scholarly journals Intrinsic double-peak structure of the specific heat in low-dimensional quantum ferrimagnets

2002 ◽  
Vol 65 (21) ◽  
Author(s):  
Takashi Nakanishi ◽  
Shoji Yamamoto
Keyword(s):  
Specific Heat ◽  
Double Peak ◽  
Double Peak Structure ◽  
Peak Structure ◽  
Low Dimensional

The magnetocaloric effect with critical behavior of a periodic Anderson-like organic polymer

2016 ◽  
Vol 18 (1) ◽  
pp. 510-518 ◽  
Author(s):  
L. J. Ding ◽  
Y. Zhong ◽  
S. W. Fan ◽  
L. Y. Zhu
Keyword(s):  
Critical Behavior ◽  
Magnetic Entropy Change ◽  
Entropy Change ◽  
Organic Polymer ◽  
Magnetic Entropy ◽  
Cooling Process ◽  
Double Peak ◽  
Double Peak Structure ◽  
Peak Structure ◽  
Magnetic Cooling

The magnetic entropy change (−ΔS) shows a double-peak structure, indicating a double magnetic cooling process via demagnetization.

Double-peak structure of the nonresonant photoresponse of terahertz quantum Hall detectors

2008 ◽  
Vol 78 (17) ◽  
Author(s):  
G. Nachtwei ◽  
F. Gouider ◽  
C. Stellmach ◽  
G. Vasile ◽  
Yu. B. Vasilyev ◽  
...  
Keyword(s):  
Quantum Hall ◽  
Double Peak ◽  
Double Peak Structure ◽  
Peak Structure

On the double peak structure of avalanche photodiode response to monoenergetic x-rays at various temperatures and bias voltages

2018 ◽  
Vol 13 (01) ◽  
pp. C01033-C01033 ◽  
Author(s):  
C.M.B. Monteiro ◽  
F.D. Amaro ◽  
M.S. Sousa ◽  
M. Abdou-Ahmed ◽  
P. Amaro ◽  
...  
Keyword(s):  
Avalanche Photodiode ◽  
X Rays ◽  
Double Peak ◽  
Double Peak Structure ◽  
Peak Structure

Excess Conductance of MOS Diodes Suffered Current Stress and Elucidation of Induced Interface States

1994 ◽  
Vol 338 ◽  
Author(s):  
Masao Inoue ◽  
Junji Shirafuji
Keyword(s):  
Equivalent Circuit ◽  
Interface States ◽  
Constant Current ◽  
Double Peak ◽  
Equivalent Circuit Analysis ◽  
Current Stress ◽  
Double Peak Structure ◽  
Peak Structure ◽  
Substrate Resistance ◽  
Ac Conductance

ABSTRACTThe ac conductance-voltage (G–V) characteristics at various frequencies have been measured in MOS diodes which suffered constant current stress by Fowler–Nordheim (F–N) electron injection from Si substrate.It is found that a double-peak structure appears in G–V curve and grows continuously with proceeded current stress.The growth of two kinds of interface states is elucidated after subtracting the effect of oxide capacitance and substrate resistance by a simple equivalent circuit analysis.

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