Identification of the oxygen-vacancy defect containing a single hydrogen atom in crystalline silicon

2000 ◽  
Vol 61 (7) ◽  
pp. 4659-4666 ◽  
Author(s):  
P. Johannesen ◽  
B. Bech Nielsen ◽  
J. R. Byberg
Keyword(s):  
Hydrogen Atom ◽  
Oxygen Vacancy ◽  
Crystalline Silicon ◽  
Vacancy Defect

F-CENTER IMPACT ON PHOTOELECTROCHEMICAL PROPERTIES IN HEMATITE

2010 ◽  
Vol 24 (18) ◽  
pp. 1963-1970 ◽  
Author(s):  
ARVIDS STASHANS ◽  
RICHARD RIVERA
Keyword(s):  
Experimental Data ◽  
Optical Properties ◽  
Oxygen Vacancy ◽  
Quantum Chemical ◽  
Vacancy Defect ◽  
Chemical Model ◽  
Photoelectrochemical Properties ◽  
Structural And Optical Properties ◽  
F Center ◽  
Quantum Chemical Model

Structural and optical properties of F-center (two electrons trapped by an oxygen vacancy) defect in hematite have been studied using a quantum-chemical model. Calculated absorption energies, 0.9 eV and 3.6 eV, are discussed in terms of the available experimental data. An explanation for the origin of experimentally observed electron depletion in hematite is proposed.

scholarly journals Oxygen Vacancy Induced Magnetism in Anti-Perovskite Topological Dirac Semimetal Ba3SnO

2021 ◽  
Author(s):  
Javaria Batool ◽  
Syed Muhammad Alay-e-Abbas ◽  
Gustav Johansson ◽  
Waqas Zulfiqar ◽  
Muhammad Arsam Danish ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Oxygen Vacancy ◽  
Electronic Properties ◽  
Thermodynamic Stability ◽  
First Principles ◽  
Density Functional ◽  
Density Functional Theory Calculations ◽  
Vacancy Defect ◽  
Functional Theory ◽  
Dirac Semimetal

The thermodynamic, structural, magnetic and electronic properties of pristine and intrinsic vacancy defect containing topological Dirac semimetal Ba3SnO are studied using first-principles density functional theory calculations. The thermodynamic stability of...

Oxygen vacancy defect engineering using atomic layer deposited HfAlOx in multi-layered gate stack

2016 ◽  
Vol 108 (18) ◽  
pp. 183501 ◽  
Author(s):  
M. N. Bhuyian ◽  
R. Sengupta ◽  
P. Vurikiti ◽  
D. Misra
Keyword(s):  
Oxygen Vacancy ◽  
Atomic Layer ◽  
Vacancy Defect ◽  
Defect Engineering ◽  
Gate Stack

The Structure of the Boron-Hydrogen Complex in Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
A. D. Marwick ◽  
G. S. Oehrlein ◽  
J. H. Barrett ◽  
N. M Johnson
Keyword(s):  
Monte Carlo ◽  
Hydrogen Atom ◽  
Monte Carlo Simulations ◽  
Boron Atom ◽  
Small Proportion ◽  
Crystalline Silicon ◽  
Hydrogen Atoms ◽  
Substitutional Site ◽  
Bond Center ◽  
Center Site

ABSTRACTChanneling and lattice location has been used to investigate the structure of the boron-hydrogen complex in crystalline silicon. The positions of both the boron and hydrogen atoms have been determined. The results are compared with Monte-Carlo simulations. The boron atom in the B-H pair is found to be displaced from a substitutional site by 0.28±0.03Å, while the hydrogen atom is predominantly at a bond-center site, with a small proportion in a back-bonded position.

Electron structure of “oxygen vacancy” defect in SiO2

1985 ◽  
Vol 55 (5) ◽  
pp. 495-497 ◽  
Author(s):  
G.B. Cherlov ◽  
S.P. Freidman ◽  
A.F. Zatsepin ◽  
V.S. Kortov ◽  
V.A. Gubanov
Keyword(s):  
Oxygen Vacancy ◽  
Vacancy Defect ◽  
Electron Structure

Optical polarized properties related to the oxygen vacancy defect in the PbWO 4 crystal

2005 ◽  
Vol 14 (6) ◽  
pp. 1142-1146 ◽  
Author(s):  
Liu Ting-Yu ◽  
Zhang Qi-Ren ◽  
Zhuang Song-Lin
Keyword(s):  
Oxygen Vacancy ◽  
Vacancy Defect
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