Anomalous strain effect inLa0.8Ba0.2MnO3epitaxial thin film: Role of the orbital degree of freedom in stabilizing ferromagnetism

2001 ◽  
Vol 64 (22) ◽  
Author(s):  
Teruo Kanki ◽  
Hidekazu Tanaka ◽  
Tomoji Kawai
Keyword(s):  
Thin Film ◽  
Degree Of Freedom ◽  
Strain Effect ◽  
Orbital Degree

scholarly journals Role of the orbital degree of freedom in iron-based superconductors

2017 ◽  
Vol 2 (1) ◽  
Author(s):  
Ming Yi ◽  
Yan Zhang ◽  
Zhi-Xun Shen ◽  
Donghui Lu
Keyword(s):  
Degree Of Freedom ◽  
Iron Based Superconductors ◽  
Orbital Degree ◽  
Iron Based

scholarly journals Role of Orbital Degree of Freedom in Photoemission Spectra of Alkali-Metal-Doped C60

2002 ◽  
Vol 71 (Suppl) ◽  
pp. 205-207 ◽  
Author(s):  
Tadahiko Chida ◽  
Shugo Suzuki ◽  
Kenji Nakao
Keyword(s):  
Alkali Metal ◽  
Degree Of Freedom ◽  
Orbital Degree ◽  
Metal Doped

scholarly journals Crystal and magnetic structure ofLa1−xSr1+xMnO4: Role of the orbital degree of freedom

2005 ◽  
Vol 71 (2) ◽  
Author(s):  
D. Senff ◽  
P. Reutler ◽  
M. Braden ◽  
O. Friedt ◽  
D. Bruns ◽  
...  
Keyword(s):  
Magnetic Structure ◽  
Degree Of Freedom ◽  
Orbital Degree ◽  
Crystal And Magnetic Structure

On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

scholarly journals Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

2021 ◽  
Vol 13 (3) ◽  
pp. 4156-4164
Author(s):  
Mari Napari ◽  
Tahmida N. Huq ◽  
David J. Meeth ◽  
Mikko J. Heikkilä ◽  
Kham M. Niang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Surface Passivation ◽  
Cu2o Thin Film ◽  
P Type

scholarly journals Phase transition in perovskite manganites with orbital degree of freedom

2000 ◽  
Vol 61 (21) ◽  
pp. 14647-14655 ◽  
Author(s):  
S. Okamoto ◽  
S. Ishihara ◽  
S. Maekawa
Keyword(s):  
Phase Transition ◽  
Degree Of Freedom ◽  
Perovskite Manganites ◽  
Orbital Degree
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