Morphological instability theory for strained alloy film growth: The effect of compositional stresses and species-dependent surface mobilities on ripple formation during epitaxial film deposition

2001 ◽  
Vol 64 (23) ◽  
Author(s):  
B. J. Spencer ◽  
P. W. Voorhees ◽  
J. Tersoff
Keyword(s):  
Epitaxial Film ◽  
Film Growth ◽  
Alloy Film ◽  
Film Deposition ◽  
Morphological Instability ◽  
Ripple Formation ◽  
Instability Theory ◽  
Compositional Stresses

In Situ Investigation of TixAly Film Growth As A Function of Substrate Temperature and Film Stoichiometry

2000 ◽  
Vol 648 ◽  
Author(s):  
St. Lackner ◽  
R. Abermann
Keyword(s):  
Tensile Stress ◽  
Substrate Temperature ◽  
Film Growth ◽  
Alloy Film ◽  
Film Deposition ◽  
Film Stress ◽  
Alloy Formation ◽  
Alloy Films ◽  
In Situ Investigation ◽  
Stress Changes

AbstractThe growth of TixAly-alloy films was investigated by measuring the film stress during as well as after the film deposition under UHV-conditions with a cantilever beam technique. The alloy films were deposited on alumina substrates from two separate evaporation sources. The substrate temperature was varied from room temperature to 500°C and the alloy stoichiometry from Ti25Al75 to Ti75Al25.At a substrate temperature of 200°C the dependence of the growth stress of the alloy film on stoichiometry is pronounced and varies from tensile stress in the case of titanium rich alloy-films to compressive stress in aluminium rich films. The stress changes after deposition at 200°C are negligible for titanium rich alloys but in the case of aluminium rich alloys small tensile stress changes are measured.At a substrate temperature of 500°C the film stress is compressive and the dependence on stoichiometry is rather small. The stress vs. thickness curves of Ti25Al75-films, however, show unexpected oscillations during growth while at lower aluminum content stable stress curves are measured. The stress changes after deposition are large in each case, interpreted to indicate film recrystallisation and/or continued alloy formation.In a second series of experiments we have measured the internal stress changes in Ti25Al75-alloy films during annealing. It can be shown that the changes in the film stress can be correlated with changes in the film microstructure seen in the electron microscope (TEM).

scholarly journals A FRACTAL MODEL FOR THE FIRST STAGES OF THIN FILM GROWTH

Fractals ◽  
1996 ◽  
Vol 04 (03) ◽  
pp. 321-329 ◽  
Author(s):  
PABLO JENSEN ◽  
ALBERT-LÁSZLÓ BARABÁSI ◽  
HERNÁN LARRALDE ◽  
SHLOMO HAVLIN ◽  
H. EUGENE STANLEY
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Dynamical Evolution ◽  
Thin Film Deposition ◽  
Fractal Model ◽  
Film Deposition ◽  
Thin Film Growth ◽  
Small Cluster ◽  
Diffusion Controlled ◽  
Cluster Diffusion

In this paper, we briefly review a model that describes the diffusion-controlled aggregation exhibited by particles as they are deposited on a surface. This model allows us to understand many experiments of thin film deposition. In the Sec. 1, we describe the model, which incorporates deposition, particle and cluster diffusion, and aggregation. In Sec. 2, we study the dynamical evolution of the model. Finally, we analyze the effects of small cluster mobility and show that the introduction of cluster diffusion dramatically affects the dynamics of film growth. Some of these effects can be tested experimentally.

scholarly journals Large-scale molecular dynamics simulations of TiN/TiN(001) epitaxial film growth

2016 ◽  
Vol 34 (4) ◽  
pp. 041509 ◽  
Author(s):  
Daniel Edström ◽  
Davide G. Sangiovanni ◽  
Lars Hultman ◽  
Ivan Petrov ◽  
J. E. Greene ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Large Scale ◽  
Epitaxial Film ◽  
Film Growth ◽  
Dynamics Simulations ◽  
Epitaxial Film Growth

Diamond Films: Recent Developments in Theory and Practice

MRS Bulletin ◽  
1998 ◽  
Vol 23 (9) ◽  
pp. 28-31 ◽  
Author(s):  
A.M. Stoneham ◽  
I.J. Ford ◽  
P.R. Chalker
Keyword(s):  
Film Growth ◽  
Defect Density ◽  
Diamond Films ◽  
Electrical Contacts ◽  
Film Deposition ◽  
Theory And Practice ◽  
Maximum Effect ◽  
Recent Developments ◽  
Improved Performance ◽  
The Many

