scholarly journals Coherent spin-valve phenomena and electrical spin injection in ferromagnetic/semiconductor/ferromagnetic junctions

2002 ◽  
Vol 66 (21) ◽  
Author(s):  
Francisco Mireles ◽  
George Kirczenow
Keyword(s):  
Spin Injection ◽  
Spin Valve ◽  
Ferromagnetic Semiconductor ◽  
Electrical Spin ◽  
Coherent Spin

Electrical spin injection from an n-type ferromagnetic semiconductor into a III–V device heterostructure

2004 ◽  
Vol 3 (11) ◽  
pp. 799-803 ◽  
Author(s):  
George Kioseoglou ◽  
Aubrey T. Hanbicki ◽  
James M. Sullivan ◽  
Olaf M. J. van 't Erve ◽  
Connie H. Li ◽  
...  
Keyword(s):  
Spin Injection ◽  
Ferromagnetic Semiconductor ◽  
Electrical Spin

Electrical spin injection in a ferromagnetic semiconductor heterostructure

Nature ◽  
10.1038/45509 ◽  
1999 ◽  
Vol 402 (6763) ◽  
pp. 790-792 ◽  
Author(s):  
Y. Ohno ◽  
D. K. Young ◽  
B. Beschoten ◽  
F. Matsukura ◽  
H. Ohno ◽  
...  
Keyword(s):  
Spin Injection ◽  
Ferromagnetic Semiconductor ◽  
Semiconductor Heterostructure ◽  
Electrical Spin

DEVICE CONCEPTS IN SEMICONDUCTOR SPINTRONICS

2008 ◽  
Vol 22 (01n02) ◽  
pp. 119-119
Author(s):  
LAURENS W. MOLENKAMP
Keyword(s):  
Magnetic Semiconductors ◽  
Spin Injection ◽  
Spin Valve ◽  
Ferromagnetic Layer ◽  
Ferromagnetic Semiconductor ◽  
Magnetic Polaron ◽  
Spintronic Devices ◽  
Tunneling Diodes ◽  
Semiconductor Spintronics ◽  
Basic Physics

Semiconductor spintronics has now reached a stage where the basic physical mechanisms controlling spin injection and detection are understood. Moreover, some critical technological issues involved in the growth and lithography of the magnetic semiconductors have been solved. This has allowed us to explore the physics of meanwhile quite complex spintronic devices. The lectures will start with an introduction to spin transport in metals and semiconductors. Building upon this, I will discuss various simple devices that demonstrate this basic physics in action. Subsequently, more advanced devices will be covered. For example, I will discuss resonant tunneling diodes (RTDs) fabricated from paramagnetic II-VI semiconductors that can be operated as a voltage controlled spin-switch. A quantum dot version of these RTDs exhibits, unexpectedly, remanent magnetism at zero external field, which we interpret as resulting from tunneling through a single magnetic polaron. In the ferromagnetic semiconductor ( Ga, Mn ) As we have observed a very large spin valve effect due to domain wall pinning at sub-10 nm sized constrictions. Furthermore, we have found a novel magnetoresistance effect in this material, dubbed tunnel anisotropic magnetoresistance (TAMR), which is due to the strongly (magneto-)anisotropic density of states in a ferromagnetic semiconductor. The effect leads to the observation of a spin valve-like behavior in tunnel structures containg a single ferromagnetic layer and also dominates the spin-valve signal obtained from structures containing two ( Ga, Mn ) As layers, where the effect may cause resistance changes of five orders of magnitude. Note from Publisher: This article contains the abstract only.

scholarly journals Electrical spin injection and accumulation at room temperature in an all-metal mesoscopic spin valve

Nature ◽  
2001 ◽  
Vol 410 (6826) ◽  
pp. 345-348 ◽  
Author(s):  
F. J. Jedema ◽  
A. T. Filip ◽  
B. J. van Wees
Keyword(s):  
Room Temperature ◽  
Spin Injection ◽  
Spin Valve ◽  
Electrical Spin

scholarly journals Anisotropic electrical spin injection in ferromagnetic semiconductor heterostructures

2002 ◽  
Vol 80 (9) ◽  
pp. 1598-1600 ◽  
Author(s):  
D. K. Young ◽  
E. Johnston-Halperin ◽  
D. D. Awschalom ◽  
Y. Ohno ◽  
H. Ohno
Keyword(s):  
Spin Injection ◽  
Ferromagnetic Semiconductor ◽  
Semiconductor Heterostructures ◽  
Electrical Spin

scholarly journals Triggering phase-coherent spin packets by pulsed electrical spin injection across an Fe/GaAs Schottky barrier

2021 ◽  
Vol 104 (19) ◽  
Author(s):  
L. R. Schreiber ◽  
C. Schwark ◽  
G. Güntherodt ◽  
M. Lepsa ◽  
C. Adelmann ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Spin Injection ◽  
Electrical Spin ◽  
Coherent Spin

Incoherent spin current

2017 ◽  
Author(s):  
K. Ando ◽  
E. Saitoh
Keyword(s):  
Diffusion Equation ◽  
Spin Density ◽  
Spin Diffusion ◽  
Spin Injection ◽  
Spin Current ◽  
Ferromagnetic Semiconductor ◽  
Electrochemical Potential ◽  
Semiconductor Interface ◽  
Interface Resistance ◽  
Inhomogeneous Spin

This chapter introduces the concept of incoherent spin current. A diffusive spin current can be driven by spatial inhomogeneous spin density. Such spin flow is formulated using the spin diffusion equation with spin-dependent electrochemical potential. The chapter also proposes a solution to the problem known as the conductivity mismatch problem of spin injection into a semiconductor. A way to overcome the problem is by using a ferromagnetic semiconductor as a spin source; another is to insert a spin-dependent interface resistance at a metal–semiconductor interface.

Sign in / Sign up

Export Citation Format

Share Document