Biexciton binding energy and exciton–LO-phonon scattering in ZnSe quantum wires

2001 ◽  
Vol 63 (15) ◽  
Author(s):  
H. P. Wagner ◽  
H.-P. Tranitz ◽  
R. Schuster ◽  
G. Bacher ◽  
A. Forchel
Keyword(s):  
Binding Energy ◽  
Phonon Scattering ◽  
Quantum Wires ◽  
Biexciton Binding Energy

Biexciton Binding Energy in ZnSe Quantum Wells and Quantum Wires

2002 ◽  
Vol 231 (1) ◽  
pp. 11-18 ◽  
Author(s):  
H.P. Wagner ◽  
H.-P. Tranitz ◽  
W. Langbein ◽  
J.M. Hvam ◽  
G. Bacher ◽  
...  
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Biexciton Binding Energy

A QUANTUM MONTE CARLO STUDY ON EXCITONIC COMPLEXES IN GaAs/AlGaAs QUANTUM WIRES

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3985-3988 ◽  
Author(s):  
TAKUMA TSUCHIYA
Keyword(s):  
Monte Carlo ◽  
Binding Energy ◽  
Quantum Monte Carlo ◽  
Quantum Wires ◽  
Monte Carlo Study ◽  
Binding Energies ◽  
Wave Functions ◽  
Diffusion Monte Carlo ◽  
Biexciton Binding Energy ◽  
Diffusion Monte Carlo Method

Binding energies of biexcitons and charged excitons in GaAs/Al 0.3 Ga 0.7 As quantum wires were calculated by the diffusion Monte Carlo method. The binding energy for the negatively charged excitons is enhanced strongly, because of the mismatch of the electron and the hole wave functions. The resulting biexciton binding energy reproduces experimental results quite well.

Variational Calculations of Donor Binding Energy in Rectangular Wurtzite Aluminium Gallium Nitride / Gallium Nitride Quantum Wires

2007 ◽  
Vol 1040 ◽  
Author(s):  
Choudhury Jayant Praharaj
Keyword(s):  
Gallium Nitride ◽  
Binding Energy ◽  
Electric Fields ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Potential Profile ◽  
Nitride Semiconductors ◽  
Aluminium Gallium Nitride ◽  
Donor Binding Energy ◽  
Variational Calculations

AbstractWe present variational calculations of donor binding energy in rectangular wurtzite aluminium gallium nitride / gallium nitride quantum wires. We explicitly take into account the effect of spontaneous and piezoelectric polarization on the energy levels of donors in quantum wires. Wurtzite structure nitride semiconductors have spontaneous polarization even in the absence of externally applied electric fields. They also have large piezoelectric polarization when grown as pseudomorphic layers. The magnitude of both polarization components is of the order of 1013 electrons per cm2, and has a non-trivial effect on the potential profile seen by electrons. Due to the large built-in electric fields resulting from the polarization discontinuities at heterojunctions, the binding energies of donors is a strong function of the position inside the quantum wire. The potential profile in the 0001 direction can vary by as much as 1.5eV due to polarization effects for vertical dimensions of the quantum wire up to 20 angstroms. The probability density of electrons tends to concentrate near the minimum of the conduction band profile in the 0001 direction. Donors located close to this minimum tend to have a larger concentration of electron density compared to those located closer to the maximum. As a consequence, the binding energy of the former are higher compared to the latter. We use Lorentzian variational wavefunctions to calculate the binding energy as a function of donor position. The confinement potential enhances the binding by a factor of about 3 compared to donors in bulk nitride semiconductors, from about 30 meV to about 90 meV. The variation of binding energy with position is calculated to be more than 50% for typical compositions of the quantum wire regions. Our calculations will be useful for understanding device applications involving n-type doped nitride semiconductor quantum wires.

PHONON CONFINEMENT EFFECT ON THE BINDING ENERGY OF A HYDROGENIC IMPURITY IN QUANTUM WIRES IN THE ELECTRIC AND MAGNETIC FIELDS

2012 ◽  
Vol 15 ◽  
pp. 184-190
Author(s):  
ABBAS SHAHBANDARI
Keyword(s):  
Binding Energy ◽  
Magnetic Fields ◽  
Quantum Wires ◽  
Polar Optical Phonon ◽  
Phonon Confinement ◽  
Hydrogenic Impurity ◽  
Bound Polaron ◽  
Electric And Magnetic Fields ◽  
Applied Fields ◽  
Variation Technique

The effect of phonon confinement on ground state binding energy of bound polaron in polar quantum wires with a finite confining potential investigated by Landau-Pekar variation technique. The effect of external electric and magnetic fields is taken into account as well. The obtained results show that the polar optical phonon confinement leads to a considerable enhancement of the polaron effect and these corrections increase with increasing of applied fields.

Size effect on exciton-phonon scattering in quantum wires

1996 ◽  
Vol 53 (23) ◽  
pp. 15459-15461 ◽  
Author(s):  
Shi-Dong Liang ◽  
C. Y. Chen ◽  
S. C. Jiang ◽  
D. L. Lin
Keyword(s):  
Size Effect ◽  
Phonon Scattering ◽  
Quantum Wires

Polaron effects on the impurity binding energy in quantum wires

1995 ◽  
Vol 52 (7) ◽  
pp. 4662-4665 ◽  
Author(s):  
Francisco A. P. Osório ◽  
Marcos H. Degani ◽  
Oscar Hipólito
Keyword(s):  
Binding Energy ◽  
Quantum Wires
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