽  
Author(s):  
I. Favero ◽  
G. Cassabois ◽  
R. Ferreira ◽  
D. Darson ◽  
C. Voisin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Emission Line ◽  
Acoustic Phonon

Exciton-Acoustic Phonon Coupling in Single CdTe Quantum Dots

2001 ◽  
Vol 224 (3) ◽  
pp. 621-627 ◽  
Author(s):  
L. Besombes ◽  
L. Marsal ◽  
K. Kheng ◽  
H. Mariette
Keyword(s):  
Quantum Dots ◽  
Acoustic Phonon ◽  
Cdte Quantum Dots ◽  
Phonon Coupling

Cation exchange assisted synthesis of ZnCdSe/ZnSe quantum dots with narrow emission line widths and near-unity photoluminescence quantum yields

2020 ◽  
Vol 56 (45) ◽  
pp. 6130-6133 ◽  
Author(s):  
Xiao Jin ◽  
Kanlin Xie ◽  
Tingting Zhang ◽  
Huada Lian ◽  
Zhenghe Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Emission Line ◽  
Cation Exchange ◽  
Quantum Yields ◽  
Line Widths ◽  
Narrow Emission

ZnCdSe/ZnSe quantum dots reveal a notable FWHM of 17.1 nm with a near-unity PL QY at 631 nm.

Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
S. Sengupta ◽  
S.Y. Shah ◽  
N. Halder ◽  
S. Chakrabarti
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Emission Line ◽  
Size Distribution ◽  
Single Layer ◽  
Quantum Dot Lasers ◽  
Narrow Linewidth ◽  
Inas Quantum Dots ◽  
Monolayer Coverage ◽  
Narrow Emission

AbstractEpitaxially grown self-assembled InAs quantum dots (QDs) have found applications in optoelectronics. Efforts are being made to obtain efficient quantum-dot lasers operating at longer telecommunication wavelengths, specifically 1.3 μm and 1.55 μm. This requires narrow emission linewidth from the quantum dots at these wavelengths. In InAs/GaAs single layer quantum dot (SQD) structure, higher InAs monolayer coverage for the QDs gives rise to larger dots emitting at longer wavelengths but results in inhomogeneous dot-size distribution. The bilayer quantum dot (BQD) can be used as an alternative to SQDs, which can emit at longer wavelengths (1.229 μm at 8 K) with significantly narrow linewidth (∼16.7 meV). Here, we compare the properties of single layer and bilayer quantum dots grown with higher InAs monolayer coverage. In the BQD structure, only the top QD layer is covered with increased (3.2 ML) InAs monolayer coverage. The emission line width of our BQD sample is found to be insensitive towards post growth treatments.

Quantized acoustic phonon modes in quantum wires and quantum dots

1994 ◽  
Vol 76 (8) ◽  
pp. 4670-4675 ◽  
Author(s):  
Michael A. Stroscio ◽  
K. W. Kim ◽  
SeGi Yu ◽  
Arthur Ballato
Keyword(s):  
Quantum Dots ◽  
Acoustic Phonon ◽  
Quantum Wires ◽  
Phonon Modes

THE INFLUENCE OF ENVIRONMENTAL EFFECTS ON THE ACOUSTIC PHONON SPECTRA IN QUANTUM-DOT HETEROSTRUCTURES

2002 ◽  
Vol 12 (04) ◽  
pp. 1147-1158 ◽  
Author(s):  
SALVADOR RUFO ◽  
MITRA DUTTA ◽  
MICHAEL A. STROSCIO
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Environmental Effects ◽  
Phonon Spectrum ◽  
Acoustic Phonon ◽  
Matrix Material ◽  
Free Standing ◽  
Phonon Spectra ◽  
The Matrix ◽  
Selection Of

We present calculations of the acoustic phonon spectra for a variety of quantum dots and consider the cases where the quantum dots are both free-standing and embedded in a selection of different matrix materials — including semiconductors, plastic, and water. These results go beyond previous calculations for free-standing quantum dots and demonstrate that the matrix material can have a large effect on the acoustic phonon spectrum and consequently on a variety of phonon-assisted transitions in quantum-dot heterostructures.

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