Fundamental role of ion bombardment for the synthesis of cubic boron nitride films

2002 ◽  
Vol 65 (11) ◽  
Author(s):  
H. Hofsäss ◽  
H. Feldermann ◽  
S. Eyhusen ◽  
C. Ronning
Keyword(s):  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Ion Bombardment ◽  
Boron Nitride Films

The role of ion energy on the growth mechanism of cubic boron nitride films

2004 ◽  
Vol 447-448 ◽  
pp. 125-130 ◽  
Author(s):  
S. Eyhusen ◽  
H. Hofsäss ◽  
C. Ronning
Keyword(s):  
Boron Nitride ◽  
Growth Mechanism ◽  
Cubic Boron Nitride ◽  
Ion Energy ◽  
Boron Nitride Films

Damage effects from medium-energy ion bombardment during the growth of cubic-boron nitride films

2003 ◽  
Vol 21 (5) ◽  
pp. 1739-1744 ◽  
Author(s):  
R. Gago ◽  
M. Vinnichenko ◽  
B. Abendroth ◽  
A. Kolitsch ◽  
W. Möller
Keyword(s):  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Ion Bombardment ◽  
Medium Energy ◽  
Boron Nitride Films

On the role of ion bombardment in cubic boron nitride deposition

1997 ◽  
Vol 97 (1-3) ◽  
pp. 263-269 ◽  
Author(s):  
Stefan Reinke ◽  
Regine Freudenstein ◽  
Wilhelm Kulisch
Keyword(s):  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Ion Bombardment

Structural relationships in the synthesis of cubic boron nitride thin films by ion-assisted deposition

1994 ◽  
Vol 52 ◽  
pp. 638-639
Author(s):  
D. L. Medlin ◽  
T. A. Friedmann ◽  
P. B. Mirkarimi ◽  
M. J. Mills ◽  
K. F. McCarty
Keyword(s):  
Boron Nitride ◽  
Ion Irradiation ◽  
Cubic Boron Nitride ◽  
Film Stress ◽  
Bonded Phases ◽  
Structural Relationships ◽  
Precursor Material ◽  
Pressure Synthesis ◽  
Microstructure Of The Material

The allotropes of boron nitride include two sp2-bonded phases with hexagonal and rhombohedral structures (hBN and rBN) and two sp3-bonded phases with cubic (zincblende) and hexagonal (wurtzitic) structures (cBN and wBN) (Fig. 1). Although cBN is synthesized in bulk form by conversion of hBN at high temperatures and pressures, low-pressure synthesis of cBN as a thin film is more difficult and succeeds only when the growing film is simultaneously irradiated with a high flux of ions. Only sp2-bonded material, which generally has a disordered, turbostratic microstructure (tBN), will form in the absence of ion-irradiation. The mechanistic role of the irradiation is not well understood, but recent work suggests that ion-induced compressive film stress may induce the transformation to cBN.Typically, BN films are deposited at temperatures less than 1000°C, a regime for which the structure of the sp2-bonded precursor material dictates the phase and microstructure of the material that forms from conventional (bulk) high pressure treatment.

scholarly journals Nucleation and Growth of Cubic Boron Nitride Films Produced by Ion-Assisted Pulsed Laser Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
T. A. Friedmann ◽  
D. L. Medlin ◽  
P. B. Mirkarimi ◽  
K. F. McCarty ◽  
E. J. Klaus ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Growth Parameters ◽  
Cubic Boron Nitride ◽  
Ion Source ◽  
Growth Time ◽  
Grain Sizes ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Parametric Studies ◽  
Boron Nitride Films

ABSTRACTWe are studying the boron nitride system by using a pulsed excimer laser to ablate from hexagonal BN (hBN) targets to form cubic BN (cBN) films. We are depositing BN films on heated (25 - 800°C) Si (100) surfaces and are using a broad-beam ion source operated with Ar and N2 source gasses to produce BN films with a high percentage of sp3-bonded cBN. In order to understand and optimize the growth and nucleation of cBN films, parametric studies of the growth parameters have been performed. The best films to date show >85% sp3-bonded BN as determined from Fourier-transform infrared (FTIR) reflection spectroscopy. High resolution transmission electron microscopy (TEM) and selected area electron diffraction confirm the presence of cBN in these samples. The films are polycrystalline and show grain sizes up to 30- 40 nm. We find from both the FTIR and TEM analyses that the cBN content in these films evolves with growth time. Initially, the films are deposited as hBN and the cBN nucleates on this hBN underlayer. Importantly, the position of the cBN IR phonon also changes with growth time. Initially this mode appears near 1130 cm-1 and the position decreases with growth time to a constant value of 1085 cm-1. Since in bulk cBN this IR mode appears at 1065 cm-1, a large compressive stress induced by the ion bombardment is suggested. In addition, we report on the variation in cBN percentage with temperature.

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