Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb andGa1−xInxAsySb1−y/GaSb(0.07<~x<~0.22,0.05<~y<~0.19)quaternary alloys using infrared photoreflectance

2000 ◽  
Vol 62 (24) ◽  
pp. 16600-16604 ◽  
Author(s):  
Martín Muñoz ◽  
Fred H. Pollak ◽  
M. B. Zakia ◽  
N. B. Patel ◽  
J. L. Herrera-Pérez
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Quaternary Alloys ◽  
Fundamental Band

Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO

2007 ◽  
Author(s):  
R. Schmidt-Grund ◽  
N. Ashkenov ◽  
M. M. Schubert ◽  
W. Czakai ◽  
D. Faltermeier ◽  
...  
Keyword(s):  
Refractive Index ◽  
Temperature Dependence ◽  
Band Gap ◽  
Optical Transitions ◽  
Fundamental Band

scholarly journals Temperature dependence of the fundamental band gap of InN

2003 ◽  
Vol 94 (7) ◽  
pp. 4457-4460 ◽  
Author(s):  
J. Wu ◽  
W. Walukiewicz ◽  
W. Shan ◽  
K. M. Yu ◽  
J. W. Ager ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Fundamental Band

Temperature Dependence Of The Fundamental Band Gap In Hexagonal GaN

1997 ◽  
Vol 482 ◽  
Author(s):  
H. Herr ◽  
V. Alex ◽  
J. Weber
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Line Shape ◽  
Free Exciton ◽  
Band Gap Energy ◽  
Recombination Process ◽  
Photoluminescence Spectra ◽  
High Quality ◽  
Fundamental Band ◽  
Gap Energy

AbstractPhotoluminescence spectra of hexagonal GaN were measured in the temperature range T= 2 – 1200 K. We identify the Free Exciton (FX) as the dominant recombination process in our high quality samples for temperatures above 200 K. From the line shape fit of the FX we determine the excitonic band gap shift with temperature. An analysis according to the empirical Varshni equation gives Eg (T)-Eg(0 K) = (-α T2)/(T + β), with α = (7.3 ± 0.3)·10−4 eV/K and β = (594 ± 54) K. We have detected significant differences in the band gap energy at low and higher temperatures for GaN layers grown on different substrate materials. Heating GaN above 1200 K leads to irreversible changes in the near band gap photoluminescence spectra.

On the nature and temperature dependence of the fundamental band gap of In2O3

2013 ◽  
Vol 211 (1) ◽  
pp. 54-58 ◽  
Author(s):  
K. Irmscher ◽  
M. Naumann ◽  
M. Pietsch ◽  
Z. Galazka ◽  
R. Uecker ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Fundamental Band

Temperature dependence of the fundamental band gap energy of Cd1−xCoxTe single crystals

1998 ◽  
Vol 109 (4) ◽  
pp. 235-237 ◽  
Author(s):  
Hyekyeong Kim ◽  
Gwangsoo Jeen ◽  
Seongtae Park ◽  
Young-Hun Hwang ◽  
Young-Ho Um ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Single Crystals ◽  
Band Gap Energy ◽  
Fundamental Band ◽  
Gap Energy

scholarly journals Contactless Electroreflectance Study of Temperature Dependence of Fundamental Band Gap of ZnSe

1995 ◽  
Vol 88 (5) ◽  
pp. 1013-1017 ◽  
Author(s):  
W. Krystek ◽  
L. Malikova ◽  
F.H. Pollak ◽  
M.C. Tamargo ◽  
N. Dai ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Fundamental Band

A novel theoretical model for the temperature dependence of band gap energy in semiconductors

2017 ◽  
Vol 50 (40) ◽  
pp. 40LT02 ◽  
Author(s):  
Peiji Geng ◽  
Weiguo Li ◽  
Xianhe Zhang ◽  
Xuyao Zhang ◽  
Yong Deng ◽  
...  
Keyword(s):  
Theoretical Model ◽  
Temperature Dependence ◽  
Band Gap ◽  
Band Gap Energy ◽  
Gap Energy

The composition and temperature dependences of the fundamental band gap in ZnSxSe1−x alloys

1979 ◽  
Vol 86 ◽  
pp. 378-383 ◽  
Author(s):  
L. Soonckindt ◽  
D. Etienne ◽  
J.P. Marchand ◽  
L. Lassabatere
Keyword(s):  
Band Gap ◽  
Fundamental Band ◽  
Temperature Dependences
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