Spectroscopy of voltage dependence of oxygen movement inYBa2Cu3O7−δ

2003 ◽  
Vol 67 (18) ◽  
Author(s):  
S. H. Huerth ◽  
H. D. Hallen ◽  
B. Moeckly
Keyword(s):  
Voltage Dependence ◽  
Oxygen Movement

Analysis of the Bias Dependent Spectral Response of a-SiC:H p-i-n Photodiode

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Louro ◽  
A. Fantoni ◽  
Yu. Vygranenko ◽  
M. Fernandes ◽  
M. Vieira
Keyword(s):  
Bias Voltage ◽  
Voltage Dependence ◽  
Spectral Response ◽  
Surface Recombination ◽  
Electrical Field ◽  
Field Reversal ◽  
Current Voltage ◽  
Voltage Dependent ◽  
And Inversion ◽  
Device Operation

AbstractThe bias voltage dependent spectral response (with and without steady state bias light) and the current voltage dependence has been simulated and compared to experimentally obtained values. Results show that in the heterostructures the bias voltage influences differently the field and the diffusion part of the photocurrent. The interchange between primary and secondary photocurrent (i. e. between generator and load device operation) is explained by the interaction of the field and the diffusion components of the photocurrent. A field reversal that depends on the light bias conditions (wavelength and intensity) explains the photocurrent reversal. The field reversal leads to the collapse of the diode regime (primary photocurrent) launches surface recombination at the p-i and i-n interfaces which is responsible for a double-injection regime (secondary photocurrent). Considerations about conduction band offsets, electrical field profiles and inversion layers will be taken into account to explain the optical and voltage bias dependence of the spectral response.

Power Supply Voltage Dependence of Within-Die Delay Variation of Regular Manual Layout and Irregular Place-and-Route Layout

2011 ◽  
Vol E94-C (6) ◽  
pp. 1072-1075
Author(s):  
Tadashi YASUFUKU ◽  
Yasumi NAKAMURA ◽  
Zhe PIAO ◽  
Makoto TAKAMIYA ◽  
Takayasu SAKURAI
Keyword(s):  
Power Supply ◽  
Voltage Dependence ◽  
Supply Voltage ◽  
Power Supply Voltage ◽  
Place And Route ◽  
Delay Variation

scholarly journals Gating of Na channels in the rat cortical collecting tubule: effects of voltage and membrane stretch.

1996 ◽  
Vol 107 (1) ◽  
pp. 35-45 ◽  
Author(s):  
L G Palmer ◽  
G Frindt
Keyword(s):  
Voltage Dependence ◽  
Single Channel ◽  
Apical Membrane ◽  
Na Channels ◽  
Patch Clamp Technique ◽  
Open Time ◽  
Collecting Tubule ◽  
Excised Patches ◽  
The Mean ◽  
Cortical Collecting Tubule

The gating kinetics of apical membrane Na channels in the rat cortical collecting tubule were assessed in cell-attached and inside-out excised patches from split-open tubules using the patch-clamp technique. In patches containing a single channel the open probability (Po) was variable, ranging from 0.05 to 0.9. The average Po was 0.5. However, the individual values were not distributed normally, but were mainly < or = 0.25 or > or = 0.75. Mean open times and mean closed times were correlated directly and inversely, respectively, with Po. In patches where a sufficient number of events could be recorded, two time constants were required to describe the open-time and closed-time distributions. In most patches in which basal Po was < 0.3 the channels could be activated by hyperpolarization of the apical membrane. In five such patches containing a single channel hyperpolarization by 40 mV increased Po by 10-fold, from 0.055 +/- 0.023 to 0.58 +/- 0.07. This change reflected an increase in the mean open time of the channels from 52 +/- 17 to 494 +/- 175 ms and a decrease in the mean closed time from 1,940 +/- 350 to 336 +/- 100 ms. These responses, however, could not be described by a simple voltage dependence of the opening and closing rates. In many cases significant delays in both the activation by hyperpolarization and deactivation by depolarization were observed. These delays ranged from several seconds to several tens of seconds. Similar effects of voltage were seen in cell-attached and excised patches, arguing against a voltage-dependent chemical modification of the channel, such as a phosphorylation. Rather, the channels appeared to switch between gating modes. These switches could be spontaneous but were strongly influenced by changes in membrane voltage. Voltage dependence of channel gating was also observed under whole-cell clamp conditions. To see if mechanical perturbations could also influence channel kinetics or gating mode, negative pressures of 10-60 mm Hg were applied to the patch pipette. In most cases (15 out of 22), this maneuver had no significant effect on channel behavior. In 6 out of 22 patches, however, there was a rapid and reversible increase in Po when the pressure was applied. In one patch, there was a reversible decrease. While no consistent effects of pressure could be documented, membrane deformation could contribute to the variation in Po under some conditions.

scholarly journals Equivalent Circuit Modeling of a Dual-Gate Graphene FET

Electronics ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 63
Author(s):  
Saima Hasan ◽  
Abbas Z. Kouzani ◽  
M A Parvez Mahmud
Keyword(s):  
Equivalent Circuit ◽  
Gate Voltage ◽  
Voltage Dependence ◽  
Drain Current ◽  
Bilayer Graphene ◽  
Circuit Modeling ◽  
Equivalent Circuit Modeling ◽  
Dual Gate ◽  
Source Voltage ◽  
Transit Frequency

This paper presents a simple and comprehensive model of a dual-gate graphene field effect transistor (FET). The quantum capacitance and surface potential dependence on the top-gate-to-source voltage were studied for monolayer and bilayer graphene channel by using equivalent circuit modeling. Additionally, the closed-form analytical equations for the drain current and drain-to-source voltage dependence on the drain current were investigated. The distribution of drain current with voltages in three regions (triode, unipolar saturation, and ambipolar) was plotted. The modeling results exhibited better output characteristics, transfer function, and transconductance behavior for GFET compared to FETs. The transconductance estimation as a function of gate voltage for different drain-to-source voltages depicted a proportional relationship; however, with the increase of gate voltage this value tended to decline. In the case of transit frequency response, a decrease in channel length resulted in an increase in transit frequency. The threshold voltage dependence on back-gate-source voltage for different dielectrics demonstrated an inverse relationship between the two. The analytical expressions and their implementation through graphical representation for a bilayer graphene channel will be extended to a multilayer channel in the future to improve the device performance.

Product NBTI Distribution and Voltage Dependence - impact of relaxation and droops

2010 ◽  
Author(s):  
Amr Haggag ◽  
Ning Liu ◽  
Peter Abramowitz ◽  
Mohamed Moosa ◽  
Gary Anderson ◽  
...  
Keyword(s):  
Voltage Dependence

Anodic Voltage Dependence of Ti-6Al-4V Substrates and Hydroxyapatite Coating

2019 ◽  
Vol 19 (9) ◽  
pp. 5700-5706 ◽  
Author(s):  
Dai-Hua He ◽  
Pu Wang ◽  
Ping Liu ◽  
Xin-Kuan Liu ◽  
Xiao-Hong Chen ◽  
...  
Keyword(s):  
Voltage Dependence ◽  
Hydroxyapatite Coating ◽  
Anodic Voltage
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