Photothermal deflection measurement on heat transport in GaAs epitaxial layers

2003 ◽  
Vol 68 (16) ◽  
Author(s):  
Sajan D George ◽  
P. Radhakrishnan ◽  
V. P. N. Nampoori ◽  
C. P. G. Vallabhan
2002 ◽  
Vol 41 (24) ◽  
pp. 5179 ◽  
Author(s):  
Nibu A. George ◽  
C. P. G. Vallabhan ◽  
V. P. N. Nampoori ◽  
P. Radhakrishnan

1997 ◽  
Vol 68 (9) ◽  
pp. 3544-3552 ◽  
Author(s):  
Kyriacos Kalli ◽  
Andreas Othonos ◽  
Constantinos Christofides

1986 ◽  
Author(s):  
J. C. Loulergue ◽  
A. C. Tam ◽  
Lionel R. Baker ◽  
Andre Masson

2016 ◽  
Vol 12 (4) ◽  
pp. 712-725 ◽  
Author(s):  
Evgeny L. Pankratov ◽  
Elena A. Bulaeva

Purpose The purpose of this paper is to: analyze the changing properties of epitaxial layers, manufactured in the considered reactor, with the changing parameters of the growth taking into account native convection; and development of the most common analytical approach to describe the technological process. Design/methodology/approach In this paper a vertical reactor for gas phase epitaxy is considered that consists of an external casing, a keeper of substrate with a substrate and a spiral around the casing in area of the growth zone to generate induction heating in order to activate the chemical reactions in the decay of reagents and the growth of the epitaxial layer by using the reagents. The authors introduce an analytical approach to analyze nonlinear mass and heat transport with account variation in space and time parameters. Findings The authors find conditions to improve properties of epitaxial layers. Originality/value Growth regimes at atmospheric and low pressure have been compared and analyzed for their influence of the native convection on the growth of the epitaxial layers. Accounting for the calculated results, recommendations have been formulated to improve the properties of the epitaxial layers.


2003 ◽  
Vol 77 (6-7) ◽  
pp. 633-637 ◽  
Author(s):  
S.D. George ◽  
P. Radhakrishnan ◽  
V.P.N. Nampoori ◽  
C.P.G. Vallabhan

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