Oxygen ordering inYBa2Cu3O6+xusing Monte Carlo simulation and analytic theory

2001 ◽  
Vol 64 (22) ◽  
Author(s):  
Dan Mønster ◽  
Per-Anker Lindgård ◽  
Niels Hessel Andersen
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Analytic Theory ◽  
Oxygen Ordering

Monte Carlo simulation of oxygen ordering in YBa 2 Cu 3 O z .

1989 ◽  
Vol 162-164 ◽  
pp. 225-226 ◽  
Author(s):  
C.P. Burmester ◽  
M.E. Mann ◽  
G. Ceder ◽  
L.T. Wille ◽  
D. de Fontaine
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Oxygen Ordering

SOS Simulation of Sputtered Nanoripples

2003 ◽  
Vol 777 ◽  
Author(s):  
Maria Stepanova ◽  
Steven K. Dew
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Surface Morphology ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Systematic Investigation ◽  
Analytic Theory ◽  
Surface Relaxation ◽  
Sos Model ◽  
Effect Of Surface

AbstractWe report a Monte-Carlo simulation of nanostructures that self-organize on surfaces under oblique ion bombardment. We have developed a quantitative solid-on-solid (SOS) model that describes the surface morphology during ion bombardment and performed the first systematic investigation for Cu bombarded by 1000 eV Ar+ ions at 0°–80° incidence. When the angle of ion incidence exceeds ∼40°, we observe 2–5 nm wide ripples aligned parallel to the ion beam plane in agreement with existing analytic theory. We also detect ripples directed perpendicularly to the ion beam plane, but the conditions under which they arise disagree with the theory. We have investigated the effect of surface relaxation on the morphologies and found two different regimes of ripple evolution depending on the efficiency of relaxation. After ∼100 nm are removed, secondary 10–50 nm wide patterns are formed provided that relaxation is sufficiently high. We compare our simulations with those from other authors and with experiments.

Oxygen-ordering phenomena in YBa2Cu3O6+x studied by Monte Carlo simulation

1993 ◽  
Vol 217 (1-2) ◽  
pp. 34-52 ◽  
Author(s):  
T. Fiig ◽  
J.V. Andersen ◽  
N.H. Andersen ◽  
P.A. Lindgård ◽  
O.G. Mouritsen ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Oxygen Ordering

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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