Surface photovoltage effects onp-GaAs (100) from core-level photoelectron spectroscopy using synchrotron radiation and a laser

2001 ◽  
Vol 64 (15) ◽  
Author(s):  
S. Tanaka ◽  
S. D. More ◽  
J. Murakami ◽  
M. Itoh ◽  
Y. Fujii ◽  
...  
2002 ◽  
Vol 09 (02) ◽  
pp. 1297-1301 ◽  
Author(s):  
SENKU TANAKA ◽  
SAM D. MORÉ ◽  
KAZUTOSHI TAKAHASHI ◽  
MASAO KAMADA ◽  
TOMOHIRO NISHITANI ◽  
...  

Core-level photoelectron spectroscopy with the combination of synchrotron radiation (SR) and a laser was used for exploring the surface-photovoltage (SPV) effect and its temporal profiles in a GaAs–GaAsP superlattice (SL). It was observed that the SPV value in the SL is suppressed as compared with a bulk GaAs. However, no significant difference was found in the temporal profile between the bulk and the SL. It is suggested that the suppression of the SPV in the SL is dominantly due to the small value of band bending under thermal equilibrium.


2001 ◽  
Vol 280 (1-3) ◽  
pp. 150-155 ◽  
Author(s):  
Florence Jolly ◽  
François Rochet ◽  
Georges Dufour ◽  
Christoph Grupp ◽  
Amina Taleb-Ibrahimi

2017 ◽  
Vol 666 ◽  
pp. 104-112 ◽  
Author(s):  
A. Sandell ◽  
A. Schaefer ◽  
D. Ragazzon ◽  
M.H. Farstad ◽  
A. Borg

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