scholarly journals Resonance enhancement of x-rays and fluorescence yield from marker layers in thin films

2001 ◽  
Vol 64 (23) ◽  
Author(s):  
S. K. Ghose ◽  
B. N. Dev ◽  
Ajay Gupta
Keyword(s):  
Thin Films ◽  
Fluorescence Yield ◽  
X Rays ◽  
Resonance Enhancement

Elemental Analysis of thin Films Using Inner Shell Electron Energy Losses

1976 ◽  
Vol 34 ◽  
pp. 414-415
Author(s):  
D. E. Johnson ◽  
M. Isaacson
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Elemental Analysis ◽  
Large Fraction ◽  
Fluorescence Yield ◽  
Detection Sensitivity ◽  
X Rays ◽  
X Ray ◽  
Electron Energy Loss

The use of electron energy loss spectroscopy (ELS) for elemental analysis of thin films holds considerable promise. This technique has definite advantages in comparison with energy dispersive X-ray spectroscopy (EDS) for two fundamental reasons. First, the detection sensitivity is independent of the fluorescence yield, since for each inner shell excitation an energy loss electron exists as opposed to only a finite probability that an excitation will result in a X-ray emitted. Second, the information carrying energy loss electrons are contained in a small solid angle about 0° scattering angle as opposed to the resulting X-rays which are emitted uniformly over 4Π steradians. This means that a large fraction of the energy loss electrons can be detected (up to ∼90%) compared to only a small fraction (∼1%) of the emitted X-rays with an EDS system.

How to Use the Features of Total Reflection of X-Rays for Energy Dispersive XRF

1988 ◽  
Vol 32 ◽  
pp. 105-114 ◽  
Author(s):  
H. Schwenke ◽  
W. Berneike ◽  
J. Knoth ◽  
U. Weisbrod
Keyword(s):  
Thin Films ◽  
Penetration Depth ◽  
Fluorescence Analysis ◽  
Total Reflection ◽  
X Rays ◽  
X Ray ◽  
Characteristic Features ◽  
Respective Characteristic ◽  
Nanometer Regime ◽  
Sensitive Method

AbstractThe total reflection of X-rays is mainly determined by three parameters , that is the orltical angle, the reflectivity and the penetration depth. For X-ray fluorescence analysis the respective characteristic features can be exploited in two rather different fields of application. In the analysis of trace elements in samples placed as thin films on optical flats, detection limits as low as 2 pg or 0.05 ppb, respectively, have been obtained. In addition, a penetration depth in the nanometer regime renders Total Reflection XRF an inherently sensitive method for the elemental analysis of surfaces. This paper outlines the main physical and constructional parameters for instrumental design and quantitation in both branches of TXRF.

Band gap tuning and p to n-type transition in Mn-doped CuO nanostructured thin films

2022 ◽  
Vol 43 (1) ◽  
pp. 012801
Author(s):  
R. Rahaman ◽  
M. Sharmin ◽  
J. Podder
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spray Pyrolysis Technique ◽  
Band Gap Energy ◽  
Dielectric Constants ◽  
X Rays ◽  
Electron Effective Mass ◽  
Mn Doping ◽  
Type Transition ◽  
Mn Doped

Abstract Here we discuss the synthesis of copper (II) oxide (CuO) and manganese (Mn)-doped CuO thin films varying with 0 to 8 at% Mn using the spray pyrolysis technique. As-deposited film surfaces comprised of agglomerated spherical nanoparticles and a semi-spongy porous structure for 4 at% Mn doping. Energy dispersive analysis of X-rays confirmed the chemical composition of the films. X-ray diffraction spectra showed a polycrystalline monoclinic structure with the predominance of the ( 11) peak. Optical band gap energy for direct and indirect transitions was estimated in the ranges from 2.67–2.90 eV and 0.11–1.73 eV, respectively. Refractive index and static dielectric constants were computed from the optical spectra. Electrical resistivity of CuO and Mn-doped CuO (Mn:CuO) thin films was found in the range from 10.5 to 28.6 Ω·cm. The tiniest electron effective mass was calculated for 4 at% Mn:CuO thin films. P to n-type transition was observed for 4 at% Mn doping in CuO films. Carrier concentration and mobility were found in the orders of 1017 cm–3 and 10–1 cm2/(V·s), respectively. The Hall coefficient was found to be between 9.9 and 29.8 cm3/C. The above results suggest the suitability of Mn:CuO thin films in optoelectronic applications.