The diamond films of the early 1980s presented two quite different challenges. First how could this new form of diamond be exploited technically? Second, how could this clearly nonequilibrium generation of diamond be understood and the understanding be used to maximum effect? We shall be discussing the ideas of theory and modeling, and we will show how they have contributed to the interplay of science and technology.The science of diamond films is the art of beating nature in the use of carbon. Theory gives the understanding to improve this art. One way in which we improve on nature is in new geometries: controlled growth over selected surfaces o surface regions. The coverage, defect density, microstructure, and rate of growth are key issues. Another way to beat nature is controlled doping. Could wmake n-type semiconductors or lasers using diamond films? A third direction might be routes to control interfaces. Grai boundaries and the regions between small, misaligned crystals affect thermal properties and electron emission. Difficulties with electrical contacts may limit the use of diamond films as semiconductors or insulators. Substrate-film adhesion can determine tribological performance.If theory is to play a role in controlling film deposition, we need to understand the role of theory itself. Theory can add value at several distinct levels. At the highest level, modeling has the potential to provide a substitute for experiment, especially when information is needed about behavior at extreme conditions. When the phenomena are very fast or very complex, theory can be used to interpret limited experiments. At a more modest level, even simple quantitative models can illustrate the many processes occurring during film growth. Atomistic theories of this type can identify the rate-determining steps and point to ways of influencing them. Mesoscopic theories, especially combined with macroscopic approaches like elasticity theory, can identify routes to improved performance.

Retarded Growth of Sputtered HfO2 Films on Germanium

2004 ◽  
Vol 811 ◽  
Author(s):  
Koji Kita ◽  
Masashi Sasagawa ◽  
Masahiro Toyama ◽  
Kentaro Kyuno ◽  
Akira Toriumi
Keyword(s):  
Film Growth ◽  
Early Stage ◽  
Gate Oxide ◽  
Interface Layer ◽  
Film Deposition ◽  
Si Substrate ◽  
Equivalent Thickness ◽  
Ternary Compounds ◽  
Si Substrates

ABSTRACTHfO2 films were deposited by reactive sputtering on Ge and Si substrates simultaneously, and we found not only the interface layer but the HfO2 film was thinner on Ge substrate compared with that on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO2 film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before HfO2 film deposition. The role of metallic Hf is understandable by assuming a formation of volatile Hf-Ge-O ternary compounds at the early stage of film growth. These results show an advantage of HfO2/Ge over HfO2/Si systems from the viewpoint of further scaling of electrical equivalent thickness of the gate oxide films.

scholarly journals Solid-phase epitaxial film growth and optical properties of a ferroelectric oxide, Sr2Nb2O7

2017 ◽  
Vol 122 (13) ◽  
pp. 135305 ◽  
Author(s):  
Yukio Nezu ◽  
Yu-Qiao Zhang ◽  
Chunlin Chen ◽  
Yuichi Ikuhara ◽  
Hiromichi Ohta
Keyword(s):  
Optical Properties ◽  
Epitaxial Film ◽  
Film Growth ◽  
Solid Phase ◽  
Epitaxial Film Growth ◽  
Ferroelectric Oxide

scholarly journals Generation of Charged Ti Nanoparticles and Their Deposition Behavior with a Substrate Bias during RF Magnetron Sputtering

Coatings ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 443
Author(s):  
Ji-Hye Kwon ◽  
Du-Yun Kim ◽  
Nong-Moon Hwang
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Film Growth ◽  
Film Deposition ◽  
Calculated Density ◽  
X Ray ◽  
Positively Charged ◽  
Made In ◽  
Ti Films

This study is based on the film growth by non-classical crystallization, where charged nanoparticles (NPs) are the building block of film deposition. Extensive studies about the generation of charged NPs and their contribution to film deposition have been made in the chemical vapor deposition (CVD) process. However, only a few studies have been made in the physical vapor deposition (PVD) process. Here, the possibility for Ti films to grow by charged Ti NPs was studied during radio frequency (RF) sputtering using Ti target. After the generation of charged Ti NPs was confirmed, their influence on the film quality was investigated. Charged Ti NPs were captured on amorphous carbon membranes with the electric bias of −70 V, 0 V, +5 V, +15 V and +30 V and examined by transmission electron microscopy (TEM). The number density of the Ti NPs decreased with increasing positive bias, which showed that some of Ti NPs were positively charged and repelled by the positively biased TEM membrane. Ti films were deposited on Si substrates with the bias of −70 V, 0 V and +30 V and analyzed by TEM, field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and X-ray reflectivity (XRR). The film deposited at −70 V had the highest thickness of 180 nm, calculated density of 4.974 g/cm3 and crystallinity, whereas the film deposited at +30 V had the lowest thickness of 92 nm, calculated density of 3.499 g/cm3 and crystallinity. This was attributed to the attraction of positively charged Ti NPs to the substrate at −70 V and to the landing of only small-sized neutral Ti NPs on the substrate at +30 V. These results indicate that the control of charged NPs is necessary to obtain a high quality thin film at room temperature.

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