scholarly journals Formation of two-dimensional weak localization in conducting Langmuir-Blodgett films

2001 ◽  
Vol 63 (13) ◽  
Author(s):  
Yasuo Ishizaki ◽  
Mitsuru Izumi ◽  
Hitoshi Ohnuki ◽  
Krystyna Kalita-Lipinska ◽  
Tatsuro Imakubo ◽  
...  
Keyword(s):  
Weak Localization ◽  
Two Dimensional ◽  
Langmuir Blodgett ◽  
Langmuir Blodgett Films

scholarly journals Metallic Conduction and Carrier Localization in Two-Dimensional BEDO-TTF Charge-Transfer Solid Crystals

Crystals ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 23
Author(s):  
Hiroshi Ito ◽  
Motoki Matsuno ◽  
Seiu Katagiri ◽  
Shinji K. Yoshina ◽  
Taishi Takenobu ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Low Temperatures ◽  
Weak Localization ◽  
Metallic State ◽  
Two Dimensional ◽  
Carrier Localization ◽  
Langmuir Blodgett ◽  
Charge Transfer Salts ◽  
Langmuir Blodgett Films ◽  
Magnetic Ions

Charge-transfer salts based on bis(ethylenedioxy)tetrathiafulvalene (BEDO-TTF or BO for short) provide a stable two-dimensional (2D) metallic state, while the electrical resistance often shows an upturn at low temperatures below ~10 K. Such 2D weak carrier localization was first recognized for BO salts in the Langmuir–Blodgett films fabricated with fatty acids; however, it has not been characterized in charge-transfer solid crystals. In this paper, we discuss the carrier localization of two crystalline BO charge-transfer salts with or without magnetic ions at low temperatures through the analysis of the weak negative magnetoresistance. The phase coherence lengths deduced with temperature dependence are largely dominated by the electron–electron scattering mechanism. These results indicate that the resistivity upturn at low temperatures is caused by the 2D weak localization. Disorders causing elastic scattering within the metallic domains, such as those of terminal ethylene groups, should be suppressed to prevent the localization.

Two-dimensional ferroelectricity and phase transitions in PVDF Langmuir-Blodgett films probed by second harmonic generation

2001 ◽  
Vol 35 (1-4) ◽  
pp. 23-29 ◽  
Author(s):  
O. A. Aktsipetrov ◽  
T. V. Misuryaev ◽  
T. V. Murzina ◽  
S. P. Palto ◽  
N. N. Petukhova ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Two Dimensional ◽  
Langmuir Blodgett ◽  
Langmuir Blodgett Films

Two-dimensional magnetism in Langmuir-Blodgett films

1983 ◽  
Vol 99 (1-3) ◽  
pp. 263-264 ◽  
Author(s):  
I.A. Asaolu ◽  
B.H. Blott ◽  
W.I. Khan ◽  
D. Melville
Keyword(s):  
Two Dimensional ◽  
Langmuir Blodgett ◽  
Langmuir Blodgett Films

Preparation and Characterization of Two-Dimensional Cross-Linked Monolayers and Langmuir-Blodgett Films of Oligo(dimethylsiloxane) Copolymer

Langmuir ◽  
1994 ◽  
Vol 10 (9) ◽  
pp. 3207-3212 ◽  
Author(s):  
Masashi Kunitake ◽  
Takayuki Nishi ◽  
Hideyuki Yamamoto ◽  
Kenji Nasu ◽  
Osamu Manabe ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Langmuir Blodgett ◽  
Langmuir Blodgett Films

Formation of Two-Dimensional Electronic System and Weak Localization in Conducting Langmuir-Blodgett Film of BEDO-TTF with Stearic Acid

2000 ◽  
Vol 660 ◽  
Author(s):  
Yasuo Ishizaki ◽  
Makoto Suzuki ◽  
Hitoshi Ohnuki ◽  
Tatsuro Imakubo ◽  
Mitsuru Izumi
Keyword(s):  
Stearic Acid ◽  
Weak Localization ◽  
Electronic System ◽  
Conducting Layer ◽  
Two Dimensional ◽  
Blodgett Film ◽  
Langmuir Blodgett ◽  
Lb Film ◽  
Langmuir Blodgett Film ◽  
First Time

ABSTRACTThe organic highly conducting Langmuir-Blodgett (LB) film formed by a molecular association of BEDO-TTF and stearic acid shows the logarithmic decrease of DC conductivity and negative magnetoresistance at low temperature. These data are interpreted by the weak localization of two-dimensional (2D) electronic system inside the homogeneous conducting layer of BEDO-TTF molecules. The electronic length with phase memory has a mesoscopic scale. Strong evidence of the 2D coherent charge transport in the conducting LB film is provided for the first time.

Sign in / Sign up

Export Citation Format

Share Document