Electronic structure and physical properties of early transition metal mononitrides: Density-functional theory LDA, GGA, and screened-exchange LDA FLAPW calculations

2001 ◽  
Vol 63 (15) ◽  
Author(s):  
C. Stampfl ◽  
W. Mannstadt ◽  
R. Asahi ◽  
A. J. Freeman
Keyword(s):  
Density Functional Theory ◽  
Electronic Structure ◽  
Transition Metal ◽  
Physical Properties ◽  
Density Functional ◽  
Functional Theory ◽  
Early Transition Metal ◽  
Screened Exchange ◽  
Early Transition

scholarly journals 312 MAX Phases: Elastic Properties and Lithiation

Materials ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4098 ◽  
Author(s):  
P.P. Filippatos ◽  
M.A. Hadi ◽  
S.-R.G. Christopoulos ◽  
A. Kordatos ◽  
N. Kelaidis ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Transition Metal ◽  
Elastic Properties ◽  
Density Functional ◽  
Max Phases ◽  
Functional Theory ◽  
Group 13 ◽  
Early Transition Metal ◽  
The Density Functional Theory ◽  
Early Transition

Interest in the Mn+1AXn phases (M = early transition metal; A = group 13–16 elements, and X = C or N) is driven by their ceramic and metallic properties, which make them attractive candidates for numerous applications. In the present study, we use the density functional theory to calculate the elastic properties and the incorporation of lithium atoms in the 312 MAX phases. It is shown that the energy to incorporate one Li atom in Mo3SiC2, Hf3AlC2, Zr3AlC2, and Zr3SiC2 is particularly low, and thus, theoretically, these materials should be considered for battery applications.

Transition-metal doping induces the transition of electronic and magnetic properties in armchair MoS2 nanoribbons

2017 ◽  
Vol 19 (36) ◽  
pp. 24594-24604 ◽  
Author(s):  
Jing Pan ◽  
Rui Wang ◽  
Xiaoyu Zhou ◽  
Jiansheng Zhong ◽  
Xiaoyong Xu ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Magnetic Properties ◽  
Electronic Structure ◽  
Transition Metal ◽  
Density Functional ◽  
Transition Metal Doping ◽  
Hydrogen Passivation ◽  
Metal Doping ◽  
Functional Theory ◽  
Electronic And Magnetic Properties

The electronic structure, magnetic properties and stability of transition-metal (TM) doped armchair MoS2 nanoribbons (AMoS2NRs) with full hydrogen passivation have been investigated using density functional theory.

scholarly journals A High-Throughput Study of the Electronic Structure and Physical Properties of Short-Period (GaAs)m(AlAs)n (m, n ≤ 10) Superlattices Based on Density Functional Theory Calculations

Nanomaterials ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 709 ◽  
Author(s):  
Qing-Lu Liu ◽  
Zong-Yan Zhao ◽  
Jian-Hong Yi ◽  
Zi-Yang Zhang
Keyword(s):  
Density Functional Theory ◽  
Electronic Structure ◽  
Physical Properties ◽  
Band Gap ◽  
High Throughput ◽  
Density Functional ◽  
Functional Materials ◽  
Density Functional Theory Calculations ◽  
Functional Theory ◽  
High Throughput Study

As important functional materials, the electronic structure and physical properties of (GaAs)m(AlAs)n superlattices (SLs) have been extensively studied. However, due to limitations of computational methods and computational resources, it is sometimes difficult to thoroughly understand how and why the modification of their structural parameters affects their electronic structure and physical properties. In this article, a high-throughput study based on density functional theory calculations has been carried out to obtain detailed information and to further provide the underlying intrinsic mechanisms. The band gap variations of (GaAs)m(AlAs)n superlattices have been systematically investigated and summarized. They are very consistent with the available reported experimental measurements. Furthermore, the direct-to-indirect-gap transition of (GaAs)m(AlAs)n superlattices has been predicted and explained. For certain thicknesses of the GaAs well (m), the band gap value of (GaAs)m(AlAs)n SLs exponentially increases (increasing n), while for certain thicknesses of the AlAs barrier (n), the band gap value of (GaAs)m(AlAs)n SLs exponentially decreases (increasing m). In both cases, the band gap values converge to certain values. Furthermore, owing to the energy eigenvalues at different k-points showing different variation trends, (GaAs)m(AlAs)n SLs transform from a Γ-Γ direct band gap to Γ-M indirect band gap when the AlAs barrier is thick enough. The intrinsic reason for these variations is that the contributions and positions of the electronic states of the GaAs well and the AlAs barrier change under altered thickness conditions. Moreover, we have found that the binding energy can be used as a detector to estimate the band gap value in the design of (GaAs)m(AlAs)n devices. Our findings are useful for the design of novel (GaAs)m(AlAs)n superlattices-based optoelectronic devices.

Steady semiconducting properties of monolayer PtSe2 with non-metal atom and transition metal atom doping

2020 ◽  
Vol 22 (10) ◽  
pp. 5765-5773 ◽  
Author(s):  
Xu Zhao ◽  
Ranzhuo Huang ◽  
Tianxing Wang ◽  
Xianqi Dai ◽  
Shuyi Wei ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Magnetic Properties ◽  
Electronic Structure ◽  
Transition Metal ◽  
Metal Atom ◽  
Density Functional ◽  
Transition Metal Atom ◽  
Functional Theory ◽  
Semiconducting Properties

Based on density functional theory, the electronic structure and magnetic properties of monolayer PtSe2 doped with different atoms were studied.

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