Proton-implantation-induced defects inn-type6H- and4H−SiC:An electron paramagnetic resonance study
2000 ◽
Vol 62
(15)
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pp. 10126-10134
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2002 ◽
Vol 186
(1-4)
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pp. 201-205
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2001 ◽
Vol 10
(3-7)
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pp. 993-997
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2008 ◽
Vol 77
(5)
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pp. 545-552
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1992 ◽
Vol 1
(Part_2)
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pp. 89-98
1980 ◽
Vol 255
(17)
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pp. 8116-8120
1966 ◽
Vol 241
(10)
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pp. 2256-2259