scholarly journals Role of the interface region on the optoelectronic properties of silicon nanocrystals embedded inSiO2

2003 ◽  
Vol 68 (8) ◽  
Author(s):  
N. Daldosso ◽  
M. Luppi ◽  
S. Ossicini ◽  
E. Degoli ◽  
R. Magri ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Optoelectronic Properties ◽  
Interface Region

Photoluminescence behavior of silicon nanocrystals: Role of surface chemistry and size

2008 ◽  
Author(s):  
Anoop Gupta ◽  
Folarin Erogbogbo ◽  
Mark T. Swihart ◽  
Hartmut Wiggers
Keyword(s):  
Surface Chemistry ◽  
Silicon Nanocrystals ◽  
Photoluminescence Behavior

Tunable optoelectronic properties of radio frequency sputter-deposited Sb2Se3 thin films: Role of growth angle and thickness

Solar Energy ◽  
2019 ◽  
Vol 194 ◽  
pp. 716-723
Author(s):  
Alapan Dutta ◽  
Ranveer Singh ◽  
Sanjeev Kumar Srivastava ◽  
Tapobrata Som
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Optoelectronic Properties ◽  
Growth Angle ◽  
Sputter Deposited

Thermal quenching behavior of Er-doped silicon-rich SiO2 prepared by ion implantation

2004 ◽  
Vol 19 (9) ◽  
pp. 2699-2702 ◽  
Author(s):  
C.S. Zhang ◽  
H.B Xiao ◽  
Y.J. Wang ◽  
Z.J. Chen ◽  
X.L. Cheng ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Annealing Temperature ◽  
Thermal Quenching ◽  
X Ray Diffraction ◽  
X Ray ◽  
Radiative Processes ◽  
Transmission Electron ◽  
Weak Intensity ◽  
Er Doped

Erbium and silicon were dual implanted into thermally grown SiO2 film on Si (110) substrates, followed by thermal treatment at 700–1200 °C for 30 min. The microstructure was studied by transmission electron microscope and x-ray diffraction. When the implanted films were annealed at T > 900 °C, the silicon nanocrystals (nc-Si) enwrapped by amorphous silicon (a-Si) could be observed. The thermal quenching behavior at λ = 1.535 μm and its relation with the annealling temperature were also investigated. With increasing annealing temperature, the portion of a-Si and the thermal quenching both decreased. Efficient luminescence from Er ions and weak intensity thermal quenching were obtained from the sample annealed at 1100 °C. The role of a-Si in non-radiative processes at T > 100 K is discussed.

Role of copper/vanadium on the optoelectronic properties of reactive RF magnetron sputtered NiO thin films

2018 ◽  
Vol 8 (6) ◽  
pp. 1299-1312 ◽  
Author(s):  
Vengatesh Panneerselvam ◽  
Karthik Kumar Chinnakutti ◽  
Shyju Thankaraj Salammal ◽  
Ajith Kumar Soman ◽  
Kuppusami Parasuraman ◽  
...  
Keyword(s):  
Thin Films ◽  
Optoelectronic Properties

p-GaN/n-ZnO Heterojunction Nanowires: Optoelectronic Properties and the Role of Interface Polarity

ACS Nano ◽  
2014 ◽  
Vol 8 (5) ◽  
pp. 4376-4384 ◽  
Author(s):  
Fabian Schuster ◽  
Bernhard Laumer ◽  
Reza R. Zamani ◽  
Cesar Magén ◽  
Joan Ramon Morante ◽  
...  
Keyword(s):  
Optoelectronic Properties

scholarly journals Role of Lead Vacancies for Optoelectronic Properties of Lead-Halide Perovskites

2017 ◽  
Vol 122 (10) ◽  
pp. 5216-5226 ◽  
Author(s):  
Dayton J. Vogel ◽  
Talgat M. Inerbaev ◽  
Dmitri S. Kilin
Keyword(s):  
Optoelectronic Properties ◽  
Halide Perovskites ◽  
Lead Halide
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