Electron-phonon coupling and optical transitions for indirect-gap semiconductor nanocrystals

2001 ◽  
Vol 64 (19) ◽  
Author(s):  
C. Delerue ◽  
G. Allan ◽  
M. Lannoo
2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Volodymyr Dzhagan ◽  
Mykhailo Valakh ◽  
Nikolai Mel'nik ◽  
Olexandra Rayevska ◽  
Irina Lokteva ◽  
...  

Resonant Raman spectroscopy has been employed to explore the first- and higher-order phonon spectra of several kinds of II-VI nanocrystals (NCs), with the aim of better understanding of the nature of phonon modes and forming a unified view onto the vibrational spectrum of semiconductor NCs. Particularly, besides the previously discussed TO, SO, LO, and 2LO modes, the combinational modes of TO+LO and SO+LO can be assumed to account for the lineshape of the spectrum below 2LO band. No trace of 2TO or 2SO band was detected, what can be the result of the dominance of Fröhlich mechanism in electron-phonon coupling in II-VI compounds. The resonant phonon Raman spectrum of NCs smaller than 2 nm is shown to be dominated by a broad feature similar to the SO mode of larger NCs or phonon density of states of a bulk crystal.


2021 ◽  
Vol 12 (6) ◽  
pp. 1690-1695
Author(s):  
Zhongyu Liu ◽  
Yingwei Li ◽  
Wonyong Shin ◽  
Rongchao Jin

2021 ◽  
Vol 103 (2) ◽  
Author(s):  
I.Yu. Sklyadneva ◽  
R. Heid ◽  
P. M. Echenique ◽  
E. V. Chulkov

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Rui Su ◽  
Zhaojian Xu ◽  
Jiang Wu ◽  
Deying Luo ◽  
Qin Hu ◽  
...  

AbstractThe performance of perovskite photovoltaics is fundamentally impeded by the presence of undesirable defects that contribute to non-radiative losses within the devices. Although mitigating these losses has been extensively reported by numerous passivation strategies, a detailed understanding of loss origins within the devices remains elusive. Here, we demonstrate that the defect capturing probability estimated by the capture cross-section is decreased by varying the dielectric response, producing the dielectric screening effect in the perovskite. The resulting perovskites also show reduced surface recombination and a weaker electron-phonon coupling. All of these boost the power conversion efficiency to 22.3% for an inverted perovskite photovoltaic device with a high open-circuit voltage of 1.25 V and a low voltage deficit of 0.37 V (a bandgap ~1.62 eV). Our results provide not only an in-depth understanding of the carrier capture processes in perovskites, but also a promising pathway for realizing highly efficient devices via dielectric regulation.


2021 ◽  
Vol 6 (1) ◽  
Author(s):  
Qing Dong ◽  
Quanjun Li ◽  
Shujia Li ◽  
Xuhan Shi ◽  
Shifeng Niu ◽  
...  

AbstractThe adoption of high pressure not only reinforces the comprehension of the structure and exotic electronic states of transition metal dichalcogenides (TMDs) but also promotes the discovery of intriguing phenomena. Here, 1T-TaS2 was investigated up to 100 GPa, and re-enhanced superconductivity was found with structural phase transitions. The discovered I4/mmm TaS2 presents strong electron–phonon coupling, revealing a good superconductivity of the nonlayered structure. The P–T phase diagram shows a dome shape centered at ~20 GPa, which is attributed to the distortion of the 1T structure. Accompanied by the transition to nonlayered structure above 44.5 GPa, the superconducting critical temperature shows an increasing trend and reaches ~7 K at the highest studied pressure, presenting superior superconductivity compared to the original layered structure. It is unexpected that the pressure-induced re-enhanced superconductivity was observed in TMDs, and the transition from a superconductor with complicated electron-pairing mechanism to a phonon-mediated superconductor would expand the field of pressure-modified superconductivity.


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