Structural and optical analysis ofβ−FeSi2thin layers prepared by ion-beam synthesis and solid-state reaction

2000 ◽  
Vol 62 (19) ◽  
pp. 13057-13063 ◽  
Author(s):  
V. Darakchieva ◽  
M. Baleva ◽  
M. Surtchev ◽  
E. Goranova
2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Jian Hui ◽  
Haiqian Ma ◽  
Zheyu Wu ◽  
Zhan Zhang ◽  
Yang Ren ◽  
...  

AbstractA high-throughput investigation of metallic glass formation via solid-state reaction was reported in this paper. Combinatorial multilayered thin-film chips covering the entire Ti–Ni–Cu ternary system were prepared using ion beam sputtering technique. Microbeam synchrotron X-ray diffraction (XRD) and X-ray fluorescence (XRF) measurements were conducted, with 1,325 data points collected from each chip, to map out the composition and the phase constitution before and after annealing at 373 K for 110 hours. The composition dependence of the crystal-to-glass transition by solid-state reaction was surveyed using this approach. The resulting composition–phase map is consistent with previously reported results. Time-of-flight secondary ion mass spectroscopy (ToF-SIMS) was performed on the representative compositions to determine the inter-diffusion between layers, the result shows that the diffusion of Ti is the key factor for the crystal-to-glass transition. In addition, both layer thickness and layer sequence play important roles as well. This work demonstrates that combinatorial chip technique is an efficient way for systematic and rapid study of crystal-to-glass transition for multi-component alloy systems.


1993 ◽  
Vol 74 (7) ◽  
pp. 4363-4370 ◽  
Author(s):  
M. Kopcewicz ◽  
D. L. Williamson

1996 ◽  
Vol 439 ◽  
Author(s):  
A. Paesano ◽  
A. T. Motta ◽  
R. C. Birtcher ◽  
E. A. Ryan ◽  
S. R. Teixeira ◽  
...  

AbstractVapor-deposited Zr-Fe multilayered thin films with various wavelengths and of overall composition either 50% Fe or Fe-rich up to 57 % Fe were either irradiated with 300 keV Kr ions at temperatures from 25K to 623 K to fluences up to 2 × 1016 cm−2, or simply annealed at 773K in-situ in the Intermediate Voltage Electron Microscope at Argonne National Laboratory. Under irradiation, the final reaction product is the amorphous phase in all cases studied, but the dose to amorphization depends on the temperature and on the wavelength. In the purely thermal case (annealing at 773 K), the 50–50 composition produces the amorphous phase but for the Fe-rich multilayers the reaction products depend on the multilayer wavelength. For small wavelength, the amorphous phase is still formed, but at large wavelength the Zr-Fe crystalline intermetallic compounds appear. These results are discussed in terms of existing models of irradiation kinetics and phase selection during solid state reaction.


1997 ◽  
Author(s):  
A. Jr. Paesano ◽  
A.T. Motta ◽  
R.C. Birtcher ◽  
E.A. Ryan ◽  
S.R. Teixeira ◽  
...  

1990 ◽  
Vol 39 (7) ◽  
pp. 101
Author(s):  
LIU WEN-HONG ◽  
ZHU DE-ZHANG ◽  
WANG ZHEN-XIA ◽  
LIU XIANG-HUAI

Author(s):  
S.R. Summerfelt ◽  
C.B. Carter

The wustite-spinel interface can be viewed as a model interface because the wustite and spinel can share a common f.c.c. oxygen sublattice such that only the cations distribution changes on crossing the interface. In this study, the interface has been formed by a solid state reaction involving either external or internal oxidation. In systems with very small lattice misfit, very large particles (>lμm) with coherent interfaces have been observed. Previously, the wustite-spinel interface had been observed to facet on {111} planes for MgFe2C4 and along {100} planes for MgAl2C4 and MgCr2O4, the spinel then grows preferentially in the <001> direction. Reasons for these experimental observations have been discussed by Henriksen and Kingery by considering the strain energy. The point-defect chemistry of such solid state reactions has been examined by Schmalzried. Although MgO has been the principal matrix material examined, others such as NiO have also been studied.


Author(s):  
J. R. Heffelfinger ◽  
C. B. Carter

Transmission-electron microscopy (TEM), scanning-electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDS) were used to investigate the solid-state reaction between a thin yttria film and a (0001) α-alumina substrate. Systems containing Y2O3 (yttria) and Al2O3 (alumina) are seen in many technologically relevant applications. For example, yttria is being explored as a coating material for alumina fibers for metal-ceramic composites. The coating serves as a diffusion barrier and protects the alumina fiber from reacting with the metal matrix. With sufficient time and temperature, yttria in contact with alumina will react to form one or a combination of phases shown by the phase diagram in Figure l. Of the reaction phases, yttrium aluminum garnet (YAG) is used as a material for lasers and other optical applications. In a different application, YAG is formed as a secondary phase in the sintering of AIN. Yttria is added to AIN as a sintering aid and acts as an oxygen getter by reacting with the alumina in AIN to form YAG.


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