Electron-hole capture suppression and ultraviolet emission in conjugated polymers under high electric fields

2002 ◽  
Vol 65 (23) ◽  
Author(s):  
En-Shi Chen ◽  
Sheng-Hsuan Yeh ◽  
Hsin-Fei Meng
Keyword(s):  
Conjugated Polymers ◽  
Electric Fields ◽  
Electron Hole ◽  
Ultraviolet Emission ◽  
Hole Capture ◽  
High Electric Fields

Properties of Electron Emitting Diode Fabricated with Single-Crystalline Diamond

1999 ◽  
Vol 558 ◽  
Author(s):  
Toshimichi Ito ◽  
Masaki Nishimura
Keyword(s):  
Electric Fields ◽  
High Efficiency ◽  
High Resistivity ◽  
Electron Hole ◽  
Single Crystalline ◽  
Diamond Surfaces ◽  
Diamond Layer ◽  
Electron Emissions ◽  
High Electric Fields ◽  
P Type

ABSTRACTHighly efficient electron emitting diodes have been fabricated using single-crystalline diamond films epitaxially grown on high-pressure synthesized (100) diamond. These diodes have an internal electrode of a graphitized layer buried below an overgrown diamond layer with a very high resistivity, the structure of which is formed by a combination of heavy ionimplantation and overgrowth techniques. The efficiency of electron emissions from sufficiently hydrogenated p-type diamond surfaces reached 100% in the best case. It is found that H atoms can passivate internal defects created during the ion implantation process. The mechanism of the high efficiency is discussed in relation to electron-hole creations in the thin diamond layer under extremely high electric fields of 107 V/cm.

Polarons in conjugated polymers under high electric fields

1997 ◽  
Vol 55 (13) ◽  
pp. 8207-8210 ◽  
Author(s):  
M. N. Bussac ◽  
J. Dorignac ◽  
L. Zuppiroli
Keyword(s):  
Conjugated Polymers ◽  
Electric Fields ◽  
High Electric Fields

Current Status of Solid-State X-Ray Systems

1985 ◽  
Vol 43 ◽  
pp. 158-161
Author(s):  
Martin Peckerar ◽  
Anastasios Tousimis
Keyword(s):  
Solid State ◽  
Electric Fields ◽  
Spectral Lines ◽  
Current Status ◽  
Mobile Charge ◽  
Electron Hole ◽  
X Ray ◽  
Sensing Systems ◽  
Transmission Electron ◽  
Electron Microscopes

Solid state x-ray sensing systems have been used for many years in conjunction with scanning and transmission electron microscopes. Such systems conveniently provide users with elemental area maps and quantitative chemical analyses of samples. Improvements on these tools are currently sought in the following areas: sensitivity at longer and shorter x-ray wavelengths and minimization of noise-broadening of spectral lines. In this paper, we review basic limitations and recent advances in each of these areas. Throughout the review, we emphasize the systems nature of the problem. That is. limitations exist not only in the sensor elements but also in the preamplifier/amplifier chain and in the interfaces between these components.Solid state x-ray sensors usually function by way of incident photons creating electron-hole pairs in semiconductor material. This radiation-produced mobile charge is swept into external circuitry by electric fields in the semiconductor bulk.

Atomic Spectroscopy in the FIM

1986 ◽  
Vol 44 ◽  
pp. 758-761
Author(s):  
J. J. Hren ◽  
S. D. Walck
Keyword(s):  
Electron Microscope ◽  
Electric Fields ◽  
Atom Probe ◽  
Atomic Spectroscopy ◽  
Single Atom ◽  
Statistical Sampling ◽  
Commercial Instrument ◽  
Available Technology ◽  
High Electric Fields ◽  
Field Ion Microscope

The field ion microscope (FIM) has had the ability to routinely image the surface atoms of metals since Mueller perfected it in 1956. Since 1967, the TOF Atom Probe has had single atom sensitivity in conjunction with the FIM. “Why then hasn't the FIM enjoyed the success of the electron microscope?” The answer is closely related to the evolution of FIM/Atom Probe techniques and the available technology. This paper will review this evolution from Mueller's early discoveries, to the development of a viable commercial instrument. It will touch upon some important contributions of individuals and groups, but will not attempt to be all inclusive. Variations in instrumentation that define the class of problems for which the FIM/AP is uniquely suited and those for which it is not will be described. The influence of high electric fields inherent to the technique on the specimens studied will also be discussed. The specimen geometry as it relates to preparation, statistical sampling and compatibility with the TEM will be examined.

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