Magnetic and electrical properties of Co/Si multilayer thin films

2000 ◽  
Vol 62 (14) ◽  
pp. 9566-9574 ◽  
Author(s):  
P. J. Grundy ◽  
J. M. Fallon ◽  
H. J. Blythe
2021 ◽  
Vol 8 ◽  
Author(s):  
Jinyu Ruan ◽  
Chao Yin ◽  
Tiandong Zhang ◽  
Hao Pan

Ferroelectric multilayer films attract great attention for a wide variation of applications. The synergistic effect by combining different functional layers induces distinctive electrical properties. In this study, ferroelectric BaZr0.2Ti0.8O3/PbZr0.52Ti0.48O3/BaZr0.2Ti0.8O3 (BZT/PZT/BZT) multilayer thin films are designed and fabricated by using the magnetron sputtering method, and a LaNiO3 (LNO) seed layer is introduced. The microstructures and electrical properties of the BZT/PZT/BZT films with and without the LNO seed layer are systematically studied. The results show that the BZT/PZT/BZT/LNO thin film exhibits much lower surface roughness and a preferred (100)-orientation growth, with the growth template and tensile stress provided by the LNO layer. Moreover, an enhanced dielectric constant, decreased dielectric loss, and improved ferroelectric properties are achieved in BZT/PZT/BZT/LNO thin films. This work reveals that the seed layer can play an important role in improving the microstructure and properties of ferroelectric multilayer films.


2014 ◽  
Vol 292 ◽  
pp. 773-776 ◽  
Author(s):  
Chang-Feng Yu ◽  
Shih-Jye Sun ◽  
Jian-Ming Chen

2018 ◽  
Vol 123 (11) ◽  
pp. 113901 ◽  
Author(s):  
Alessia Niesen ◽  
Niclas Teichert ◽  
Tristan Matalla-Wagner ◽  
Jan Balluf ◽  
Niklas Dohmeier ◽  
...  

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