scholarly journals Behavior of the thermopower in amorphous materials at the metal-insulator transition

2000 ◽  
Vol 62 (24) ◽  
pp. 16446-16452 ◽  
Author(s):  
C. Villagonzalo ◽  
R. A. Römer ◽  
M. Schreiber ◽  
A. MacKinnon
1997 ◽  
Vol 3 (S2) ◽  
pp. 719-720
Author(s):  
N. Tanaka ◽  
S.J. Penny cook ◽  
T. Fujiwara ◽  
T. Fukunaga ◽  
U. Mizutani

A combination of Si and transition metal element like V, Ni and Au can form an amorphous phase over a wide composition range. Extensive studies have been reported in relation to a change in the electron transport properties across the metal-insulator transition. It has been reported that the metal-insulator transition in the amorphous Si100−xVx alloys accompanies a substantial change in both the electronic structure and atomic structure around x=18, as revealed by the photoemission spectroscopy and neutron diffraction experiments[1]. It is of great interest to examine the structural change associated with the metal-insulator transition at an atomic level by utilizing the HRTEM[2]. However, the correspondence between the image contrast and projection of atomic structures in amorphous materials is usually indirect due to the well-known phenomena of phase contrast in HRTEM. High-angle detection annular dark field scanning transmission electron microscopy (HAADF-STEM) as illustrated in Fig.1 is a solution of the problem without contrast reversal due to the lens-defocus and thickness-variation of samples.


2004 ◽  
Vol 114 ◽  
pp. 277-281 ◽  
Author(s):  
J. Wosnitza ◽  
J. Hagel ◽  
O. Stockert ◽  
C. Pfleiderer ◽  
J. A. Schlueter ◽  
...  

2018 ◽  
Vol 2 (8) ◽  
Author(s):  
Yoshiko Nanao ◽  
Yoshiharu Krockenberger ◽  
Ai Ikeda ◽  
Yoshitaka Taniyasu ◽  
Michio Naito ◽  
...  

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