scholarly journals The Use of Synchrotron Radiation in the Energy Calibration of Astronomical Apparatus

1972 ◽  
Vol 14 ◽  
pp. 642-646
Author(s):  
G. A. Gurzadyan ◽  
J. B. Ohanesyan
Keyword(s):  
Thin Films ◽  
Synchrotron Radiation ◽  
Electron Energy ◽  
Electron Accelerator ◽  
Energy Calibration ◽  
Ideal Solution ◽  
X Rays ◽  
Special Equipment ◽  
Physics Institute ◽  
Wide Range

The problem of energy calibration of astrophysical apparatus is essential for every or almost every space experiment. The utilization of synchrotron radiation from an electronic accelerator should perhaps be taken as an ideal solution of this problem, if of course, such a possibility is available.Special equipment for the extraction of synchrotron radiation has been devised at the circular electron accelerator with a maximum electron energy of 6 GeV, in the Physics Institute of Erevan (Gurzadyan and Ohanesyan, 1972). The equipment is designed primarily for the energy calibration of astronomical apparatus operating in a vacuum and hard ultraviolet and X rays. However, the equipment can also be applied to a wide range of experiments relating to the physics of solids, crystallography, physics of thin films, X rays, etc.

scholarly journals Synthesis and Characterisation of Thin Films of Bismuth Triiodide for Semiconductor Radiation Detectors

2014 ◽  
Vol 2014 ◽  
pp. 1-3 ◽  
Author(s):  
Alka Garg ◽  
Monika Tomar ◽  
Vinay Gupta
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Room Temperature ◽  
Active Material ◽  
Visible Region ◽  
Radiation Detectors ◽  
Radiation Absorption ◽  
X Rays ◽  
X Ray ◽  
Bismuth Iodide

Bismuth iodide is a potentially active material for room temperature radiation detector, as it is well reported in the literature that it has both wide energy band gap and high atomic absorption coefficient. Crystalline films of high atomic number and high radiation absorption coefficient can absorb the X-rays and convert them directly into electrical charges which can be read by imaging devices. Therefore, it was proposed to grow thin films of Bismuth iodide on glass substrate using thermal evaporation technique in vacuum to avoid the inclusion of impurities in the films. The structural studies of the films were carried out using XRD and optical absorption measurement was carried out in the UV/VIS region using spectrophotometer. All Bismuth iodide films grown at room temperature are polycrystalline and show X-ray diffraction peaks at angles reported in research papers. The optical transmission spectra of BiI3 films show a high transmission of about 80% in visible region with a sharp fall near the fundamental absorption at 650 nm. Resistivity of the as-grown film was found to be around 1012 ohm-cm suitable value for X-ray detection application. Films were subjected to scanning electron microscopy to study the growth features of both as-grown and annealed films.

Quantitative basis for the rocking-curve measurement of preferred orientation in polycrystalline thin films

2003 ◽  
Vol 36 (3) ◽  
pp. 890-897 ◽  
Author(s):  
H. Toraya ◽  
H. Hibino ◽  
T. Ida ◽  
N. Kuwano
Keyword(s):  
Thin Films ◽  
Density Distribution ◽  
Volume Fraction ◽  
Preferred Orientation ◽  
Crystal Plane ◽  
X Rays ◽  
Rocking Curve ◽  
Polycrystalline Thin Films ◽  
Least Squares Fit ◽  
Quantitative Basis

