High-field and high-frequency ESR study of the Haldane state formed in the ferromagnetic and antiferromagnetic alternating Heisenberg chain system(CH3)2CHNH3CuCl3

2001 ◽  
Vol 63 (14) ◽  
Author(s):  
H. Manaka ◽  
I. Yamada ◽  
M. Hagiwara ◽  
M. Tokunaga
Keyword(s):  
High Frequency ◽  
High Field ◽  
Heisenberg Chain ◽  
Chain System

High-field ESR measurements of a bond alternating Heisenberg chain system Ni2(μ-N3)3(dpt)2(ClO4)

2001 ◽  
Vol 294-295 ◽  
pp. 55-59 ◽  
Author(s):  
H. Ohta ◽  
S. Okubo ◽  
S. Kimura ◽  
S. Takeda ◽  
H. Kikuchi ◽  
...  
Keyword(s):  
High Field ◽  
Heisenberg Chain ◽  
Chain System ◽  
High Field Esr

The high field, high frequency permeability of narrow, thin-film magnetic stripes

1991 ◽  
Vol 27 (6) ◽  
pp. 4876-4878 ◽  
Author(s):  
B.C. Webb ◽  
M.E. Re ◽  
C.V. Jahnes ◽  
M.A. Russak
Keyword(s):  
Thin Film ◽  
High Frequency ◽  
High Field

High-field/high-frequency EPR spectrometer operating in pulsed and continuous-wave mode at 180 GHz

2001 ◽  
Vol 21 (3-4) ◽  
pp. 257-274 ◽  
Author(s):  
M. Rohrer ◽  
O. Brügmann ◽  
B. Kinzer ◽  
T. F. Prisner
Keyword(s):  
High Frequency ◽  
High Field ◽  
Continuous Wave ◽  
Wave Mode ◽  
Continuous Wave Mode

Shallow P+-N Junction Fabrication by Plasma Immersion Ion Implantation

1991 ◽  
Vol 223 ◽  
Author(s):  
C. A. Pico ◽  
X. Y. Qian ◽  
E. Jones ◽  
M. A. Lieberman ◽  
N. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Ideality Factor ◽  
High Frequency ◽  
Cyclotron Resonance ◽  
High Field ◽  
Electron Cyclotron Resonance ◽  
Forward Bias ◽  
Electron Cyclotron ◽  
Significant Damage ◽  
Plasma Immersion Ion Implantation

ABSTRACTPlasma immersion ion implantation (PIII) has been applied to fabricate shallow p-n junction diodes and MOS test structures. BF3 ions created by an electron cyclotron resonance source were implanted into n-type Si(100) at an accelerating voltage of −2 kv. The implant doses ranged from 4 × 1014/cm2 to 4 × 1015/cm2. In some cases, the top layers of the Si(100) substrates were preamorphized by a 3 × 1015/cm2 to 1016/cm2 implant of SiF4 by PIII at −7.2 kV prior to the BF3 implant. The ideality factor exhibited in both non- and preamorphized samples during forward bias is 1.02 to 1.05. Reverse leakages were measured at 30 nA/cm2 at −5V. High frequency capacitance and high field breakdown measurements of the oxide test structures showed no significant damage to the oxide.

Determination of the g-matrix orientation in flavin radicals by high-field/high-frequency electron-nuclear double resonance

2005 ◽  
Vol 43 (S1) ◽  
pp. S96-S102 ◽  
Author(s):  
Christopher W. M. Kay ◽  
Erik Schleicher ◽  
Kenichi Hitomi ◽  
Takeshi Todo ◽  
Robert Bittl ◽  
...  
Keyword(s):  
High Frequency ◽  
High Field ◽  
Double Resonance ◽  
Electron Nuclear Double Resonance ◽  
Matrix Orientation

scholarly journals Efficient high-frequency body coil for high-field MRI

2004 ◽  
Vol 52 (4) ◽  
pp. 851-859 ◽  
Author(s):  
J.T. Vaughan ◽  
G. Adriany ◽  
C.J. Snyder ◽  
J. Tian ◽  
T. Thiel ◽  
...  
Keyword(s):  
High Frequency ◽  
High Field ◽  
High Field Mri ◽  
Body Coil
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