Simulation of thermoelectric properties of bismuth telluride single crystalline films grown on Si andSiO2surfaces

2000 ◽  
Vol 62 (24) ◽  
pp. 17108-17114 ◽  
Author(s):  
H. Kaddouri ◽  
S. Bénet ◽  
S. Charar ◽  
M. Makowaska-Janusik ◽  
J. C. Tedenac ◽  
...  
Crystals ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 189 ◽  
Author(s):  
Sandra Witkiewicz-Lukaszek ◽  
Anna Mrozik ◽  
Vitalii Gorbenko ◽  
Tetiana Zorenko ◽  
Pawel Bilski ◽  
...  

This work is dedicated to the development of new types of composite thermoluminescent (TL) detectors for simultaneous registration of the different components of ionization radiation based on the single crystalline films (SCFs) of Ce3+-doped Lu3−xGdxAl5O12:Ce (x = 0–1.5) garnet and Y3Al5O12:Ce (YAG:Ce) substrates using the liquid phase epitaxy (LPE) growth method. For this purpose, the TL properties of the mentioned epitaxial structures were examined in Risø TL/OSL-DA-20 reader under excitation by α- and β-particles from 242Am and 90Sr-90Y sources. We have shown that the cation engineering of SCF content can result in more significant separation of the TL glow curves of SCFs and substrates under α- and β-particle excitations in comparison with the prototype of such composite detectors based on the Lu3Al5O12:Ce (LuAG:Ce)/YAG:Ce epitaxial structure. Specifically, the difference between the TL glow curves of Lu1.5Gd1.5Al5O12:Ce SCFs and YAG:Ce substrates increases up to 120 K in comparison with a respective value of 80 degrees in the prototype based on the LuAG:Ce/YAG:Ce epitaxial structure. Therefore, the LPE-grown epitaxial structures containing Lu1.5Gd1.5Al5O12:Ce SCFs and Ce3+-doped YAG:Ce substrate can be successfully applied for simultaneous registration of α- and β-particles in mixed fluxes of ionization radiation.


2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.


CrystEngComm ◽  
2014 ◽  
Vol 16 (34) ◽  
pp. 7956-7962 ◽  
Author(s):  
P. Anandan ◽  
M. Omprakash ◽  
M. Azhagurajan ◽  
M. Arivanandhan ◽  
D. Rajan Babu ◽  
...  

The size and phase of bismuth telluride nanocrystals were tailored using a sintering process, to enhance their thermoelectric properties.


Author(s):  
Issei Suzuki ◽  
Zexin Lin ◽  
Sakiko Kawanishi ◽  
Kiyohisa Tanaka ◽  
Yoshitaro Nose ◽  
...  

Valence band dispersions of single-crystalline SnS1-xSex solid solutions were observed by angle-resolved photoemission spectroscopy (ARPES). The hole effective masses, crucial factors in determining thermoelectric properties, were directly evaluated. They decrease...


2009 ◽  
Vol 206 (11) ◽  
pp. 2586-2592 ◽  
Author(s):  
Y. Zorenko ◽  
M. Nikl ◽  
J. A. Mares ◽  
V. Gorbenko ◽  
V. Savchyn ◽  
...  

RSC Advances ◽  
2017 ◽  
Vol 7 (41) ◽  
pp. 25298-25304 ◽  
Author(s):  
Haidong Wang ◽  
Dingshan Zheng ◽  
Xing Zhang ◽  
Hiroshi Takamatsu ◽  
Weida Hu

A precision H-type sensor method has been developed to measure the thermoelectric performance of individual single-crystalline CdS nanowires for the first time.


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