Characterization of heavily Cu-dopedLa2CuO4+δby transmission electron microscopy and electron energy loss spectroscopy

2000 ◽  
Vol 62 (9) ◽  
pp. 5413-5426 ◽  
Author(s):  
Min Gao ◽  
L.-M. Peng ◽  
X. L. Dong ◽  
B. R. Zhao ◽  
G. D. Liu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Transmission Electron ◽  
Electron Energy Loss

Application of high-resolution transmission electron microscopy and electron energy-loss spectroscopy in the characterization of polymer nanotubes

e-Polymers ◽  
2013 ◽  
Vol 13 (1) ◽  
Author(s):  
Lei Shang ◽  
Xiaoru Li ◽  
Yiqian Wang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Transmission Electron ◽  
Electron Energy Loss ◽  
Polymer Nanotubes

Abstract Polyamide 6 (PA6) and polystyrene (PS) nanotubes were successfully fabricated by polymer solution-wetting method. High-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD) and electron energy-loss spectroscopy (EELS) techniques were employed to investigate their crystallization phenomena. It has been found in HRTEM images that the crystalline lattice fringes are observed in some regions of the nanotube walls. XRD analysis showed that these two kinds of polymer nanotubes have a higher degree of crystallinity than that of the bulk materials. PA6 nanotubes dominate in γ phase while bulk PA6 present mainly in α phase. EELS has been used to determine the ratio of C=C and C-C in PS nanotubes, and our result is consistent with the theoretical calculation. HRTEM and EELS will shed light on the microstructural characterization of polymer nanotubes.

Investigation of Switching Mechanism in HfO2-Based Oxide Resistive Memories by In-Situ Transmission Electron Microscopy and Electron Energy Loss Spectroscopy

2017 ◽  
Author(s):  
T. Dewolf ◽  
D. Cooper ◽  
N. Bernier ◽  
V. Delaye ◽  
A. Grenier ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Hafnium Dioxide ◽  
Switching Mechanism ◽  
Transmission Electron ◽  
Electron Energy Loss

Abstract Forming and breaking a nanometer-sized conductive area are commonly accepted as the physical phenomenon involved in the switching mechanism of oxide resistive random access memories (OxRRAM). This study investigates a state-of-the-art OxRRAM device by in-situ transmission electron microscopy (TEM). Combining high spatial resolution obtained with a very small probe scanned over the area of interest of the sample and chemical analyses with electron energy loss spectroscopy, the local chemical state of the device can be compared before and after applying an electrical bias. This in-situ approach allows simultaneous TEM observation and memory cell operation. After the in-situ forming, a filamentary migration of titanium within the dielectric hafnium dioxide layer has been evidenced. This migration may be at the origin of the conductive path responsible for the low and high resistive states of the memory.

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