Multiple peak structure of intersubband absorption in heterostructures with closely spaced levels

1999 ◽  
Vol 60 (11) ◽  
pp. 7776-7779 ◽  
Author(s):  
O. E. Raichev ◽  
F. T. Vasko
Keyword(s):  
Multiple Peak ◽  
Intersubband Absorption ◽  
Peak Structure

Multiple-peak structure in porous Si photoluminescence

2010 ◽  
Vol 107 (12) ◽  
pp. 123520 ◽  
Author(s):  
Yan Kai Xu ◽  
Sadao Adachi
Keyword(s):  
Porous Si ◽  
Multiple Peak ◽  
Peak Structure

High-energy proton drift echoes: Multiple peak structure

1984 ◽  
Vol 89 (A10) ◽  
pp. 9101 ◽  
Author(s):  
R. D. Belian ◽  
D. N. Baker ◽  
E. W. Hones ◽  
P. R. Higbie
Keyword(s):  
High Energy ◽  
High Energy Proton ◽  
Multiple Peak ◽  
Peak Structure ◽  
Energy Proton

A self‐consistent multiple‐peak structure of the photoemission spectra of metallic Fe 2 p as a function of film thickness

2020 ◽  
Vol 52 (9) ◽  
pp. 591-599
Author(s):  
Alberto Herrera‐Gomez ◽  
Orlando Cortazar‐Martínez ◽  
Jesus‐Fernando Fabian‐Jocobi ◽  
Abraham Carmona‐Carmona ◽  
Joaquin‐Gerardo Raboño‐Borbolla ◽  
...  
Keyword(s):  
Film Thickness ◽  
Multiple Peak ◽  
Peak Structure ◽  
Self Consistent

Direct observation of a multiple-peak structure in the Raman spectra of 74Ge and 70Ge nanocrystals

2013 ◽  
Vol 113 (4) ◽  
pp. 044312
Author(s):  
Shai Levy ◽  
Issai Shlimak ◽  
David H. Dressler ◽  
Tiecheng Lu
Keyword(s):  
Raman Spectra ◽  
Direct Observation ◽  
Multiple Peak ◽  
Peak Structure

Multiple peak intersubband absorption in a biased superlattice

2002 ◽  
Vol 66 (7) ◽  
Author(s):  
A. V. Korovin ◽  
O. E. Raichev ◽  
F. T. Vasko
Keyword(s):  
Multiple Peak ◽  
Intersubband Absorption

SUPERLATTICE TUNNELING DETECTORS OPERATING AT λ = 10 µm, BASED ON QUANTUM WELL INTERSUBBAND ABSORPTION

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-611-C5-614
Author(s):  
B. F. LEVINE ◽  
K. K. CHOI ◽  
C. G. BETHEA ◽  
J. WALKER ◽  
R. J. MALIK
Keyword(s):  
Quantum Well ◽  
Intersubband Absorption

scholarly journals Selective Doping of Quantum Dot Nanomaterials for Managing Intersubband Absorption, Dark Current, and Photoelectron Lifetime

MRS Advances ◽  
2017 ◽  
Vol 2 (14) ◽  
pp. 759-766 ◽  
Author(s):  
Kimberly Sablon ◽  
Andrei Sergeev ◽  
Xiang Zhang ◽  
Vladimir Mitin ◽  
Michael Yakimov ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Dark Current ◽  
Spectral Characteristics ◽  
Nonradiative Recombination ◽  
Photovoltaic Devices ◽  
Electron Population ◽  
Selective Doping ◽  
Intersubband Absorption ◽  
Novel Approach ◽  
N Doping

ABSTRACTNovel approach to optimize quantum dot (QD) materials for specific optoelectronic applications is based on engineering of nanoscale potential profile, which is created by charged QDs. The nanoscale barriers prevent capture of photocarriers and drastically increase the photoelectron lifetime, which in turn strongly improves the photoconductive gain, responsivity, and sensitivity of photodetectors and decreases the nonradiative recombination losses of photovoltaic devices. QD charging may be created by various types of selective doping. To investigate effects of selective doping, we model, fabricated, and characterized AlGaAs/InAs QD structures with n-doping of QD layers, doping of interdot layers, and bipolar doping, which combines p-doping of QD layers with strong n-doping of the interdot space. We have measured spectral characteristics of photoresponse, photocurrent and dark current. The experimental data show that providing the same electron population of QDs, the bipolar doping creates the most contrasting nanoscale profile with the highest barriers around dots.

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