Energy levels of Ge quantum wells embedded in Si: A tight-binding approach

2000 ◽  
Vol 61 (23) ◽  
pp. 15585-15587 ◽  
Author(s):  
G. Grosso ◽  
G. Pastori Parravicini ◽  
C. Piermarocchi
Keyword(s):  
Quantum Wells ◽  
Energy Levels ◽  
Tight Binding

TIGHT-BINDING METHOD FOR QUANTUM-CONFINEMENT ENERGY CALCULATIONS IN THE CdSe/ZnSe MULTIPLE QUANTUM WELLS

2008 ◽  
Vol 19 (11) ◽  
pp. 1635-1645
Author(s):  
NACIR TIT ◽  
IHAB M. OBAIDAT
Keyword(s):  
Quantum Wells ◽  
Quantum Confinement ◽  
Bound States ◽  
Energy Levels ◽  
Tight Binding ◽  
Relevant Information ◽  
Physical Models ◽  
Multiple Quantum Wells ◽  
Bandgap Energy ◽  
Multiple Quantum

We present an efficient method to calculate the quantum-confinement energy of charge carriers in the ( ZnSe )M( CdSe )N (001) multiple quantum wells (MQW). The method is based on the 3D empirical sp3s* tight-binding models, which include the spin-orbit coupling. The method can handle large systems while it takes account of the band mixing caused by the strain and confinement. In these perspectives, it proves itself more reliable than the traditional effective-mass approach (EMA) by further generating more relevant information about the quantum states localized within the wells; in particular, the number of bound states and their energy levels and their corresponding wavefunctions were obtained based on more realistic physical models. The quantum-confinement energy, bandgap energy, and band structures are studied versus the CdSe well width (N). The results are found to be comparable with those experimentally obtained using photoluminescence.

scholarly journals Tunneling spectroscopy of energy levels in wide quantum wells in tilted magnetic fields

1992 ◽  
Vol 45 (15) ◽  
pp. 8749-8751 ◽  
Author(s):  
C. Kutter ◽  
V. Chitta ◽  
J. C. Maan ◽  
V. I. Fal’ko ◽  
M. L. Leadbeater ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Energy Levels ◽  
Tunneling Spectroscopy

Zero Valley Splitting at Zero Magnetic Field for Strained Si/SiGe Quantum Wells

2007 ◽  
Vol 1017 ◽  
Author(s):  
Seungwon Lee ◽  
Paul von Allmen
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Brillouin Zone ◽  
Tilt Angle ◽  
Tight Binding ◽  
Direct Consequence ◽  
Zero Magnetic Field ◽  
Strained Si ◽  
Valley Splitting

AbstractThe electronic structure for a strained silicon quantum well grown on a tilted SiGe substrate is calculated using an empirical tight-binding method. For a zero substrate tilt angle the two lowest minima of the conduction band define a non-zero valley splitting at the center of the Brillouin zone. A finite tilt angle for the substrate results in displacing the two lowest conduction band minima to finite k0 and -k0 in the Brillouin zone with equal energy. The vanishing of the valley splitting for quantum wells grown on tilted substrates is found to be a direct consequence of the periodicity of the steps at the interfaces between the quantum well and the buffer materials.

A tight-binding study of energy levels of iron in SrTiO3

1984 ◽  
Vol 17 (29) ◽  
pp. 5185-5196 ◽  
Author(s):  
M O Selme ◽  
P Pecheur ◽  
G Toussiant
Keyword(s):  
Energy Levels ◽  
Tight Binding ◽  
Binding Study
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