General solution for the complex frequency shift in microwave measurements of thin films

2001 ◽  
Vol 64 (22) ◽  
Author(s):  
D.-N. Peligrad ◽  
B. Nebendahl ◽  
M. Mehring ◽  
A. Dulčić ◽  
M. Požek ◽  
...  
Keyword(s):  
Thin Films ◽  
General Solution ◽  
Frequency Shift ◽  
Microwave Measurements ◽  
Complex Frequency

Considerations of a classical model for spontaneous emission in a nonhomogeneous medium

1992 ◽  
Vol 70 (8) ◽  
pp. 631-636
Author(s):  
André Reid ◽  
Michel Piché
Keyword(s):  
General Solution ◽  
Frequency Shift ◽  
Spontaneous Emission ◽  
Transition Rate ◽  
Classical Model ◽  
Nonhomogeneous Medium ◽  
Effective Polarizability ◽  
Analytical Expressions

The classical model for spontaneous emission from a source embedded in a nonhomogeneous medium is examined in a new light. It is shown that the general solution may be expressed in terms of an effective polarizability associated with the transition being modeled. The case of a transition occurring in the vicinity of a perfect mirror is then studied as an illustration. Analytical expressions for the frequency shift and changes in the transition rate as a function of distance are found.

HIGH QUALITY SmBa2Cu3O7-X THIN FILMS FOR MICROWAVE APPLICATIONS

2003 ◽  
Vol 17 (04n06) ◽  
pp. 768-772 ◽  
Author(s):  
M. A. BOFFA ◽  
F. BOBBA ◽  
A. M. CUCOLO ◽  
R. MONACO
Keyword(s):  
Thin Films ◽  
Microwave Measurements ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Oxygen Pressure ◽  
Afm Analysis ◽  
Microstrip Resonators ◽  
Microwave Applications ◽  
Critical Current Density Jc

In this paper we report on the analysis of the surface properties of c-axis oriented, highly epitaxial SmBa 2 Cu 3 O 7-X thin films grown by high oxygen pressure d.c. sputtering technique on (100)k LaAlO 3 substrates. Structural and morphological characterizations of the samples were carried out by means of X-Ray diffraction and AFM analysis. The AFM images show a surface morphology with characteristic screw dislocations with roughness of 2-3 nm on 1 μ m 2 area. The superconducting properties indicate a critical temperature Tc(R=0)>90K and a critical current density Jc>1*106A/cm 2 at T=77K. Preliminary microwave measurements on meanderline microstrip resonators show surface residual resistances Rs<13μΩ a 1 GHz at T=4.2K .

scholarly journals Intrinsic nonlinearity probed by intermodulation distortion microwave measurements on high quality MgB2 thin films

2006 ◽  
Vol 88 (14) ◽  
pp. 142510 ◽  
Author(s):  
G. Cifariello ◽  
M. Aurino ◽  
E. Di Gennaro ◽  
G. Lamura ◽  
A. Andreone ◽  
...  
Keyword(s):  
Thin Films ◽  
Intermodulation Distortion ◽  
Microwave Measurements ◽  
High Quality ◽  
Intrinsic Nonlinearity ◽  
Mgb2 Thin Films

Microwave measurements of the absolute London penetration depth in double-sided YBa2Cu3O7−x thin films on sapphire

2002 ◽  
Vol 73 (2) ◽  
pp. 335-344 ◽  
Author(s):  
A. G. Zaitsev ◽  
R. Schneider ◽  
G. Linker ◽  
F. Ratzel ◽  
R. Smithey ◽  
...  
Keyword(s):  
Thin Films ◽  
Penetration Depth ◽  
Microwave Measurements ◽  
London Penetration Depth ◽  
The Absolute

scholarly journals Комбинационное рассеяние света в эвтектическом композите InSb-MnSb

2020 ◽  
Vol 54 (4) ◽  
pp. 341
Author(s):  
И.Х. Мамедов ◽  
Д.Г. Араслы ◽  
Р.Н. Рагимов ◽  
А.А. Халилова
Keyword(s):  
Thin Films ◽  
Frequency Shift ◽  
Raman Spectra ◽  
High Frequency ◽  
Theoretical Data ◽  
Eutectic Composite ◽  
Flash Evaporation ◽  
Evaporation Method ◽  
The Matrix ◽  
High Frequency Shift

Raman spectra of bulk samples of the InSb-MnSb eutectic composite and their thin films prepared by the flash evaporation method have been studied. In the Raman spectra observed TO and LO modes at frequencies of 179.5 cm-1 and 192.4 cm-1 correspond to InSb compound and also the peaks at frequencies 122 cm-1, 127 cm-1, 167 cm-1, 211 cm-1, 245.5 cm-1 correspond to theoretical data for MnSb as is well known from literature. The TO mode in the Raman spectra for films is shifted toward lower energies (178 cm-1), but the LO mode is higher (196 cm-1). The high-frequency shift of the LO mode in the composite with compared its value for InSb is probably due to the presence of deformation at the matrix-inclusion interface, as well as the contribution by surface phonons scattering.

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