Tungsten in silicon carbide: Band-gap states and their polytype dependence

2000 ◽  
Vol 62 (19) ◽  
pp. 12888-12895 ◽  
Author(s):  
N. Achtziger ◽  
G. Pasold ◽  
R. Sielemann ◽  
C. Hülsen ◽  
J. Grillenberger ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Gap States

Band gap states of V and Cr in 6H-silicon carbide

1997 ◽  
Vol 65 (3) ◽  
pp. 329-331 ◽  
Author(s):  
N. Achtziger ◽  
J. Grillenberger ◽  
W. Witthuhn
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Gap States

Erbium-related band gap states in 4H– and 6H–silicon carbide

2003 ◽  
Vol 93 (4) ◽  
pp. 2289-2291 ◽  
Author(s):  
G. Pasold ◽  
F. Albrecht ◽  
J. Grillenberger ◽  
U. Grossner ◽  
C. Hülsen ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Gap States

Band gap states of Ti, V, and Cr in 4H–silicon carbide

1997 ◽  
Vol 71 (1) ◽  
pp. 110-112 ◽  
Author(s):  
Norbert Achtziger ◽  
Wolfgang Witthuhn
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Gap States

Europium Induced Deep Levels in Hexagonal Silicon Carbide

2006 ◽  
Vol 527-529 ◽  
pp. 659-662
Author(s):  
G. Pasold ◽  
F. Albrecht ◽  
C. Hülsen ◽  
R. Sielemann ◽  
W. Witthuhn
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Deep Level ◽  
Energy Transfer Process ◽  
Energy Levels ◽  
Radioactive Tracer ◽  
Chemical Identification ◽  
Concentration Sensitivity ◽  
Transient Spectroscopy ◽  
Gap States

Silicon carbide (SiC) was investigated for deep band gap states of europium by means of deep level transient spectroscopy (DLTS). The knowledge of the properties of optoelectrically active impurities or defects is essential for a detailed understanding of the energy-transfer process resulting in the observable excitations [1]. SiC-samples of the polytypes 4H as well as 6H are ion-implanted by different europium- isotopes in order to obtain a chemical identification of the characterized energy levels. Here the concentration sensitivity of the DLTS is applied to observe the elemental transmutation of the incorporated radioactive tracer atoms 146Eu (t1/2=4.51 d) and 147Eu (t1/2=24.6 d). DLTS on samples implanted with stable Eu-ions (153Eu) was carried out for comparison and manifestation of the results. From these studies 5 Eu-related deep band gap levels are established: in 4H-SiC two levels at EV+0.86(2) eV and EC−0.47(2) eV, and in 6H-SiC three levels at EV+0.88(2) eV, EC−0.29(2) eV and EC−0.67(2) eV.

High Temperature Silicon Carbide CMOS Integrated Circuits

2011 ◽  
Vol 679-680 ◽  
pp. 726-729 ◽  
Author(s):  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
Dave A. Smith ◽  
Robin. F. Thompson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Band Gap ◽  
High Temperatures ◽  
Wide Band ◽  
Cmos Technology ◽  
Cmos Integrated Circuits ◽  
Wide Band Gap ◽  
Circuit Performance

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.

Silicon carbide embedded in carbon nanofibres: structure and band gap determination

2014 ◽  
Vol 16 (44) ◽  
pp. 24437-24442 ◽  
Author(s):  
Anja Bonatto Minella ◽  
Darius Pohl ◽  
Christine Täschner ◽  
Rolf Erni ◽  
Raghu Ummethala ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Carbon Nanofibres

The origin and nature of silicon band‐gap states at the Si/SiO2interface

1981 ◽  
Vol 38 (11) ◽  
pp. 884-886 ◽  
Author(s):  
J. Singh ◽  
A. Madhukar
Keyword(s):  
Band Gap ◽  
Gap States
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