A quantitative basis for the rocking-curve measurement of the preferred orientation in polycrystalline thin films is presented. Gaussian functions are used for modeling the density distribution of the normals to the crystal plane around the normal to the specimen surface. An intensity formula for the rocking curve is derived from the kinematical theory applied to the case of asymmetric Bragg reflection. The density distribution is determined by the least-squares fit of a theoretical rocking curve to the observed curve, and a volume fraction of crystallites, whose normals to the crystal plane are present within a defined angular range, can be obtained from it. AlN and Au polycrystalline thin films were used for testing the present procedure. Parameter values of the model function, refined using both synchrotron radiation and laboratory X-rays, agree well with each other within the experimental errors although these intensity data sets were collected under different experimental conditions in instrumentation and wavelength. A distribution of depth-dependent preferred orientation in the AlN thin film was revealed by using double-layer and multiple-layer models. A very small degree of preferred orientation in Au thin films could also be measured. Parallel-beam optics and integrated intensities instead of peak height intensities are important for reliable rocking curve measurement.

Magnetic Structure of Multilayers from Soft-X-Ray Magnetic Circular Dichroism

1994 ◽  
Vol 375 ◽  
Author(s):  
C. T. Chen ◽  
Y. U. Idzerda ◽  
C.-C. Kao ◽  
L. H. Tjeng ◽  
H.-J. Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Circular Dichroism ◽  
Magnetic Circular Dichroism ◽  
Magnetic Thin Films ◽  
X Rays ◽  
X Ray ◽  
Specific Manner ◽  
Left And Right ◽  
The Difference ◽  
Circular Dichroïsm

AbstractSoft-x-ray magnetic circular dichroism (MCD) is the difference between the absorptivity or reflectivity of left and right circularly polarized soft-x-rays at the magnetically interesting L2,3- edges of 3d transition metals or the M4,5-edges of the 4f rare earth elements. Thanks to its large absorption cross-section and strong MCD effect, this technique has become a powerful new means for probing, in an element- and site-specific manner, the magnetic properties of ultra-thin films and multilayers. Soft-x-ray MCD experiments, recently conducted at the Dragon beamline, are utilized to demonstrate the recent progress in this technique and its applications in the research of magnetic thin films.

Resonance enhancement of diffuse scattering of x-rays in a waveguide heterostructure

JETP Letters ◽  
1997 ◽  
Vol 66 (4) ◽  
pp. 236-240 ◽  
Author(s):  
A. V. Andreev ◽  
Yu. V. Ponomarev ◽  
I. R. Prudnikov ◽  
N. N. Salashchenko
Keyword(s):  
Diffuse Scattering ◽  
X Rays ◽  
Resonance Enhancement

Electrochemical Deposition and Characterization of Cd-Fe-Se Thin Films

2009 ◽  
Vol 68 ◽  
pp. 69-76 ◽  
Author(s):  
S. Thanikaikarasan ◽  
T. Mahalingam ◽  
K. Sundaram ◽  
Tae Kyu Kim ◽  
Yong Deak Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Hexagonal Structure ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Iron Selenide ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
Cadmium Iron Selenide ◽  
Deposited Films

Cadmium iron selenide (Cd-Fe-Se) thin films were deposited onto tin oxide (SnO2) coated conducting glass substrates from an aqueous electrolytic bath containing CdSO4, FeSO4 and SeO2 by potentiostatic electrodeposition. The deposition potentials of Cadmium (Cd), Iron (Fe), Selenium (Se) and Cadmium-Iron-Selenide (Cd-Fe-Se) were determined from linear cathodic polarization curves. The deposited films were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive analysis by x-rays (EDX) and optical absorption techniques, respectively. X-ray diffraction patterns shows that the deposited films are found to be hexagonal structure with preferential orientation along (100) plane. The effect of FeSO4 concentration on structural, morphological, compositional and optical properties of the films are studied and discussed in detail.

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