Size dependence of the electron-hole recombination rates in semiconductor quantum dots

2003 ◽  
Vol 67 (4) ◽  
Author(s):  
S. Corni ◽  
M. Braskén ◽  
M. Lindberg ◽  
J. Olsen ◽  
D. Sundholm
Keyword(s):  
Quantum Dots ◽  
Size Dependence ◽  
Semiconductor Quantum Dots ◽  
Recombination Rates ◽  
Electron Hole ◽  
Hole Recombination

scholarly journals En route to a unified model for photo-electrochemical reactor optimisation. I - Photocurrent and H2 yield predictions

2017 ◽  
Vol 5 (43) ◽  
pp. 22683-22696 ◽  
Author(s):  
Franky E. Bedoya-Lora ◽  
Anna Hankin ◽  
Geoff H. Kelsall
Keyword(s):  
Electrochemical Cell ◽  
Cell Model ◽  
Bubble Formation ◽  
Electrochemical Reactor ◽  
Photon Flux ◽  
Recombination Rates ◽  
Electron Hole ◽  
Gas Desorption ◽  
H2 Yield ◽  
Hole Recombination

A photo-electrochemical cell model was developed accounting for photon flux, electron–hole recombination rates, gas desorption, bubble formation and cross-over losses.

Auger Recombination in Antimony-Based, Strain-Balanced, Narrow-Band-Gap Superlattics

1997 ◽  
Vol 484 ◽  
Author(s):  
J. T. Olesberg ◽  
Thomas F. Boggess ◽  
S. A. Anson ◽  
D.-J. Jan ◽  
M. E. Flatté ◽  
...  
Keyword(s):  
Auger Recombination ◽  
Growth Direction ◽  
Bandgap Energy ◽  
Recombination Rates ◽  
Electron Hole ◽  
Time Resolved ◽  
All Optical ◽  
Semi Empirical ◽  
The Impact ◽  
Hole Recombination

AbstractTime-resolved all-optical techniques are used to measure the density and temperature dependence of electron-hole recombination in an InAs/GaInSb/InAs/AlGaInAsSb strain-balanced superlattice grown by molecular beam expitaxy on GaSb. This 4 μm bandgap structure, which has been designed for suppressed Auger recombination, is a candidate material for the active region of mid-infrared lasers. While carrier lifetime measurements at room temperature show unambiguous evidence of Auger recombination, the extracted Auger recombination rates are considerably lower than those reported for bulk materials of comparable bandgap energy. We find that the Auger rate saturates at carrier densities comparable to those required for degeneracy of the valence band, illustrating the impact of Fermi statistics on the Auger process. The measured results are compared with theoretical Auger rates computed using a band structure obtained from a semi-empirical 8-band K.p model. We find excellent agreement between theoretical and experimental results when Umklapp processes in the growth direction are included in the calculation. Measured recombination rates from 50 to 300 K are combined with calculated threshold carrier densities to determine a material To value for the superlattice.

Fine Structure of Negatively and Positively Charged Excitons in Semiconductor Quantum Dots: Electron-Hole Asymmetry

2007 ◽  
Vol 98 (3) ◽  
Author(s):  
M. Ediger ◽  
G. Bester ◽  
B. D. Gerardot ◽  
A. Badolato ◽  
P. M. Petroff ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Fine Structure ◽  
Semiconductor Quantum Dots ◽  
Electron Hole ◽  
Positively Charged

Accumulation of Deep Traps at Grain Boundaries in Halide Perovskites

2019 ◽  
Author(s):  
Ji-Sang Park ◽  
Joaquín Calbo ◽  
Young-Kwang Jung ◽  
lucy whalley ◽  
Aron Walsh
Keyword(s):  
Grain Boundaries ◽  
Perovskite Solar Cells ◽  
Extended Defects ◽  
Trap States ◽  
Bulk Crystals ◽  
Recombination Rates ◽  
Electron Hole ◽  
Interstitial Defects ◽  
Halide Perovskites ◽  
Hole Recombination

<div> <div> <div> <p>The behaviour of grain boundaries in polycrystalline halide perovskite solar cells remains poorly understood. Whereas theoretical studies indicate that grain boundaries are not active for electron-hole recombination, there have been observations of higher non-radiative recombination rates involving these extended defects. We find that iodine interstitial defects, which have been established as a recombination center in bulk crystals, tend to segregate at planar defects in CsPbI3. First-principles calculations show that enhanced structural relaxation of the defects at grain boundaries results in increased stability (higher concentration) and deeper trap states (faster recombination). We show how the grain boundary can be partly passivated by halide mixing or extrinsic doping, which replaces or suppresses the formation of trap states close to the grain boundaries.<br></p> </div> </div> </div>

scholarly journals Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions

2001 ◽  
Vol 63 (19) ◽  
Author(s):  
Seungwon Lee ◽  
Lars Jönsson ◽  
John W. Wilkins ◽  
Garnett W. Bryant ◽  
Gerhard Klimeck
Keyword(s):  
Quantum Dots ◽  
Tight Binding ◽  
Semiconductor Quantum Dots ◽  
Wave Functions ◽  
Electron Hole
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