Electronic versus geometric contrast in cross-sectional STM images of III-V semiconductor heterostructures

2003 ◽  
Vol 67 (12) ◽  
Author(s):  
S. G. Kim ◽  
S. C. Erwin ◽  
B. Z. Nosho ◽  
L. J. Whitman
Keyword(s):  
Semiconductor Heterostructures ◽  
Cross Sectional ◽  
Stm Images

Interpreting interfacial structure in cross-sectional STM images of III–V semiconductor heterostructures

2000 ◽  
Vol 465 (3) ◽  
pp. 361-371 ◽  
Author(s):  
B.Z. Nosho ◽  
W. Barvosa-Carter ◽  
M.J. Yang ◽  
B.R. Bennett ◽  
L.J. Whitman
Keyword(s):  
Semiconductor Heterostructures ◽  
Interfacial Structure ◽  
Cross Sectional ◽  
Stm Images

Cross-sectional atomic force imaging of semiconductor heterostructures

1996 ◽  
Vol 37 (1-3) ◽  
pp. 83-88 ◽  
Author(s):  
B. Dwir ◽  
F. Reinhardt ◽  
G. Biasiol ◽  
E. Kapon
Keyword(s):  
Semiconductor Heterostructures ◽  
Cross Sectional ◽  
Atomic Force

SURFACE NANOPATTERNING EFFECTS, STRUCTURE AND MAGNETIC PROPERTIES OF EPITAXIAL Ni FILMS

2004 ◽  
Vol 03 (06) ◽  
pp. 737-748
Author(s):  
R. A. LUKASZEW ◽  
Z. ZHANG ◽  
D. PEARSON ◽  
X. PAN ◽  
R. CLARKE ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Molecular Beam ◽  
Uniaxial Anisotropy ◽  
Neutron Reflectivity ◽  
Azimuthal Dependence ◽  
Cross Sectional ◽  
Azimuthal Symmetry ◽  
Interfacial Surface ◽  
Stm Images

We have studied the correlation between film structures and the azimuthal dependence of the magnetization reversal in (001) and (111) Ni films grown on MgO substrates using molecular beam epitaxy (MBE). For as-grown (001) Ni films, the coercive field exhibits four-fold azimuthal symmetry while in-situ annealed films exhibit additional uniaxial anisotropy. In-situ STM images show surface stripe nanopatterning on the annealed films, which is absent in the as-grown ones. Cross sectional TEM seems to indicate the presence of a highly ordered interfacial layer that we postulate may be fcc NiO . Tetragonal distortion of this layer upon annealing may have induced the uniaxial anisotropy observed in the magnetic properties. Polarized neutron reflectivity measurements performed on some of the films are correlated with the interfacial surface structure and the magnetic anisotropy.

Recent Development and Application of the XSTM

1998 ◽  
Vol 05 (03n04) ◽  
pp. 797-802 ◽  
Author(s):  
H. Hirayama ◽  
Y. Einaga ◽  
M. Koike ◽  
K. Takayanagi
Keyword(s):  
Cross Section ◽  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Local Surface ◽  
Cross Sectional ◽  
Sample Bias ◽  
Disordered Phase ◽  
The Cross ◽  
Sectional Surface ◽  
Stm Images

The development of the cross-section scanning tunneling microscope (XSTM) and its application to the study of the cross-section of boron(B)-implanted Si wafers are reported. To obtain a cross-section of wafer samples, we examined the cleavage on the {111} plane in two ways. As a result the cleavage, by pushing the side of the sample wafer, was found to be preferable in obtaining a flat {111} cross-section from both (111) and (001) wafers. Our devices in the mounting angle and the guiding line for the cleavage are also described in detail, Using this XSTM, we observed the {111} cleaved cross-sectional surface of the B-implanted Si(111) wafer, The local surface structure was found to change on the cleaved cross-section from the 7 × 7 to the [Formula: see text] reconstruction through the disordered phase, The change was found to be consistent with the depth profile of the implanted B in the Si water. The arrangement of B and Si atoms in the disordered phase was determined by the site and the sample bias dependence of protrusions in STM images.

Subnanometer electron probes and their capabilities for internal interface characterization

1997 ◽  
Vol 3 (S2) ◽  
pp. 643-644
Author(s):  
H. Lakner
Keyword(s):  
Chemical Composition ◽  
Analytical Techniques ◽  
Basic Research ◽  
Scanning Transmission Electron Microscope ◽  
Semiconductor Heterostructures ◽  
Contrast Imaging ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Z Contrast

Internal interfaces in materials like e.g. semiconductor heterostructures get more and more interest not only under aspects of basic research but as well under aspects of new electronic and optoelectronic devices. The interface properties often govern the device performance. Thus, the evaluation of individual heterointerfaces with respect to chemical composition and crystal structure requires characterisation techniques which offer the necessary high spatial resolution. The fine focused electron probe (< 0.3 nm at 100 keV) in a field-emission STEM (Scanning Transmission Electron Microscope) allows the application of special imaging and analytical techniques to cross-sectional specimens of semiconductor heterostructures. Qualitative information on the chemical composition is provided by atomic number (Z) contrast imaging with atomic resolution. The same fine probe can be used to analyse subnanometer areas by both spectroscopic and diffraction techniques. Quantitative compositional information is provided by electron energy-loss spectroscopy (EELS) which allows the detection of concentrations of specific elements.

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