Bulk and local dynamics in glass-forming liquids: A viscosity, electrical conductivity, andNMRstudy of aluminosilicate melts

2001 ◽  
Vol 64 (2) ◽  
Author(s):  
G. Gruener ◽  
P. Odier ◽  
D. De Sousa Meneses ◽  
P. Florian ◽  
P. Richet
Keyword(s):  
Electrical Conductivity ◽  
Local Dynamics ◽  
Glass Forming

Chalcogenide Glasses

MRS Bulletin ◽  
1987 ◽  
Vol 12 (5) ◽  
pp. 36-39 ◽  
Author(s):  
P. Craig Taylor
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Periodic Table ◽  
Chalcogenide Glasses ◽  
Charge Carriers ◽  
Arsenic Trisulfide ◽  
Glass Forming ◽  
Optical Gap ◽  
Arsenic Triselenide

Although there are some significant exceptions, most important glass-forming systems contain elements from the sixth, or chalcogenide, column of the periodic table (oxygen, sulfur, selenium, or tellurium). The glasses which contain oxygen are typically insulators, while those which contain the heavier chalcogen elements are usually semiconductors. Even though oxygen is technically a chalcogen element, the term “chalcogenide glass” is commonly used to denote those largely covalent, semiconducting glasses which contain sulfur, selenium, or tellurium as one of the constituents.The chalcogenide glasses are called semiconducting glasses because of their electrical properties. The electrical conductivity in these glasses depends exponentially on the temperature with an activation energy which is approximately one half of the optical gap. In this sense these glasses exhibit electrical properties similar to those in intrinsic crystalline semiconductors. The analogy is by no means perfect. The mobilities for the charge carriers in these glasses are very low (< 10 cm2/V-s) compared to crystalline semiconductors, and there are even discrepancies in determining the sign of the charge carriers from measurements of the Hall effect and the Seebeck effect.The first detailed studies of the chalcogenide glasses were performed about 30 years ago. For many years the prototype compositions have been selenium (Se), arsenic triselenide (As2Se3) or arsenic trisulfide (As2S3), and germanium diselenide (GeSe2) or germanium disulfide (GeS2).

The glass-forming region and electrical conductivity of GeBiS glasses

1990 ◽  
Vol 116 (2-3) ◽  
pp. 206-218 ◽  
Author(s):  
L. Tichý ◽  
H. Tichá ◽  
L. Beneš ◽  
J. Málek
Keyword(s):  
Electrical Conductivity ◽  
Glass Forming

Correlation between electrical conductivity, viscosity, and structure in borosilicate glass-forming melts

2007 ◽  
Vol 75 (5) ◽  
Author(s):  
A. Grandjean ◽  
M. Malki ◽  
C. Simonnet ◽  
D. Manara ◽  
B. Penelon
Keyword(s):  
Electrical Conductivity ◽  
Borosilicate Glass ◽  
Glass Forming

Removing Substrate Background in TEM Microanalysis

1974 ◽  
Vol 32 ◽  
pp. 568-569
Author(s):  
John C. Russ ◽  
Nicholas C. Barbi
Keyword(s):  
Electrical Conductivity ◽  
Rapid Growth ◽  
Organic Film ◽  
Absolute Concentration ◽  
Background Signal ◽  
X Ray ◽  
Elemental Concentrations ◽  
Transmission Electron ◽  
Electron Microscopes ◽  
The Continuum

The rapid growth of interest in attaching energy-dispersive x-ray analysis systems to transmission electron microscopes has centered largely on microanalysis of biological specimens. These are frequently either embedded in plastic or supported by an organic film, which is of great importance as regards stability under the beam since it provides thermal and electrical conductivity from the specimen to the grid.Unfortunately, the supporting medium also produces continuum x-radiation or Bremsstrahlung, which is added to the x-ray spectrum from the sample. It is not difficult to separate the characteristic peaks from the elements in the specimen from the total continuum background, but sometimes it is also necessary to separate the continuum due to the sample from that due to the support. For instance, it is possible to compute relative elemental concentrations in the sample, without standards, based on the relative net characteristic elemental intensities without regard to background; but to calculate absolute concentration, it is necessary to use the background signal itself as a measure of the total excited specimen mass.

Macromolecular structures of biological specimens are not obscured by controlled osmium impregnation

1983 ◽  
Vol 41 ◽  
pp. 606-607
Author(s):  
Klaus-Ruediger Peters ◽  
Samuel A. Green
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Critical Point ◽  
Metal Films ◽  
High Magnification ◽  
Osmium Impregnation ◽  
Instrumental Resolution ◽  
20 Nm ◽  
Continuous Metal

High magnification imaging of macromolecules on metal coated biological specimens is limited only by wet preparation procedures since recently obtained instrumental resolution allows visualization of topographic structures as smal l as 1-2 nm. Details of such dimensions may be visualized if continuous metal films with a thickness of 2 nm or less are applied. Such thin films give sufficient contrast in TEM as well as in SEM (SE-I image mode). The requisite increase in electrical conductivity for SEM of biological specimens is achieved through the use of ligand mediated wet osmiuum impregnation of the specimen before critical point (CP) drying. A commonly used ligand is thiocarbohvdrazide (TCH), first introduced to TEM for en block staining of lipids and glvcomacromolecules with osmium black. Now TCH is also used for SEM. However, after ligand mediated osinification nonspecific osmium black precipitates were often found obscuring surface details with large diffuse aggregates or with dense particular deposits, 2-20 nm in size. Thus, only low magnification work was considered possible after TCH appl ication.

Electron Microscopy of Silicon Nitride-Based Ceramics

1991 ◽  
Vol 49 ◽  
pp. 926-927
Author(s):  
Gareth Thomas
Keyword(s):  
Electron Microscopy ◽  
High Temperature ◽  
Silicon Nitride ◽  
World Wide ◽  
Sintering Temperature ◽  
Liquid Phase Sintering ◽  
High Temperature Strength ◽  
Sintering Additives ◽  
Glass Forming ◽  
Dense Product

Silicon nitride and silicon nitride based-ceramics are now well known for their potential as hightemperature structural materials, e.g. in engines. However, as is the case for many ceramics, in order to produce a dense product, sintering additives are utilized which allow liquid-phase sintering to occur; but upon cooling from the sintering temperature residual intergranular phases are formed which can be deleterious to high-temperature strength and oxidation resistance, especially if these phases are nonviscous glasses. Many oxide sintering additives have been utilized in processing attempts world-wide to produce dense creep resistant components using Si3N4 but the problem of controlling intergranular phases requires an understanding of the glass forming and subsequent glass-crystalline transformations that can occur at the grain boundaries.

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